Patents by Inventor Yu-Han Wang

Yu-Han Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240203949
    Abstract: A semiconductor device having a redistribution structure and a method of forming the same are provided. A semiconductor device includes a semiconductor structure, a redistribution structure over and electrically coupled the semiconductor structure, and a connector over and electrically coupled to the redistribution structure. The redistribution structure includes a base via and stacked vias electrically interposed between the base via and the connector. The stacked vias are laterally spaced apart from the base via.
    Type: Application
    Filed: February 28, 2024
    Publication date: June 20, 2024
    Inventors: Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
  • Publication number: 20240194611
    Abstract: In an embodiment, a device includes: a molding compound; an integrated circuit die encapsulated in the molding compound; a through via adjacent the integrated circuit die; and a redistribution structure over the integrated circuit die, the molding compound, and the through via, the redistribution structure electrically connected to the integrated circuit die and the through via, the redistribution structure including: a first dielectric layer disposed over the molding compound; a first conductive via extending through the first dielectric layer; a second dielectric layer disposed over the first dielectric layer and the first conductive via; and a second conductive via extending through the second dielectric layer and into a portion of the first conductive via, an interface between the first conductive via and the second conductive via being non-planar.
    Type: Application
    Filed: February 26, 2024
    Publication date: June 13, 2024
    Inventors: Po-Han Wang, Hung-Jui Kuo, Yu-Hsiang Hu
  • Publication number: 20240186257
    Abstract: According to one embodiment, a semiconductor device is provided. The semiconductor device includes a first semiconductor module, a redistribution layer (RDL) module and a second semiconductor module. The RDL module is disposed on the first semiconductor module. The RDL module includes a plurality of polymer layers and a plurality of vias. The polymer layers are stacked on the first semiconductor module. The vias are disposed within the polymer layers. The second semiconductor module is disposed on the RDL module. A height difference of a top surface of at least one of the polymer layers ranges from 0 um to 1 um; or an angle between a sidewall and a bottom surface of at least one of the vias ranges from 90° to 95°; or a glass transition temperature (Tg) of at least one of the polymer layers is larger than 260° C.
    Type: Application
    Filed: January 19, 2023
    Publication date: June 6, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Che TU, Po-Nan YEH, Miao-Ken HUNG, Po-Han WANG, Yu-Hsiang HU, Hung-Jui KUO
  • Patent number: 12002534
    Abstract: Routing arrangements for 3D memory arrays and methods of forming the same are disclosed. In an embodiment, a memory array includes a ferroelectric (FE) material contacting a first word line; an oxide semiconductor (OS) layer contacting a source line and a bit line, the FE material being disposed between the OS layer and the first word line; a dielectric material contacting the FE material, the FE material being between the dielectric material and the first word line; an inter-metal dielectric (IMD) over the first word line; a first contact extending through the IMD to the first word line, the first contact being electrically coupled to the first word line; a second contact extending through the dielectric material and the FE material; and a first conductive line electrically coupling the first contact to the second contact.
    Type: Grant
    Filed: June 16, 2022
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Meng-Han Lin, Chenchen Jacob Wang, Yi-Ching Liu, Han-Jong Chia, Sai-Hooi Yeong, Yu-Ming Lin, Yih Wang
  • Publication number: 20240175810
    Abstract: A gas sensing device for detecting a to-be-detected substance in a respiratory gas exhaled by a user includes a housing permitting entrance of the respiratory gas, and a sensing module disposed in the housing. The sensing module includes a light chamber permitting the respiratory gas to pass therethrough, a light source unit emitting light into the light chamber, first and second light sensing units outputting respectively first and second detected signals indicating first and second detected intensities respectively of first and second portions of the light whose wavelengths fall within first and second wavelength ranges, respectively, and a processing unit electrically connected to the first and second light sensing units and determining, based on the first and second detected signals, that the to-be-detected substance exists in the respiratory gas when a difference occurs in each of the first and second detected intensities over time.
    Type: Application
    Filed: May 17, 2023
    Publication date: May 30, 2024
    Inventors: Yu-Ren HUANG, Li-Yu WANG, Ming-Chun HSIAO, Chun-Han HUANG, Yu-Da CHIU
  • Publication number: 20240170323
    Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices.
    Type: Application
    Filed: January 30, 2024
    Publication date: May 23, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mrunal Abhijith KHADERBAD, Ko-Feng Chen, Zheng-Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
  • Patent number: 11988847
    Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a fixed portion, a first movable portion, a second movable portion, a first driving assembly, and a second driving assembly. The first movable portion is movable relative to the fixed portion. The second movable portion is used for holding an optical element having a main axis, and is movable relative to the first movable portion. The first driving assembly is used for driving the first movable portion to move in a first dimension relative to the fixed portion, and the second driving assembly is used for driving the second movable portion to move in a second dimension relative to the fixed portion. The first dimension and the second dimension are different.
    Type: Grant
    Filed: July 26, 2021
    Date of Patent: May 21, 2024
    Assignee: TDK TAIWAN CORP.
    Inventors: Yun-Fei Wang, Yu-Huai Liao, Sheng-Zong Chen, Wei-Han Hsia, Kun-Shih Lin
  • Patent number: 11991886
    Abstract: A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a first layer stack and a second layer stack successively over a substrate, where the first layer stack and the second layer stack have a same layered structure that includes a layer of a first electrically conductive material over a layer of a first dielectric material, where the first layer stack extends beyond lateral extents of the second layer stack; forming a trench that extends through the first layer stack and the second layer stack; lining sidewalls and a bottom of the trench with a ferroelectric material; conformally forming a channel material in the trench over the ferroelectric material; filling the trench with a second dielectric material; forming a first opening and a second opening in the second dielectric material; and filling the first opening and the second opening with a second electrically conductive material.
    Type: Grant
    Filed: January 9, 2023
    Date of Patent: May 21, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Meng-Han Lin, Bo-Feng Young, Han-Jong Chia, Sheng-Chen Wang, Feng-Cheng Yang, Sai-Hooi Yeong, Yu-Ming Lin
  • Publication number: 20240164109
    Abstract: In an embodiment, a device includes: a word line extending in a first direction; a data storage layer on a sidewall of the word line; a channel layer on a sidewall of the data storage layer; a back gate isolator on a sidewall of the channel layer; and a bit line having a first main region and a first extension region, the first main region contacting the channel layer, the first extension region separated from the channel layer by the back gate isolator, the bit line extending in a second direction, the second direction perpendicular to the first direction.
    Type: Application
    Filed: January 8, 2024
    Publication date: May 16, 2024
    Inventors: Meng-Han Lin, Han-Jong Chia, Sheng-Chen Wang, Feng-Cheng Yang, Yu-Ming Lin, Chung-Te Lin
  • Patent number: 11985825
    Abstract: A memory array device includes a stack of transistors over a semiconductor substrate, a first transistor of the stack being disposed over a second transistor of the stack. The first transistor includes a first memory film along a first word line and a first channel region along a source line and a bit line, the first memory film being disposed between the first channel region and the first word line. The second transistor includes a second memory film along a second word line and a second channel region along the source line and the bit line, the second memory film being disposed between the second channel region and the second word line. The memory array device includes a first via electrically connected to the first word line and a second via electrically connected to the second word line, the second staircase via and the first staircase via having different widths.
    Type: Grant
    Filed: April 15, 2021
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Meng-Han Lin, Feng-Cheng Yang, Sheng-Chen Wang, Sai-Hooi Yeong, Yu-Ming Lin, Han-Jong Chia
  • Patent number: 11979479
    Abstract: A packet sorting and reassembly circuit module, including a header parser, an information processing circuit, at least one state tracking and reassembly circuit, and an output arbiter, is provided. The header parser is configured to analyze multiple first packet segments to obtain header information corresponding to a first network packet, wherein the first network packet is transmitted based on a transmission control protocol (TCP) communication protocol. The information processing circuit is configured to transmit the first packet segments and sideband information corresponding to the first packet segments to a first state tracking and reassembly circuit among the at least one state tracking and reassembly circuit according to the header information. The first state tracking and reassembly circuit is configured to reassemble and sort the first packet segments according to the sideband information. The output arbiter is configured to output the first packet segments according to a sorting result.
    Type: Grant
    Filed: January 16, 2023
    Date of Patent: May 7, 2024
    Assignees: Chung Yuan Christian University, KGI Securities Co. Ltd.
    Inventors: Yu-Kuen Lai, Chao-Lin Wang, He-Ping Li, Cheng-Han Chuang, Kai-Po Chang
  • Patent number: 11973023
    Abstract: A stacked via structure including a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer and a second conductive via is provided. The first dielectric layer includes a first via opening. The first conductive via is in the first via opening. A first level height offset is between a top surface of the first conductive via and a top surface of the first dielectric layer. The first redistribution wiring covers the top surface of the first conductive via and the top surface of the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer and the first redistribution wiring. The second dielectric layer includes a second via opening. The second conductive via is in the second via opening. The second conductive via is electrically connected to the first redistribution wiring through the second via opening of the second dielectric layer.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: April 30, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Han Wang, Hung-Jui Kuo, Yu-Hsiang Hu
  • Publication number: 20240137431
    Abstract: A packet sorting and reassembly circuit module, including a header parser, an information processing circuit, at least one state tracking and reassembly circuit, and an output arbiter, is provided. The header parser is configured to analyze multiple first packet segments to obtain header information corresponding to a first network packet, wherein the first network packet is transmitted based on a transmission control protocol (TCP) communication protocol. The information processing circuit is configured to transmit the first packet segments and sideband information corresponding to the first packet segments to a first state tracking and reassembly circuit among the at least one state tracking and reassembly circuit according to the header information. The first state tracking and reassembly circuit is configured to reassemble and sort the first packet segments according to the sideband information. The output arbiter is configured to output the first packet segments according to a sorting result.
    Type: Application
    Filed: January 16, 2023
    Publication date: April 25, 2024
    Applicants: Chung Yuan Christian University, KGI Securities Co. Ltd.
    Inventors: Yu-Kuen Lai, Chao-Lin Wang, He-Ping Li, Cheng-Han Chuang, Kai-Po Chang
  • Publication number: 20240126174
    Abstract: A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a first portion of the photoresist corresponding to a first opaque portion of the first stitching region is unexposed. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, and a second portion of the photoresist corresponding to a second opaque portion of the second stitching region is unexposed and is overlapping with the first portion of the photoresist.
    Type: Application
    Filed: December 28, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Che Tu, Po-Han Wang, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • Patent number: 11955547
    Abstract: An integrated circuit device includes a gate stack disposed over a substrate. A first L-shaped spacer is disposed along a first sidewall of the gate stack and a second L-shaped spacer is disposed along a second sidewall of the gate stack. The first L-shaped spacer and the second L-shaped spacer include silicon and carbon. A first source/drain epitaxy region and a second source/drain epitaxy region are disposed over the substrate. The gate stack is disposed between the first source/drain epitaxy region and the second source/drain epitaxy region. An interlevel dielectric (ILD) layer disposed over the substrate. The ILD layer is disposed between the first source/drain epitaxy region and a portion of the first L-shaped spacer disposed along the first sidewall of the gate stack and between the second source/drain epitaxy region and a portion of the second L-shaped spacer disposed along the second sidewall of the gate stack.
    Type: Grant
    Filed: December 20, 2018
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Te-Jen Pan, Yu-Hsien Lin, Hsiang-Ku Shen, Wei-Han Fan, Yun Jing Lin, Yimin Huang, Tzu-Chung Wang
  • Publication number: 20240113089
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a die, an underfill layer, a patterned dielectric layer and a plurality of conductive terminals. The die has a front surface and a back surface opposite to the front surface. The underfill layer encapsulates the die, wherein a surface of the underfill layer and the back surface of the die are substantially coplanar to one another. The patterned dielectric layer is disposed on the back surface of the die. The conductive terminals are disposed on and in contact with a surface of the patterned dielectric layer and partially embedded in the patterned dielectric layer to be in contact with the die, wherein a portion of the surface of the patterned dielectric layer that directly under each of the conductive terminals is substantially parallel with the back surface of the die.
    Type: Application
    Filed: January 10, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tian Hu, Po-Han Wang, Sih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo
  • Fan
    Patent number: 11946483
    Abstract: A fan is provided herein, including a housing, a hub, and a plurality of blades. The housing includes a top case and a bottom case. The hub is rotatably disposed between the top case and the bottom case in an axial direction. The blades extend from the hub in a radial direction, located between the top case and the bottom case. Each of the blades has a proximal end and a distal end. The proximal end is connected to the hub. The distal end is opposite from the proximal end, located at the other side of the blade, having at least one recessed portion. Each of the recessed portions form a passage for air.
    Type: Grant
    Filed: May 17, 2023
    Date of Patent: April 2, 2024
    Assignee: ACER INCORPORATED
    Inventors: Jau-Han Ke, Tsung-Ting Chen, Chun-Chieh Wang, Yu-Ming Lin, Cheng-Wen Hsieh, Wen-Neng Liao
  • Patent number: 11948918
    Abstract: A semiconductor device having a redistribution structure and a method of forming the same are provided. A semiconductor device includes a semiconductor structure, a redistribution structure over and electrically coupled the semiconductor structure, and a connector over and electrically coupled to the redistribution structure. The redistribution structure includes a base via and stacked vias electrically interposed between the base via and the connector. The stacked vias are laterally spaced apart from the base via.
    Type: Grant
    Filed: November 17, 2020
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo
  • Patent number: 11950428
    Abstract: A memory device includes a first stacking structure, a second stacking structure, a plurality of first isolation structures, gate dielectric layers, channel layers and conductive pillars. The first stacking structure includes a plurality of first gate layers, and a second stacking structure includes a plurality of second gate layers, where the first stacking structure and the second stacking structure are located on a substrate and separated from each other through a trench. The first isolation structures are located in the trench, where a plurality of cell regions are respectively confined between two adjacent first isolation structures of the first isolation structures in the trench, where the first isolation structures each includes a first main layer and a first liner surrounding the first main layer, where the first liner separates the first main layer from the first stacking structure and the second stacking structure.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: April 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Chen Wang, Meng-Han Lin, Sai-Hooi Yeong, Yu-Ming Lin, Han-Jong Chia
  • Patent number: 11942417
    Abstract: A device includes a sensor die having a sensing region at a top surface of the sensor die, an encapsulant at least laterally encapsulating the sensor die, a conductive via extending through the encapsulant, and a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure includes a first dielectric layer extending over the encapsulant and the top surface of the sensor die, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yung-Chi Chu, Sih-Hao Liao, Po-Han Wang, Yu-Hsiang Hu, Hung-Jui Kuo