Abstract: A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over the first SiGe region. The second SiGe region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is lower than the first atomic percentage, wherein the first and the second SiGe regions form a source/drain stressor of a metal-oxide-semiconductor (MOS) device.

Abstract: A method includes forming a gate stack over a semiconductor substrate, and forming a first silicon germanium (SiGe) region in the semiconductor substrate and adjacent the gate stack. The first SiGe region has a first atomic percentage of germanium to germanium and silicon. A second SiGe region is formed over the first SiGe region. The second SiGe region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is lower than the first atomic percentage, wherein the first and the second SiGe regions form a source/drain stressor of a metal-oxide-semiconductor (MOS) device.

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.

Abstract: A semiconductor structure and methods for forming the same are provided. The semiconductor structure includes a semiconductor substrate; a gate stack on the semiconductor substrate; a SiGe region in the semiconductor substrate and adjacent the gate stack, wherein the SiGe region has a first atomic percentage of germanium to germanium and silicon; and a silicide region over the SiGe region. The silicide region has a second atomic percentage of germanium to germanium and silicon. The second atomic percentage is substantially lower than the first atomic percentage.

Abstract: An apparatus and system for precise lapping of recessed and protruding elements in a workpiece is disclosed. According to one embodiment, a system is provided having an air bearing surface with electrical components embedded therein to provide a desired surface dimension thereof. The described system embodiment comprises a non-abrasive lapping plate having a lapping surface with a plurality of grooves therein, a support structure for supporting a workpiece such that an air bearing surface thereof is exposed, and a non-abrasive liquid. When the non-abrasive liquid is dispensed between the air bearing surface and the lapping plate, the lapping plate contacts the air bearing surface such that the air bearing surface is lapped solely by the grooves in the lapping plate. The electrical components of the air bearing surface are lapped such that they are substantially uniform in dimension relative to the air bearing surface.

Abstract: A lapping method utilizing textured and conditioned lapping plates most suitable for finishing magnetic heads resulting in improved surface quality, less sensitivity to electrical shorts due to smears, and reduced surface height difference between the head elements exposed at the slider air bearing surface. A rough lapping phase is followed by a polishing phase that maintains the same mechanical motion between the work piece and lapping plate but utilizes only the lapping plate without abrasives of any kind to polish the work piece surface, and to clean up any deep textured marks resulting from the diamond slurry phase. A conductive liquid is utilized to provide lubrication and to minimize static charge.

Abstract: A method for producing sliders having positive camber on the air bearing surface. The method comprises (i) scribing the air bearing surface of a slider row along a line between individual sliders, (ii) flat plate lapping the air bearing surface of the slider row, and (iii) producing a pattern of stress on the back side of the slider row to create positive camber in each individual slider in the slider row.

Abstract: A method for finishing a pole tip trimmed read/write heat that includes a substrate with a pole tip structure having a shield, a shield/pole, and an outer pole. A gap region separates the pole and the shield/pole. First, pole tip trimming is performed to the read/write head to remove matter from the shield/pole, the pole, and the gap region. This defines a bridge composed of inward-facing extensions of the pole and shield/pole interconnected by an intervening region. This bridge separates recessed “trenches,” each formed by removing a contiguous mass from the shield/pole, the gap region, and the pole. Next, an overlayer is applied over the pole tip structure, filling the recessed trenches. The coated structure is then trimmed to remove all coating material overlying the shield/pole and pole. Trimming is continued to additionally remove a top layer of the protrusions of the pole and shield/pole to remove any rounded edges created by pole tip patterning, resulting in a more distinct write head.

Abstract: A method for producing sliders without alumina overcoat protrusion on the air bearing surface. The method comprises a method for removing alumina protrusion on the air bearing surface of a slider comprising contacting the air bearing surface of the slider with an aqueous base having a pH of about 9 to about 11.

Abstract: An air bearing slider embodiment of the present invention includes a body portion having an air bearing surface (ABS) side and a flexure surface side. The ABS side has at least one air bearing surface and at least one recessed area. A thin film composed of a compressive force material is deposited within the recessed area. The compressive force material produces an omnidirectional outward force within the recessed area that creates a positive crown and camber. Preferably, the thin film has a thickness range from 10 nm to 200 nm, and is composed of diamond-like carbon (DLC). An alternative air bearing slider includes a body portion with an ABS side and a flexure surface side. A thin film composed of a tensile force material is deposited upon said flexure side. The tensile force material creates an onmidirectional inward force on the flexure side which results in positive crown and camber. The manufacturing method for the improved sliders utilizes semiconductor processing techniques.