Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on then-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.

Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on then-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.

Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract: A UV light emitting device is disclosed. The UV light emitting device includes: a substrate; an n-type semiconductor layer disposed on the substrate; an active layer disposed on the n-type semiconductor layer; a hole injection layer disposed on the active layer and comprising Al; an Al-delta layer disposed on the hole injection layer and comprising Al; and a first p-type contact layer disposed on the Al-delta layer and having a higher doping concentration of p-type dopants than the hole injection layer, wherein the first p-type contact layer has a lower Al content than the hole injection layer, a band-gap of the first p-type contact layer is lower than or equal to energy of light emitted from the active layer, and the Al-delta layer has a higher Al content than the hole injection layer and allows holes to enter the active layer by tunneling therethrough.

Abstract: A light emitting diode includes: at least one light emitting chip; a substrate including lead frames electrically connected to electrodes of the at least one light emitting chip; a lens disposed on the substrate and enclosing the at least one light emitting chip; and an oil disposed in the lens and the substrate.

Abstract: A light source module includes a circuit board, light emitting diode chips mounted on the circuit board by flip-chip bonding or a surface mounting technology (SMT), and a diffusor covering the circuit board and the light emitting diode chips.

Abstract: A light source module includes a circuit board, board pads disposed on the circuit board, and a light emitting diode chip disposed on the board pads. The light emitting diode chip includes a substrate and a semiconductor stacking part disposed between the substrate and the circuit board, and the substrate includes an inclined part disposed at an upper portion thereof and a discharging part disposed at one side surface thereof.

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract: A light emitting diode includes: at least one light emitting chip; a substrate including lead frames electrically connected to electrodes of the at least one light emitting chip; a lens disposed on the substrate and enclosing the at least one light emitting chip; and an oil disposed in the lens and the substrate.

Abstract: Disclosed are a group III-V based transistor and a method for manufacturing same. The group III-V based transistor includes a laminated semiconductor structure having an upper surface and a lower surface and including a group III-V based semiconductor layer, and at least one 2DEG region extending from the upper surface of the laminated semiconductor structure to the lower surface thereof. A vertical-type GaN-based transistor using 2DEG can be provided by adopting the 2DEG region.

Abstract: A light source module, a fabrication method therefore, and a slim backlight unit including the same. The light source module includes a light emitting diode (LED) chip electrically connected to a substrate through a lower surface thereof, a wavelength conversion layer formed on the LED chip and enclosing at least the light exit face of the LED chip, and a reflector formed on a region of the LED chip excluding the light exit face.

Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.

Abstract: A light emitting diode and a method of fabricating the same, the light emitting diode including a substrate, a semiconductor layer formed on one surface of the substrate, and an anti-reflection element formed on the other surface of the substrate and including a nano-pattern. The anti-reflection element is interposed between the substrate and air.

Abstract: A light source module includes a circuit board, board pads disposed on the circuit board, and a light emitting diode chip disposed on the board pads. The light emitting diode chip includes a substrate and a semiconductor stacking part disposed between the substrate and the circuit board, and the substrate includes an inclined part disposed at an upper portion thereof and a discharging part disposed at one side surface thereof.

Abstract: A light source module includes a circuit board, light emitting diode chips mounted on the circuit board by flip-chip bonding or a surface mounting technology (SMT), and a diffusor covering the circuit board and the light emitting diode chips.

Abstract: Disclosed is a light source module capable of realizing a slim structure and providing excellent luminous efficiency. The light source module includes a circuit board, a light emitting diode chip mounted on the circuit board by flip-chip bonding or surface mount technology (SMT), a wavelength conversion layer disposed on the light emitting diode chip, and a reflector covering an upper surface and at least one of side surfaces of the light emitting diode chip.