Abstract: An integrated circuit device includes a gate stack disposed over a substrate. A first L-shaped spacer is disposed along a first sidewall of the gate stack and a second L-shaped spacer is disposed along a second sidewall of the gate stack. The first L-shaped spacer and the second L-shaped spacer include silicon and carbon. A first source/drain epitaxy region and a second source/drain epitaxy region are disposed over the substrate. The gate stack is disposed between the first source/drain epitaxy region and the second source/drain epitaxy region. An interlevel dielectric (ILD) layer disposed over the substrate. The ILD layer is disposed between the first source/drain epitaxy region and a portion of the first L-shaped spacer disposed along the first sidewall of the gate stack and between the second source/drain epitaxy region and a portion of the second L-shaped spacer disposed along the second sidewall of the gate stack.

Abstract: A memory device includes a first stacking structure, a second stacking structure, a plurality of first isolation structures, gate dielectric layers, channel layers and conductive pillars. The first stacking structure includes a plurality of first gate layers, and a second stacking structure includes a plurality of second gate layers, where the first stacking structure and the second stacking structure are located on a substrate and separated from each other through a trench. The first isolation structures are located in the trench, where a plurality of cell regions are respectively confined between two adjacent first isolation structures of the first isolation structures in the trench, where the first isolation structures each includes a first main layer and a first liner surrounding the first main layer, where the first liner separates the first main layer from the first stacking structure and the second stacking structure.

Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.

Abstract: A method of decoding a bitstream by an electronic device is provided. A block unit is determined from an image frame received from the bitstream. An intra prediction mode index corresponding to one of wide-angle candidate modes is determined for the block unit. The electronic device determines whether the intra prediction mode index is different from predefined indices each corresponding to one of predefined wide-angle modes in the wide-angle candidate modes. Filtered samples are generated based on reference samples neighboring the block unit. The filtered samples are generated by an interpolation filter when the intra prediction mode index is different from the predefined indices. The filtered samples are generated by a reference filter when the intra prediction mode index is equal to at least one of the predefined indices. The block unit is reconstructed based on the filtered samples along a mode direction of the intra prediction mode index.

Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.

Abstract: A device includes a first channel layer, a second channel layer, a gate structure, a source/drain epitaxial structure, and a source/drain contact. The first channel layer and the second channel layer are arranged above the first channel layer in a spaced apart manner over a substrate. The gate structure surrounds the first and second channel layers. The source/drain epitaxial structure is connected to the first and second channel layers. The source/drain contact is connected to the source/drain epitaxial structure. The second channel layer is closer to the source/drain contact than the first channel layer is to the source/drain contact, and the first channel layer is thicker than the second channel layer.

Abstract: An HOD device, comprising: a framework; covering material, covering the frame work; at least one conductive region, provided on or in the covering material; wherein the conductive region is coupled to a capacitance detection circuit or a predetermined voltage level. The HOD device can be a vehicle control device such as a steering wheel. The conductive region comprises conductive wires which can be threads of the covering material. By this way, the arrangements of the conductive wires can be changed corresponding to the size or the shape of the frame work or any other requirements. Also, the interference caused by unstable factors can be improved since the conductive wires can be coupled to a ground source of the vehicle to provide a short capacitance sensing path.

Abstract: A memory device includes at least one bit line, at least one word line, at least one memory cell, at least one source line, and a controller electrically coupled to the at least one memory cell via the at least one word line, the at least one bit line, and the at least one source line. The memory cell includes a first transistor, data storage elements, and second transistors corresponding to the data storage elements. The first transistor includes a gate electrically coupled to the word line, and first and second source/drains. Each data storage element and the corresponding second transistor are electrically coupled in series with the first source/drain of the first transistor and the bit line. The controller controllably applies a voltage other than a ground voltage to the at least one source line in an operation of a selected data storage element among the data storage elements.

Abstract: A system includes one or more data processors and a non-transitory computer-readable storage medium containing instructions which, when executed on the one or more data processors, cause the one or more data processors to perform operations. The operations include receiving a modified basic input-output system (BIOS) setting using an application programming interface (API). The modified BIOS setting includes an attribute describing at least one extensible firmware interface (EFI) variable. The operations further include storing the modified BIOS setting in a future setting data structure in a baseboard management controller (BMC). The operations further include providing a current setting data structure stored in the BMC. The operations further include replacing at least a portion of the current setting data structure with the modified BIOS setting to provide a modified current setting data structure. The modified current setting data structure is then applied to the system.

Abstract: A method and apparatus for forming tungsten features in semiconductor devices is provided. The method includes exposing a top opening of a feature formed in a substrate to a physical vapor deposition (PVD) process to deposit a tungsten liner layer within the feature. The PVD process is performed in a first processing region of a first processing chamber and the tungsten liner layer forms an overhang portion, which partially obstructs the top opening of the feature. The substrate is transferred from the first processing region of the first processing chamber to a second processing region of a second processing chamber without breaking vacuum. The overhang portion is exposed to nitrogen-containing radicals in the second processing region to inhibit subsequent growth of tungsten along the overhang portion. The feature is exposed to a tungsten-containing precursor gas to form a tungsten fill layer over the tungsten liner layer within the feature.

Abstract: A setting method of in-memory computing simulator includes: performing a plurality of test combinations by an in-memory computing device and recording a plurality of first estimation indices corresponding to the plurality of test combinations respectively, wherein each of the plurality of test combinations includes one of a plurality of neural network models and one of a plurality of datasets, executing a simulator according to the plurality of test combinations by a processing device and recording a plurality of second estimation indices corresponding to the plurality of test combinations respectively, wherein the simulator has a plurality of adjustable settings; calculating a correlation sum according to the plurality of first estimation indices and the plurality of second estimation indices by the processing device, and performing an optimal algorithm to search an optimal parameter in the setting space constructed by the plurality of settings so that the correlation sum is maximal.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: A semiconductor package including a ring structure with one or more indents and a method of forming are provided. The semiconductor package may include a substrate, a first package component bonded to the substrate, wherein the first package component may include a first semiconductor die, a ring structure attached to the substrate, wherein the ring structure may encircle the first package component in a top view, and a lid structure attached to the ring structure. The ring structure may include a first segment, extending along a first edge of the substrate, and a second segment, extending along a second edge of the substrate. The first segment and the second segment may meet at a first corner of the ring structure, and a first indent of the ring structure may be disposed at the first corner of the ring structure.

Abstract: A positive electrode and a battery employing the same encapsulant composition are provided. The positive electrode includes a positive electrode active layer and a first layer, wherein the first layer is disposed on the positive electrode active layer, and the first layer includes a lithium-iron-phosphorus-containing oxide and a first binder. The electric resistance ratio of the first layer to the positive electrode active layer is greater than or equal to 100.

Abstract: A method for manufacturing a porous membrane suitable for use as a separator of a lithium ion battery, comprising the following steps: 1) compounding a polymer and hydrophobic filler by dry mixing; 2) extruding the compounded mixture to obtain a cast film and 3) stretching the cast film to obtain the porous membrane. A porous membrane suitable for use as a separator of a lithium ion battery, a separator for a lithium ion battery, a lithium ion battery, and a device are also provided.

Abstract: A system includes one or more data processors and a non-transitory computer-readable storage medium containing instructions which, when executed on the one or more data processors, cause the one or more data processors to perform operations. The operations include receiving a modified basic input-output system (BIOS) setting using an application programming interface (API). The modified BIOS setting includes an attribute describing at least one extensible firmware interface (EFI) variable. The operations further include storing the modified BIOS setting in a future setting data structure in a baseboard management controller (BMC). The operations further include providing a current setting data structure stored in the BMC. The operations further include replacing at least a portion of the current setting data structure with the modified BIOS setting to provide a modified current setting data structure. The modified current setting data structure is then applied to the system.

Abstract: Provided are a lithium ion battery, an electrode of a lithium ion battery, and an electrode material. An electrode material of the lithium ion battery includes electrode active powder and a metal thin film. The metal thin film partially or completely wraps a surface of the electrode active powder, in which the metal thin film includes silver, gold, platinum, palladium, aluminum, magnesium, zinc, tin, or an alloy of the foregoing.

Abstract: A system and method for automatically generating a control bifurcation signal to configure ports of a PCIe IO unit on a computing device. The lanes of the PCIe IO unit are divided into initial ports of the lowest granularity. It is determined whether a PCIe device is connected to each of the initial ports. The bifurcation port configuration of the PCIe IO unit is determined based on the initial ports having a connected PCIe device. Ports for the PCIe IO unit are configured based on the bifurcation port configuration.

Abstract: A system and method for automatically generating a control bifurcation signal to configure ports of a PCIe IO unit on a computing device. The lanes of the PCIe IO unit are divided into initial ports of the lowest granularity. It is determined whether a PCIe device is connected to each of the initial ports. The bifurcation port configuration of the PCIe IO unit is determined based on the initial ports having a connected PCIe device. Ports for the PCIe IO unit are configured based on the bifurcation port configuration.

Abstract: A system and method for automatically generating a control bifurcation signal to configure ports of a PCIe IO unit on a computing device. The lanes of the PCIe IO unit are divided into initial ports of the lowest granularity. It is determined whether a PCIe device is connected to each of the initial ports. The bifurcation port configuration of the PCIe IO unit is determined based on the initial ports having a connected PCIe device. Ports for the PCIe IO unit are configured based on the bifurcation port configuration.