Abstract: A flash memory device and method of making the same are disclosed. The flash memory device is located on a substrate and includes a floating gate electrode, a tunnel dielectric layer located between the substrate and the floating gate electrode, a smaller length control gate electrode and a control gate dielectric layer located between the floating gate electrode and the smaller length control gate electrode. The length of a major axis of the smaller length control gate electrode is less than a length of a major axis of the floating gate electrode.

Abstract: A display device and a method for fabricating the same are provided. The device is an active matrix interference modulator (IMOD) display device which includes a thin film transistor and an interference modulator (IMOD). The interference modulator (IMOD) is integrated on the thin film transistor, a first metal layer is simultaneously used as a light-shielding pattern and a gate electrode, and a second metal layer is simultaneously used as a wiring and a source/drain metal layer. Therefore, the fabricating time and cost are saved. In addition, the aperture ratio of the display device is improved because the pixel thin film transistor is not below an optical gap.

Abstract: A system for displaying images includes a multi-gate thin film transistor (TFT) device including an active layer, first and second gate structures, and first and second light-shielding layers. The active layer is disposed on a substrate in a pixel region. The first and second gate structures are disposed on the active layer. The first and second light-shielding layers are disposed between the substrate and the active layer. The active layer includes first and second source/drain regions and first and second channel regions. The first light-shielding layer corresponds to a first lightly doped region and laterally extends under at least a portion of the first channel region. The second light-shielding layer corresponds to the second lightly doped region and laterally extends under at least a portion of the second channel region.

Abstract: An organic light emitting diode (OLED) display and thin film transistor (TFT) manufacturing method thereof are disclosed. According to the present invention, poly-silicon layers for forming active areas of non-driving TFT (e.g. peripheral circuit TFT and switch TFT) and driving TFT used in the OLED display are respectively made by using standard laser crystallization method and non-laser crystallization method or low energy laser crystallization method. Therefore, the peripheral circuit TFT has excellent electrical performance such as high carrier mobility, while the OLED-driving TFT has good stability so that the resultant display can operate with improved luminance uniformity.

Abstract: A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating layer. A first polysilicon active layer is disposed on the first insulating layer and a second polysilicon layer is disposed on a second region of the substrate. A second insulating layer covers both of the first and second polysilicon gate layers. Second and third gate layers are respectively disposed on the second insulating layer above the first and second polysilicon active layers. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.

Abstract: A system for displaying images including a display panel and a fabrication method thereof are provided. The display panel includes a substrate having a first, second and third areas, a first patterned semiconductor layer disposed over the first area of the substrate, a first insulating layer covering the first patterned semiconductor layer and the first, the second and the third areas of the substrate, a second patterned semiconductor layer disposed on the first insulating layer of the first and the third areas respectively, a second insulating layer covering the second patterned semiconductor layer and the first insulating layer, and a patterned conductive layer disposed on the second insulating layer to form a first thin-film transistor at the first area and a second thin-film transistor at the third area.

Abstract: An image display system and manufacturing method are disclosed. According to the present invention, the image display system comprises a substrate, a switching TFT, a driving TFT, a photo sensor and a capacitor. A buffer layer is formed on a substrate. A separation layer is formed in a first area for forming a switching TFT, but no heat sink layer is formed thereon. A heat sink layer is formed on a second area for forming the driving TFT, the photo sensor and the capacitor, and then, the separation layer is formed thereafter. The present invention can form poly silicon layers with different crystal grain sizes on the first area and on the second area in a single laser crystallization process by utilizing the heat sink phenomenon of ELA with or without the heat sink layer. Therefore, the image display system of the present invention can operate with good luminance uniformity.

Abstract: A system for displaying images includes a multi-gate thin film transistor (TFT) device including an active layer, first and second gate structures, and first and second light-shielding layers. The active layer is disposed on a substrate in a pixel region. The first and second gate structures are disposed on the active layer. The first and second light-shielding layers are disposed between the substrate and the active layer. The active layer includes first and second source/drain regions and first and second channel regions. The first light-shielding layer corresponds to a first lightly doped region and laterally extends under at least a portion of the first channel region. The second light-shielding layer corresponds to the second lightly doped region and laterally extends under at least a portion of the second channel region.

Abstract: A system for displaying images. The system includes a thin film transistor (TFT) device including a first gate layer disposed on a first region of a substrate and covered by a first insulating layer. A first polysilicon active layer is disposed on the first insulating layer and a second polysilicon layer is disposed on a second region of the substrate. A second insulating layer covers both of the first and second polysilicon gate layers. Second and third gate layers are respectively disposed on the second insulating layer above the first and second polysilicon active layers. A method for fabricating a system for displaying images including the TFT device is also disclosed.

Abstract: A system for displaying images including a display panel and a fabrication method thereof are provided. The display panel includes a substrate having a first, second and third areas, a first patterned semiconductor layer disposed over the first area of the substrate, a first insulating layer covering the first patterned semiconductor layer and the first, the second and the third areas of the substrate, a second patterned semiconductor layer disposed on the first insulating layer of the first and the third areas respectively, a second insulating layer covering the second patterned semiconductor layer and the first insulating layer, and a patterned conductive layer disposed on the second insulating layer to form a first thin-film transistor at the first area and a second thin-film transistor at the third area.

Abstract: A system for displaying images is provided. The system includes a thin film transistor (TFT) device comprising a substrate having a pixel region, a driving thin film transistor and a switching thin film transistor. The driving thin film transistor and the switching thin film transistor are disposed on the substrate and in the pixel region. The driving thin film transistor includes a polysilicon active layer and the switching thin film transistor includes an amorphous silicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.

Abstract: A system for displaying images. The system includes a thin film transistor (TFT) device including a first insulating layer covering a first region and a second region of a substrate. A first polysilicon active layer is disposed in the first region and between the substrate and the first insulating layer. A second polysilicon active layer is disposed on the first insulating layer in the second region. A polysilicon gate layer is disposed above the first polysilicon active layer. A second insulating layer covers the polysilicon gate layer and the second polysilicon active layer. A metal gate layer is disposed above the second polysilicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed.

Abstract: An image display system and manufacturing method are disclosed. According to the present invention, the image display system comprises a substrate, a switching TFT, a driving TFT, a photo sensor and a capacitor. A buffer layer is formed on a substrate. A separation layer is formed in a first area for forming a switching TFT, but no heat sink layer is formed thereon. A heat sink layer is formed on a second area for forming the driving TFT, the photo sensor and the capacitor, and then, the separation layer is formed thereafter. The present invention can form poly silicon layers with different crystal grain sizes on the first area and on the second area in a single laser crystallization process by utilizing the heat sink phenomenon of ELA with or without the heat sink layer. Therefore, the image display system of the present invention can operate with good luminance uniformity.

Abstract: An organic light emitting diode (OLED) display and thin film transistor (TFT) manufacturing method thereof are disclosed. According to the present invention, poly-silicon layers for forming active areas of non-driving TFT (e.g. peripheral circuit TFT and switch TFT) and driving TFT used in the OLED display are respectively made by using standard laser crystallization method and non-laser crystallization method or low energy laser crystallization method. Therefore, the peripheral circuit TFT has excellent electrical performance such as high carrier mobility, while the OLED-driving TFT has good stability so that the resultant display can operate with improved luminance uniformity.

Abstract: A processing circuit for automatic detection and compensation of pixel defects includes a reading unit, a data buffer module, and a calculating module. The reading unit reads pixel values of a predetermined number of pixels in sequence. The pixel values include a target pixel value and a pixel value group adjacent to the target pixel value. The data buffer module receives the pixel values outputted from the reading unit, and stores the same temporarily in a FIFO manner. The calculating module calculates and processes the target pixel value and the pixel value group from the data buffer module to generate a processing value. If the processing value is equal to the target pixel value, the latter is outputted. If the processing value is not equal to the target pixel value, the former is outputted. Thus, pixel defects can be immediately detected and compensated when outputting the pixel values.