Abstract: Systems, methods, and apparatuses for vehicle localization. The vehicle can include a data processing system (“DPS”) including one or more processors and memory. The DPS can receive sensor data from sensors of the vehicle. The DPS can identify a historical road profile of the ground for a first location of the vehicle. The DPS can generate a current road profile of the ground. The DPS can determine a lateral deviation of the vehicle. The DPS can determine a match between the historical road profile and the current road profile at a second location that aligns with the lateral deviation. The DPS can provide an indication of a current location of the vehicle as the second location.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Abstract: The present disclosure relates to a method for growing a crystal. The method includes: weighing reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.

Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Abstract: A semiconductor structure including a self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion is provided. The semiconductor structure includes a substrate and a first dielectric layer on the substrate. A contact structure is embedded in the first dielectric layer and includes a conductive line. The semiconductor structure further includes a self-assembled monolayer on the conductive line, and a second dielectric layer on the first dielectric layer and the conductive line. The self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer.

Abstract: A semiconductor structure including a self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion is provided. The semiconductor structure includes a substrate and a first dielectric layer on the substrate. A contact structure is embedded in the first dielectric layer and includes a conductive line. The semiconductor structure further includes a self-assembled monolayer on the conductive line, and a second dielectric layer on the first dielectric layer and the conductive line. The self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer.

Abstract: Provided is a device for measuring a gas concentration, including: a preheating module configured to preheat and rectify an input to-be-measured gas to output a first stage gas; a differential pressure conversion module connected to the preheating module, wherein the differential pressure conversion module is configured to allow the first stage gas flowing through to generate a differential pressure change value; and a processing module configured to acquire a volume concentration of the to-be-measured gas according to the differential pressure change value; wherein the differential pressure conversion module comprises a capillary laminar flow unit having a plurality of capillaries, and flow channels of the plurality of capillaries become a main channel of a gas flow, so as to form a laminar flow structure. A method for measuring a gas concentration is further provided, including measuring a concentration of a to-be-measured gas using the above-mentioned device for measuring a gas concentration.

Abstract: The present disclosure relates integrated chip structure. The integrated chip structure includes a lower insulating structure disposed over a lower dielectric structure surrounding one or more lower interconnects. A bottom electrode via surrounded by one or more interior sidewalls of the lower insulating structure. The bottom electrode via includes a barrier surrounding a conductive core. A bottom electrode is arranged on the bottom electrode via, a data storage structure is over the bottom electrode, and a top electrode is over the data storage structure. The barrier includes a sidewall disposed along the one or more interior sidewalls of the lower insulating structure and a horizontally covering segment protruding outward from the sidewall to above a top surface of the lower insulating structure.

Abstract: Frameworks and methods for generating early-warning indicators of impending nonlinear instabilities of a dynamical system are provided. In accordance with one aspect, the framework includes a data collector and a system identification (SI) modeler. The data collector is coupled to the dynamical system and collects pre-bifurcation data. The SI modeler predicts early-warning indicators of impending nonlinear instabilities using only the pre-bifurcation data and the SI modeler includes a means for extrapolating Fokker-Planck coefficients in response to the pre-bifurcation data to generate precursors to a Hopf bifurcation and/or to identify a type of the Hopf bifurcation and/or to forecast the limit-cycle oscillation (LCO) amplitudes of a post-bifurcation regime. In addition, the SI modeler predicts the locations of the Hopf bifurcation points, the type of the Hopf bifurcation and the LCO amplitudes of the post-bifurcation regime.

Abstract: A plasma processing apparatus including a processing chamber having one or more sidewalls and a dome is provided. The plasma processing apparatus includes a workpiece support disposed in the processing chamber configured to support a workpiece during processing, an induction coil assembly for producing a plasma in the processing chamber, a Faraday shield disposed between the induction coil assembly and the dome, the Faraday shield comprising an inner portion and an outer portion, and a thermal management system. The thermal management system including one or more heating elements configured to heat the dome, and one or more thermal pads disposed between an outer surface of the dome and the heating elements, wherein the one or more thermal pads are configured to facilitate heat transfer between the one or more heating elements and the dome. Thermal management systems and methods for processing workpieces are also provided.

Abstract: A method for determining an electronic device, a system for determining an electronic device, a computer system, and a computer-readable storage medium, the method includes: acquiring a recognition result by recognizing a first action performed by an operating object through a first electronic device (S201); and determining a second electronic device which is controllable by the first electronic device according to the recognition result (S202).

Abstract: In some embodiments, the present disclosure relates to a method that includes forming a dielectric layer over a substrate and patterning the dielectric to form an opening in the dielectric layer. Further, a conductive material is formed within the opening of the dielectric layer. A planarization process is performed to remove portions of the conductive material arranged over the dielectric layer thereby forming a conductive feature within the opening of the dielectric layer. An anti-oxidation layer is formed on upper surfaces of the conductive feature, and then, the anti-oxidation layer is removed.

Abstract: An induction coil assembly is disclosed including two induction coils. Each induction coil includes a first winding commencing from a first terminal end in a first position in the z-direction and transitioning to a radially inner position in a plane normal to the z-direction and a second winding commencing from the radially inner position and transitioning to a radially outer position in a second plane normal to the z-direction and terminating in a second terminal end. Plasma processing apparatuses incorporating the induction coil assembly are also provided.

Abstract: Disclosed is a corrosion-resistant structure for a gas delivery system in a plasma processing apparatus. By providing a plating layer of corrosion-resistant material at the parts including the gas channel to avoid reacting with the delivered corrosive gas, metal and particle contaminations are reduced. By reversely mounting nozzles such that they reliably cover the plating layer inside the gas outlet holes, the disclosure prevents the corrosion-resistant material from being damaged by the plasma generated inside the cavity. By forming a corrosion-resistant yttrium oxide coating at the surfaces of the nozzles exposed to the cavity, the disclosure prevents the plasma from eroding the nozzles. The disclosure further leverages a flexible corrosion-resistant material, such as Teflon, to the sealing surfaces of the liner in contact with the dielectric window and the cavity, which improves the overall sealing effect of the liner.

Abstract: A fault injection method and apparatus, an electronic device and a storage medium are provided, which are related to the technical fields of computers and cloud computing, in particular to the field of testing. The fault injection method includes: acquiring a fault injection task, which includes at least one target service identification and a fault scenario corresponding to the target service identification; determining a target service according to each target service identification, and acquiring a state of the target service; and injecting the fault scenario corresponding to the target service identification into the target service in a case that the state of the target service is a normal state. The application is beneficial to reduction of labor cost.

Abstract: A semiconductor structure including a self-assembled monolayer for enhancing metal-dielectric adhesion and preventing metal diffusion is provided. The semiconductor structure includes a substrate and a first dielectric layer on the substrate. A contact structure is embedded in the first dielectric layer and includes a conductive line. The semiconductor structure further includes a self-assembled monolayer on the conductive line, and a second dielectric layer on the first dielectric layer and the conductive line. The self-assembled monolayer is chemically bonded to the conductive line and the second dielectric layer.

Abstract: A capacitor insulation system is disclosed in the present application. The insulation system includes a dielectric fluid containing a first voltage stabilizing additive of a first concentration. The insulation system further includes a dielectric film containing the first voltage stabilizing additive of a second concentration and impregnated in the dielectric fluid. The first concentration is greater than the second concentration. The insulation system prepared according to the present disclosure can provide an increased and quite stable dielectric strength.

Abstract: A humidifier includes plural separators each formed in a plate shape, the separator including a flow path on each of a front side and a back side thereof, and a water exchanging film sandwiched between the separators at a boundary thereof which are adjacent to each other in a state where the plural separators are stacked on each other. Humidified gas flows in one of the flow paths facing each other with the water exchanging film therebetween, and dry gas flows in the other of the flow paths. The water exchanging film is formed in an elongated shape, and different areas of the water exchanging film are sandwiched by the separators at plural boundaries thereof.

Abstract: A fault injection method and apparatus, an electronic device and a storage medium are provided, which are related to the technical fields of computers and cloud computing, in particular to the field of testing. The fault injection method includes: acquiring a fault injection task, which includes at least one target service identification and a fault scenario corresponding to the target service identification; determining a target service according to each target service identification, and acquiring a state of the target service; and injecting the fault scenario corresponding to the target service identification into the target service in a case that the state of the target service is a normal state. The application is beneficial to reduction of labor cost.

Abstract: A backup management method and system, an electronic device and a medium are provided. The backup management method includes: receiving a backup protocol of a user, the backup protocol including information of a backup target machine and information of a backup medium, the backup target machine being a machine where source data of data to be backed up is located, and the backup medium being a dynamically expandable storage system; generating a backup task based on the backup protocol; and sending the backup task to a backup client provided on the backup target machine so as to cause the backup client to execute the backup task.