Abstract: A ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer. The ferroelectric composite layer includes a first electrode layer, a second electrode layer, a ferroelectric layer and an antiferroelectric layer. The first electrode layer is opposite to the second electrode layer, and the ferroelectric layer and the antiferroelectric layer are disposed between the first electrode layer and the second electrode layer.

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, a ferroelectric composite layer disposed between the first electrode and the second electrode, and a first insulating layer disposed on one side of the ferroelectric composite layer.

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a substrate, a first conductive layer disposed on the substrate, a patterned oxide layer disposed on the first conductive layer and the substrate, exposing a part of the first conductive layer, a second conductive layer disposed on the exposed first conductive layer and the patterned oxide layer, an antiferroelectric layer disposed on the exposed first conductive layer and the second conductive layer, a ferroelectric layer disposed on the second conductive layer and located on the antiferroelectric layer, a conductive oxide layer disposed between the antiferroelectric layer, and a third conductive layer disposed on the conductive oxide layer and between the ferroelectric layer.

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a substrate, a first conductive layer disposed on the substrate, a patterned oxide layer disposed on the first conductive layer and the substrate, exposing a part of the first conductive layer, a second conductive layer disposed on the exposed first conductive layer and the patterned oxide layer, an antiferroelectric layer disposed on the exposed first conductive layer and the second conductive layer, a ferroelectric layer disposed on the second conductive layer and located on the antiferroelectric layer, a conductive oxide layer disposed between the antiferroelectric layer, and a third conductive layer disposed on the conductive oxide layer and between the ferroelectric layer.

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode layer having a dominant crystallographic orientation of (110) or (220), a second electrode layer opposite the first electrode layer, wherein the second electrode layer has a dominant crystallographic orientation of (110) or (220), and a ferroelectric layer disposed between the first electrode layer and the second electrode layer, wherein the ferroelectric layer has a dominant crystallographic orientation of (111).

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode layer having a dominant crystallographic orientation of (110) or (220), a second electrode layer opposite the first electrode layer, wherein the second electrode layer has a dominant crystallographic orientation of (110) or (220), and a ferroelectric layer disposed between the first electrode layer and the second electrode layer, wherein the ferroelectric layer has a dominant crystallographic orientation of (111).

Abstract: An automatic cleaning apparatus is configured to clean a floor and emit ultraviolet light for sterilizing the floor in a cleaning mode. Upon detecting that a wall is nearby, the automatic cleaning apparatus emits ultraviolet light toward a corner formed by the floor and the wall for sterilization.

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer.

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode, a second electrode opposite to the first electrode, at least one ferroelectric layer disposed between the first electrode and the second electrode, and at least one antiferroelectric layer disposed between the first electrode and the second electrode, wherein the antiferroelectric layer is in contact with the ferroelectric layer.

Abstract: A structure of random access memory includes a memory cell and a selector. The memory cell has two different conductive states according to a bias applied on the memory cell. The selector is electrically connected to the memory cell in series. An operation voltage is applied between two end terminals of the memory cell and the selector connected in series. A structure of the selector formed from multiple capacitors coupled in series, includes a plurality of dielectric layers corresponding to the capacitors; and a metal conductive layer, disposed between the dielectric layers. A material of the metal conductive layer is to resist a material inter-diffusion between adjacent two of the dielectric layers in different materials.

Abstract: Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.

Abstract: Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.

Abstract: A separation system for a methyl acetate hydrolysis is provided. The separation system comprises a reactive distillation system, a reflux system, a first separation system and a second separation. The reactive distillation system allows the hydrolysis of a methyl acetate solution to generate a first mixture and a second mixture. The reflux system is packed with a heterogeneous catalyst and coupled to the reactive distillation system, which refluxes the first mixture to the reactive distillation system. The first separation system is coupled to the reactive distillation system, which directs the second mixture thereinto so as to isolate an acetic acid and a third mixture therefrom. The second separation system is coupled to the first separation system, which directs the third mixture thereintio so as to separate a methanol therefrom. The methyl acetate feeding system is coupled to, one of the reactive distillation system and the reflux system, which feeds the methyl acetate solution thereinto.

Abstract: A separation system for a methyl acetate hydrolysis is provided. The separation system comprises a reactive distillation system, a reflux system, a first separation system and a second separation. The reactive distillation system allows the hydrolysis of a methyl acetate solution to generate a first mixture and a second mixture. The reflux system is packed with a heterogeneous catalyst and coupled to the reactive distillation system, which refluxes the first mixture to the reactive distillation system. The first separation system is coupled to the reactive distillation system, which directs the second mixture thereinto so as to isolate an acetic acid and a third mixture therefrom. The second separation system is coupled to the first separation system, which directs the third mixture thereintio so as to separate a methanol therefrom. The methyl acetate feeding system is coupled to, one of the reactive distillation system and the reflux system, which feeds the methyl acetate solution thereinto.