Abstract: The present disclosure provides a memory device, a semiconductor device, and a method of operating a memory device. A memory device includes a memory cell, a bit line, a word line, a select transistor, a fuse element, and a heater. The bit line is connected to the memory cell. The word line is connected to the memory cell. The select transistor is disposed in the memory cell. A gate of the select transistor is connected to the word line. The fuse element is disposed in the memory cell. The fuse element is connected to the bit line and the select transistor. The heater is configured to heat the fuse element.

Abstract: A method for manufacturing an electronic device includes the steps of providing a flexible substrate, forming an electric circuit layer on the flexible substrate at an elevated temperature, and enhancing a transmittance of the flexible substrate after forming the electric circuit layer.

Abstract: An operating method of an optical system in a vehicle is provided. The optical system includes a display device. The display device includes a display panel and a plurality of light emitting units. The light emitting units are configured to emit a light to the display panel. The operating method includes the following steps. An emphasized portion of an object is determined. An image corresponding to the emphasized portion is displayed by the display device by adjusting a light intensity of at least a portion of the light emitted from the light emitting units.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A display device includes a substrate, at least one light emitting unit bound on the substrate, a transparency controllable unit disposed on the substrate, and an integrated circuit unit overlapped with the substrate. The integrated circuit unit includes a semiconducting structure and a conductive structure overlapped with the semiconducting structure. The integrated circuit unit is electrically connected to the at least one light emitting unit and the transparency controllable unit.

Abstract: The disclosure provides a transparent display device including a display panel. The display panel includes a display area, a non-display area, and a plurality of pixels. The non-display area is adjacent to the display area. The plurality of pixels are disposed in the display area. A difference between a transmittance of the display area and a transmittance of the non-display area is less than 30% of the transmittance of the display area.

Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.

Abstract: A transparent display device is provided. The transparent display device includes a display unit having a circuit area and a transparent area. The display unit includes a plurality of signal lines located in the circuit area, a plurality of pixel circuits electrically connected to the signal lines and located in the circuit area, a plurality of light-emitting elements driven by the pixel circuits and located in the circuit area, and an encapsulation layer located in the circuit area and the transparent area. A first thickness of the encapsulation layer located in the circuit area is different from a second thickness of the encapsulation layer located in the transparent area.

Abstract: A manufacturing method of an electronic element module is provided. The method includes: disposing a plurality of first micro-light-emitting diodes on a first temporary substrate; and replacing at least one defective micro-light-emitting diode of the first micro-light-emitting diodes with at least one second micro-light-emitting diode. The first micro-light-emitting diodes and at least one second micro-light-emitting diode are distributed on the first temporary substrate. The first micro-light-emitting diodes and at least one second micro-light-emitting diode have same properties, and at least one of the appearance difference, the height difference and the orientation difference exists between the first micro-light-emitting diodes and at least one second micro-light-emitting diode. A semiconductor structure and a display panel are also provided.

Abstract: The disclosure provides a display device. The display device includes a display panel and a vibration generating module. The vibration generating module is attached to the display panel and includes a substrate, a circuit layer, and a plurality of vibrators. The circuit layer and the plurality of vibrators are disposed on the substrate, and the plurality of vibrators are electrically connected to the circuit layer.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A cooling system for a computer power supply unit includes: a housing; a plurality of cooling fans; a temperature controller; at least one temperature sensor coupled electrically to the temperature controller; and a plurality of fan-driving circuits coupled electrically and respectively to the cooling fans and controlled by the temperature controller for activating and deactivating the cooling fans, respectively. The temperature controller is configured with different temperature settings, each corresponding to a number of the cooling fans, and controls the fan-driving circuits to activate a number of the cooling fans according to the temperature setting corresponding to a temperature detected by the temperature sensor.

Abstract: A control device includes a control module controlling a polarity switching unit connected electrically to a motor unit of a food processor to provide a first current path for an input power signal through the motor unit when the control module is operated in a processing mode, and further controlling the polarity switching unit to provide a second current path for the input power signal through the motor unit when the control module is operated in a braking mode. A power control unit is connected electrically to the motor unit and the control module, and controls the power control unit such that the power control unit reduces an amount of the input power signal that flows through the second current path during a braking period when the control module is operated in the braking mode.