Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: A ferroelectric device structure includes an array of ferroelectric capacitors overlying a substrate, first metal interconnect structures electrically connecting each of first electrodes of the array of ferroelectric capacitors to a first metal pad embedded in a dielectric material layer, and second metal interconnect structures electrically connecting each of the second electrodes of the array of ferroelectric capacitors to a second metal pad embedded in the dielectric material layer. The second metal pad may be vertically spaced from the substrate by a same vertical separation distance as the first metal pad is from the substrate. First metal lines laterally extending along a first horizontal direction may electrically connect the first electrodes to the first metal pad, and second metal lines laterally extending along the first horizontal direction may electrically connect each of the second electrodes to the second metal pad.

Abstract: An embodiment is a device including a first die and a substrate including a first surface and a second surface opposite the first surface. The device also includes an active device on the first surface of the substrate. The device also includes a first interconnect structure on the first surface of the substrate. The device also includes a through substrate via extending through the first interconnect structure and the substrate to the second surface of the substrate, the through substrate via being electrically coupled to metallization patterns in the first interconnect structure. The device also includes one or more material-filled trench structures extending from the second surface of the substrate into the substrate, the one or more material-filled trench structures being electrically isolated from the through substrate via.

Abstract: In an embodiment, a device includes: a first dielectric layer having a first sidewall; a second dielectric layer having a second sidewall; a word line between the first dielectric layer and the second dielectric layer, the word line having an outer sidewall and an inner sidewall, the inner sidewall recessed from the outer sidewall, the first sidewall, and the second sidewall; a memory layer extending along the outer sidewall of the word line, the inner sidewall of the word line, the first sidewall of the first dielectric layer, and the second sidewall of the second dielectric layer; and a semiconductor layer extending along the memory layer.

Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: A method includes forming a device die including forming integrated circuits on a semiconductor substrate; and forming a thermally conductive pillar extending into the semiconductor substrate. A cooling medium is attached over and contacting the semiconductor substrate to form a package, wherein the cooling medium is thermally coupled to the thermally conductive pillar.

Abstract: A magnetic tunnel junction (MTJ) memory cell comprising a connection via structure, a bottom electrode disposed on the connection via structure, a memory material stack disposed on the bottom electrode, and a conductive contact structure disposed on the memory material stack, in which a bottom surface of the conductive contact structure is in direct contact with a memory material layer of the memory material stack.

Abstract: A semiconductor device and method of manufacture are provided which help to support contacts while material is removed to form air gaps. In embodiments a contact is formed with an enlarged base to help support overlying portions of the contact. In other embodiments a scaffold material may also be placed prior to the formation of the air gaps in order to provide additional support.

Abstract: A system for halogenating olefinic-based elastomer, the system comprising a first extruder, a first kneader vessel downstream of said first extruder and in fluid communication with said first extruder, a second extruder downstream of said first kneader vessel and in fluid communication with said first kneader vessel, a second kneader vessel downstream of said second extruder and in fluid communication with said second extruder; and a third extruder downstream of said second kneader vessel and in fluid communication with said second kneader vessel.

Abstract: An intake swirl gasket is disclosed herein. It is installed between a cylinder head and an intake manifold and comprises plural airflow holes for respectively communicating with plural intake passages of the cylinder head; and plural diversion devices respectively disposed in the plural airflow holes and each having an axis and plural splitter blades extended from the axis for connecting to an inner wall of each of the plural airflow holes, wherein each of the plural splitter blades is shaped as an arc to form a recessed surface towards the intake manifold at one side thereof and a convex surface towards the cylinder head at the other side thereof, and wherein an included angle between each of the plural splitter blades and an end face of the intake swirl gasket oriented towards the cylinder head ranges from 50 to 80 degrees.

Abstract: An intake swirl gasket is disclosed herein. It is installed between a cylinder head and an intake manifold and comprises plural airflow holes for respectively communicating with plural intake passages of the cylinder head; and plural diversion devices respectively disposed in the plural airflow holes and each having an axis and plural splitter blades extended from the axis for connecting to an inner wall of each of the plural airflow holes, wherein each of the plural splitter blades is shaped as an arc to form a recessed surface towards the intake manifold at one side thereof and a convex surface towards the cylinder head at the other side thereof, and wherein an included angle between each of the plural splitter blades and an end face of the intake swirl gasket oriented towards the cylinder head ranges from 50 to 80 degrees.

Abstract: A system for producing a functionalized olefinic-based polymer, the system comprising a polymerization zone for producing an olefinic-based polymer comprising a mixing section, a deliquifying section, and a quenching section, wherein at least one section of the polymerization zone has a defined cross-sectional area that continually decreases from a first end to a second end of said section; a devolatilization zone comprising a kneader or extruder, wherein said devolatilization zone is downstream of said polymerization zone and in fluid communication with said polymerization zone; and a functionalization zone downstream of said devolatilization zone and in fluid communication with said devolatilization zone.

Abstract: A system for producing a functionalized olefinic-based polymer, the system comprising a polymerization zone for producing an olefinic-based polymer comprising a mixing section, a deliquifying section, and a quenching section, wherein at least one section of the polymerization zone has a defined cross-sectional area that continually decreases from a first end to a second end of said section; a devolatilization zone comprising a kneader or extruder, wherein said devolatilization zone is downstream of said polymerization zone and in fluid communication with said polymerization zone; and a functionalization zone downstream of said devolatilization zone and in fluid communication with said devolatilization zone.

Abstract: High Mooney viscosity elastomers having low volatiles content, and processes for producing such elastomers, are provided herein. In particular aspects, the elastomers are metallocene-catalyzed elastomers, such as mEPDM elastomers. Processes for producing such elastomers include devolatilization of an elastomer stream comprising such elastomers, using a kneader. The kneader is counterintuitively operated such that the internal agitating paddles rotate at relatively low speeds. It is believed these low speeds help maintain the elastomer stream as a toffee-like composition, preventing the elastomer stream within the kneader from becoming a crumbly composition, which is difficult to devolatilize.

Abstract: A system for halogenating olefinic-based elastomer, the system comprising a first extruder, a first kneader vessel downstream of said first extruder and in fluid communication with said first extruder, a second extruder downstream of said first kneader vessel and in fluid communication with said first kneader vessel, a second kneader vessel downstream of said second extruder and in fluid communication with said second extruder; and a third extruder downstream of said second kneader vessel and in fluid communication with said second kneader vessel.

Abstract: A blended multimodal polymer product is disclosed that comprises a first polymer, wherein the first polymer is a homopolymer of propylene or a propylene copolymer having an ethylene or a C4 to C10 olefin comonomer; and a second polymer, wherein the second polymer is a propylene homopolymer and a propylene copolymer having an ethylene or a C4 to C10 olefin comonomer, and wherein the first polymer and second polymer have a difference in heat of fusion of about 25 J/g or more. Methods for making such a polymer product using at least two reactors in parallel and for separating a propylene-based polymer from a solvent using a liquid-phase separator are also disclosed.

Abstract: A sludge treatment system with sludge drying acceleration function includes at least one sedimentation tank, at least one sludge pipe, and at least one group of hydroponic plant. The at least one sedimentation tank is disposed at the downstream of a reservoir. The at least one sludge pipe is disposed in the at least one sedimentation tank for leading the sludge into the at least one sedimentation tank through a leading method, such that the sludge in the at least one sedimentation tank is divided into a water layer and a mud layer. The at least one group of hydroponic plant is planted in the water layer of the at least one sedimentation tank, such that the growth of the at least one group of hydroponic plant accelerates the sludge drying process in the sedimentation tank.

Abstract: A blended multimodal polymer product is disclosed that comprises a first polymer, wherein the first polymer is a homopolymer of propylene or a propylene copolymer having an ethylene or a C4 to C10 olefin comonomer; and a second polymer, wherein the second polymer is a propylene homopolymer and a propylene copolymer having an ethylene or a C4 to C10 olefin comonomer, and wherein the first polymer and second polymer have a difference in heat of fusion of about 25 J/g or more. Methods for making such a polymer product using at least two reactors in parallel and for separating a propylene-based polymer from a solvent using a liquid-phase separator are also disclosed.