Abstract: A semiconductor package includes a die stack including a first semiconductor die having a first interconnect structure, and a second semiconductor die having a second interconnect structure direct bonding to the first interconnect structure of the first semiconductor die. The second interconnect structure includes connecting pads disposed in a peripheral region around the first semiconductor die. First connecting elements are disposed on the connecting pads, respectively. A substrate includes second connecting elements on a mounting surface of the substrate. The first connecting elements are electrically connected to the second connecting elements through an anisotropic conductive structure.

Abstract: The present disclosure relates to a semiconductor package, a semiconductor bonding structure and a method of fabricating the same. The semiconductor package includes a first chip, a second chip and a conductive structure, wherein the conductive structure is disposed at a side of the second chip and over a second upper surface of the first interconnection structure to electrically connect to the first interconnection structure. The semiconductor bonding structure includes a first substrate, a plurality of first interconnection structures, a plurality of chips and a plurality of conductive structures, wherein the conductive structures are respectively disposed at a side of each of the chips and over a second upper surface of each first interconnection structure, to electrically connect to each first interconnection.

Abstract: A method may include forming a mask layer on top of a first dielectric layer formed on a first source/drain and a second source/drain, and creating an opening in the mask layer and the first dielectric layer that exposes portions of the first source/drain and the second source/drain. The method may include filling the opening with a metal layer that covers the exposed portions of the first source/drain and the second source/drain, and forming a gap in the metal layer to create a first metal contact and a second metal contact. The first metal contact may electrically couple to the first source/drain and the second metal contact may electrically couple to the second source/drain. The gap may separate the first metal contact from the second metal contact by less than nineteen nanometers.

Abstract: Provided is a failure mode analysis method for a memory device including the following steps. A wafer is scanned by a test system to generate a failure pattern of the wafer, and a failure count of a single-bit in the wafer is obtained by a test program. A single-bit grouping table is defined according to a word-line layout, a bit-line layout, and an active area layout. A core group and a gap group are formed through grouping in at least one process in a self-aligned double patterning process. Failure counts of single-bits in the core group and the gap group are respectively counted to generate core failure data and gap failure data.

Abstract: Provided is a failure mode analysis method for a memory device including the following steps. A wafer is scanned by a test system to generate a failure pattern of the wafer, and a failure count of a single-bit in the wafer is obtained by a test program. A single-bit grouping table is defined according to a word-line layout, a bit-line layout, and an active area layout. A core group and a gap group are formed through grouping in at least one process in a self-aligned double patterning process. Failure counts of single-bits in the core group and the gap group are respectively counted to generate core failure data and gap failure data.