Abstract: A device and a method for nondestructively detecting a transient characteristic of a conductive screw of a turbo-generator rotor are provided. The device includes a personal computer (PC), an extremely-steep pulse generator, an ultra-high-frequency double-isolation transformer, and a pulse emitting and coupling module, which are connected in sequence. The pulse emitting and coupling module is connected to a load. A synchronous pulse receiving non-inductive divider circuit synchronously receives a characteristic waveform from the load, and the synchronous pulse receiving non-inductive divider circuit is connected to an ultra-high-speed analog/digital (A/D) module through a nonlinear saturation amplifying circuit that amplifies a signal. The PC receives a signal from the ultra-high-speed A/D module. The load includes a positive or negative excitation lead loop that is in a 180° symmetrical and instantaneous short-circuit state and a rotor shaft.

Abstract: A circuit includes cross coupled invertors including a first invertor and a second inventor. The first invertor and the second invertor are cross coupled at a first data node and a second data node. An input unit is coupled between the cross-coupled invertors and a power node. The input unit controls the cross-coupled invertors in response to a first input signal received at a first input terminal of the input unit and a second input signal received at a second input terminal of the input unit. A first transistor is connected between the power node and a supply node. The first transistor connects the power node to the supply node in response to an enable signal changing to a first value. A second transistor is connected between the power node and ground. The second transistor connects the power node to the ground in response to the enable signal changing to a second value.

Abstract: A reading device for capacitive sensing element comprises a differential capacitive sensing element, a modulator, a charge-voltage conversion circuit, a phase adjustment circuit, a demodulator and a low-pass filter. The modulator outputs a modulation signal to the common node of the capacitive sensing element and modulates the output signal of the capacitive sensing element. The two input terminals of the charge-to-voltage conversion circuit are connected to two non-common nodes of the capacitive sensing element. The charge-to-voltage converter read the output charge of the capacitive sensing element and convert it into a voltage signal. The modulator generates a demodulation signal through the phase adjustment circuit. The demodulator receives the demodulation signal from the phase adjustment circuit and demodulates the output of the charge-to-voltage conversion circuit. The low-pass filter is connected to the output of the demodulator for filtering the demodulated voltage signal to output the read signal.

Abstract: In an embodiment, a method includes: forming a first inter-metal dielectric (IMD) layer over a semiconductor substrate; forming a bottom electrode layer over the first IMD layer; forming a magnetic tunnel junction (MTJ) film stack over the bottom electrode layer; forming a first top electrode layer over the MTJ film stack; forming a protective mask covering a first region of the first top electrode layer, a second region of the first top electrode layer being uncovered by the protective mask; forming a second top electrode layer over the protective mask and the first top electrode layer; and patterning the second top electrode layer, the first top electrode layer, the MTJ film stack, the bottom electrode layer, and the first IMD layer with an ion beam etching (IBE) process to form a MRAM cell, where the protective mask is etched during the IBE process.

Abstract: A method, computer program product and system are provided for preloading debug information based on the presence of incremental source code files. Based on parsed input parameters to a source code debugger, a source code repository and a local storage area are searched for an incremental file. In response to the incremental file being located, a preload indicator in the incremental file, which is a source code file, is set. Based on the preload indicator being set, debug symbol data from the incremental file is merged to a preload symbol list. In response to receiving a command to examine the debug symbol data from the incremental file, the preload symbol list is searched for the requested debug symbol data.

Abstract: Provided are an auxiliary alloy casting piece, a high-remanence and high-coercive force NdFeB permanent magnet, and preparation methods thereof. The method for preparing the auxiliary alloy casting piece includes the following steps: providing an auxiliary alloy material including, by mass percentage, 40% to 45% of Pr, 1% to 2% of Co, 0.5% to 1% of Ga, 0.6% to 0.8% of B, 0.1% to 0.2% of V, 0.3% to 0.7% of Ti, and a balance of Fe; smelting the auxiliary alloy material to obtain a smelted material; and subjecting the smelted material to a quick-setting casting to obtain the auxiliary alloy casting piece; where the quick-setting casting includes a refining and a casting in sequence.

Abstract: A semiconductor device and a method for forming the same are provided. The semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first electrode, a second electrode on one side of the first electrode, and a resistive switching film between the first electrode and the second electrode. The first electrode, the resistive switching film and the second electrode are arranged along the first direction. The second semiconductor structure includes a first via and a first metal layer on the first via along a second direction and electrically connected to the first via. The first direction is perpendicular to the second direction. An upper surface of the first electrode, an upper surface of the second electrode, an upper surface of the resistive switching film and an upper surface of the first metal layer are coplanar.

Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

Abstract: A reference circuit for generating a reference current includes a plurality of resistive elements including at least one magnetic tunnel junction (MTJ). A control circuit is coupled to a first terminal of the at least one MTJ and is configured to selectively flow current through the at least one MTJ in the forward and inverse direction to generate a reference current.

Abstract: Provided are a tank support jig and a tank cleaning method. The tank support jig for supporting a cylindrical tank includes a curved body having a first end and a second end that face with an interval in between; and a connecting member disposed across the interval, the connecting member connecting the first end and the second end of the curved body such that the interval is adjustable, in which the curved body and the connecting member form an annular structure for the tank that is to be placed horizontally inside the annular structure with the curved body in close contact with at least part of an outer circumferential face of the tank along a circumferential direction of the tank.

Abstract: An electrostatic discharge (ESD) circuit includes a first ESD detection circuit, a first discharging circuit and a first ESD assist circuit. The first ESD detection circuit is coupled between a first node having a first voltage and a second node having a second voltage. The first discharging circuit includes a first transistor. The first transistor has a first gate, a first drain, a first source and a first body terminal. The first gate is coupled to the first ESD detection circuit by a third node. The first drain is coupled to the first node. The first source and the first body terminal are coupled together at the second node. The first ESD assist circuit is coupled between the second and third node, and configured to clamp a third voltage of the third node at the second voltage during an ESD event at the first or second node.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor wafer and a test structure. The semiconductor wafer has a substrate having a scribe line area, a first die area and a second die area. The first die area and the second die area are separated by the scribe line area extending along a first direction. The test structure is disposed in the scribe line area. The test structure includes a test device and a first test pad. The test device has a physical characteristic similar to a semiconductor device fabricated in the first die area or the second die area. The first test pad is electrically connected to the test device. A first distance between the first test pad and the first die area gradually increases from a center region to a peripheral region of the first test pad in the first direction.

Abstract: A method for processing a plurality of queries is provided according to embodiments of the present disclosure. In this method, based on a plurality of queries and an execution plan for the plurality of quires, a plurality of record identification (ID) numbers can be stored into a pool in a numerical order. Each of the plurality of record ID numbers can identify a data record in a database. Then, the execution plan can be performed to batch a plurality of data records corresponding to the plurality of record ID numbers in the database based on a distribution of the plurality of record ID numbers in the pool.

Abstract: The present invention relates to the technical field of endoscopes, and discloses a confocal endoscope with a fixing device.

Abstract: A magnetic tunnel junction (MTJ) device includes two magnetic tunnel junction elements and a magnetic shielding layer. The two magnetic tunnel junction elements are arranged side by side. The magnetic shielding layer is disposed between the magnetic tunnel junction elements. A method of forming said magnetic tunnel junction (MTJ) device includes the following steps. An interlayer including a magnetic shielding layer is formed. The interlayer is etched to form recesses in the interlayer. The magnetic tunnel junction elements fill in the recesses. Or, a method of forming said magnetic tunnel junction (MTJ) device includes the following steps. A magnetic tunnel junction layer is formed. The magnetic tunnel junction layer is patterned to form magnetic tunnel junction elements. An interlayer including a magnetic shielding layer is formed between the magnetic tunnel junction elements.

Abstract: A method for making a semiconductor structure includes: providing a substrate with a contact feature thereon; forming a dielectric layer on the substrate; etching the dielectric layer to form an interconnect opening exposing the contact feature; forming a metal layer on the dielectric layer and outside of the contact feature; and forming a graphene conductive structure on the metal layer, the graphene conductive structure filling the interconnect opening, being electrically connected to the contact feature, and having at least one graphene layer that extends in a direction substantially perpendicular to the substrate.

Abstract: A method for determining parameters of nanostructures, wherein the method includes steps as follows: Firstly, an X-ray reflection intensity measurement curve of a nanostructure to be tested is obtained by radiating the nanostructure to be tested with X-ray. The X-ray reflection intensity measurement curve is compared with an X-ray reflection intensity standard curve to obtain a comparison result. Subsequently, at least one parameter existing in the nanostructure to be tested is determined according to the comparison result.

Abstract: Disclosed are a dual-motor multi-gear hybrid transmission system and a vehicle. The dual-motor multi-gear hybrid transmission system includes an engine, a first motor, a second motor, a first clutch, a second clutch, a first planet row, a second planet row, a first input shaft, a second input shaft, a third input shaft and a brake assembly. The first input shaft is connected to the engine through the first clutch. The second input shaft is connected to the engine through the second clutch, and the second input shaft is sleeved outside the first input shaft. The first motor is connected to the engine. The second motor is connected to the first planet row through the third input shaft. The brake assembly is configured to brake the first planet row and/or the second planet row.