Abstract: The present disclosure is directed to methods for the formation of high-voltage nano-sheet transistors and low-voltage gate-all-around transistors on a common substrate. The method includes forming a fin structure with first and second nano-sheet layers on the substrate. The method also includes forming a gate structure having a first dielectric and a first gate electrode on the fin structure and removing portions of the fin structure not covered by the gate structure. The method further includes partially etching exposed surfaces of the first nano-sheet layers to form recessed portions of the first nano-sheet layers in the fin structure and forming a spacer structure on the recessed portions. In addition, the method includes replacing the first gate electrode with a second dielectric and a second gate electrode, and forming an epitaxial structure abutting the fin structure.

Abstract: According to various example embodiments, a prompt is superimposed over a second user profile page that is being viewed by a first user, the prompt inviting the first user to update their own user profile page, based on the second user profile page being viewed. For example, the prompt may invite the first user to add a piece of content on their profile page that is included in the second user profile page but is missing from the first user profile page.

Abstract: A method and a system for superimposing a prompt over a second user profile page being displayed on a client device, the prompt inviting a first user to update a first user profile page associated with the first user, based on the second user profile page being displayed.