Abstract: Provided is a propylene-based resin composition that can be molded into molded bodies that have high thermal stability and emit less odor. The propylene-based resin composition contains (A) a propylene-based polymer, (B) an inorganic filler; and (C) a hindered amine light stabilizer. The amine compound concentration in a volatile gas generated when a molded body formed by molding the propylene-based resin composition is heated at 100° C. for 15 minutes is 3 to 40 mass ppm.

Abstract: Provided is an olefin resin composition that has low fogging properties and that emit less odor when exposed to high temperatures. The olefin resin composition contains an olefin polymer, an inorganic filler, and 0.001 to 3 mass % of at least one selected from the group consisting of compounds represented by formula (1) below and basic zinc carbonate. M(OH)q(R1—CO2)r??(1) (in formula (1), M represents a zinc atom or an aluminum atom; q represents 0, 1, 2 or 3; r represents 0, 1, 2 or 3; when M is a zinc atom, q+r is 2, or when M is an aluminum atom, q+r is 3; when q is 0, R1 represents a C10-C25 monovalent linear aliphatic hydrocarbon group substituted by a hydroxy group; and when q is 1, 2 or 3, R1 represents a C10-C25 monovalent linear aliphatic hydrocarbon group optionally substituted by a hydroxy group.

Abstract: A propylene polymer composition comprising a propylene polymer and an ethylene-?-olefin copolymer (provided that the ethylene-?-olefin copolymer is not the propylene polymer), the propylene polymer composition satisfying requirement (I): Requirement (I) an absolute value of a difference between a die swell ratio at a shear rate of 24 sec?1 and a die swell ratio at a shear rate of 6,080 sec?1 is 0.29 or less. One embodiment of the present invention is a propylene polymer composition which additionally satisfies the requirement (II). Requirement (II): The ethylene triad chains (EEE) in an ortho-dichlorobenzene-insoluble fraction are 2.0 mol % or more.

Abstract: A wavelength conversion member containing a fluorescent material having, for example, a perovskite-type structure maintained with high light emission intensity; a light emitting device; and a method for producing a wavelength conversion member. The wavelength conversion member includes a translucent member containing a resin, a wavelength conversion layer containing a fluorescent material having, for example, a perovskite-type structure, and a composition of ABX3, and a first intermediate layer between the translucent member and the wavelength conversion layer. The method for producing a wavelength conversion member includes forming a first intermediate layer on a surface of a first translucent member containing a resin, and forming a first wavelength conversion layer containing a first fluorescent material having, for example, a perovskite-type structure on a surface of the first intermediate layer.

Abstract: The present invention relates to a polyolefin resin composition containing at least: (A) 100 parts by mass of a polyolefin resin, (B) 0.01 to 5 parts by mass of a compound having at least one (meth)acrylate group, and one hydrogen bonding group or one (meth)acrylate group, and (C) 0.01 to 5 parts by mass of an organic peroxide.

Abstract: A propylene polymer composition comprising a propylene polymer and an ethylene-?-olefin copolymer (provided that the ethylene-?-olefin copolymer is not the propylene polymer), the propylene polymer composition satisfying requirement (I): Requirement (I) an absolute value of a difference between a die swell ratio at a shear rate of 24 sec?1 and a die swell ratio at a shear rate of 6,080 sec?1 is 0.29 or less. One embodiment of the present invention is a propylene polymer composition which additionally satisfies the requirement (II). Requirement (II): The ethylene triad chains (EEE) in an ortho-dichlorobenzene-insoluble fraction are 2.0 mol % or more.

Abstract: A propylene-based polymer composition having good thermal stability and yielding a molded product have a favorable appearance is provided. The composition contains a propylene-based polymer (A) selected from a propylene homopolymer (A-1) and a heterophasic propylene-based polymer (A-2), carbon black (D), and optionally ethylene-?-olefin copolymer (B). The content of (D) is 0.001 to 1.7 parts by weight with respect to 100 parts by weight of (A). The primary particle size of the carbon black is 15 nm to 39 nm, and x defined by the following formula (1) is 1 to 430. x=a×S??(1) In formula (1), a is the concentration (unit: atom %) of oxygen double-bonded to carbon on the surface of the carbon black, and S is the nitrogen adsorption specific surface area (unit: m2/g) of the carbon black.

Abstract: A propylene-based polymer composition having good thermal stability and yielding a molded product have a favorable appearance is provided. The composition contains a propylene-based polymer (A) selected from a propylene homopolymer (A-1) and a heterophasic propylene-based polymer (A-2), carbon black (D), and optionally ethylene-?-olefin copolymer (B). The content of (D) is 0.001 to 1.7 parts by weight with respect to 100 parts by weight of (A). The primary particle size of the carbon black is 15 nm to 39 nm, and x defined by the following formula (1) is 1 to 430. x=a×S??(1) In formula (1), a is the concentration (unit: atom %) of oxygen double-bonded to carbon on the surface of the carbon black, and S is the nitrogen adsorption specific surface area (unit: m2/g) of the carbon black.

Abstract: Disclosed is a surface emitting laser element capable of reducing threshold current. A surface emitting laser element according to an embodiment includes a semiconductor portion having a first semiconductor layer and a second semiconductor layer, a first reflector disposed at the first semiconductor layer side of the semiconductor portion, and a second reflector disposed at the second semiconductor layer side of the semiconductor portion. Particularly includes a second electrode disposed between the second semiconductor layer and the second reflector and connected to the second semiconductor layer, a connecting electrode disposed laterally around the second reflector and connected to the second electrode, and a current confinement portion disposed between the second semiconductor layer and the connecting electrode and capable of reflecting light from the semiconductor portion.

Abstract: A nitride semiconductor laser device includes: a stack, the stack including an n-type layer and a p-type layer each including a nitride semiconductor; an n-electrode electrically coupled to the n-type layer; a p-electrode electrically coupled to the p-type layer; and a thermally conductive portion disposed in contact with the p-type layer in a region which is different from the region where the p-electrode is connected, wherein the thermally conductive portion is electrically insulated from the p-electrode. Manufacturing steps specific to nitride semiconductors are employed to form the device. An optical apparatus, such as an optical disc device, a display device, or a lighting device includes such a nitride laser device and depends its functions thereto.

Abstract: In a first platen gap, a light emitting amount is decided to obtain a light receiving amount for inspection as a first light emitting amount for inspection. Subsequently, in a second platen gap, a light emitting amount is decided to obtain a light receiving amount for inspection as a second light emitting amount for inspection. An inspection on dot forming is performed, using a smaller light emitting amount for inspection between the first and second light emitting amounts for inspection, and using the platen gap in which the smaller light emitting amount for inspection is decided.

Abstract: Disclosed is a surface emitting laser element capable of reducing threshold current. A surface emitting laser element according to an embodiment includes a semiconductor portion having a first semiconductor layer and a second semiconductor layer, a first reflector disposed at the first semiconductor layer side of the semiconductor portion, and a second reflector disposed at the second semiconductor layer side of the semiconductor portion. Particularly includes a second electrode disposed between the second semiconductor layer and the second reflector and connected to the second semiconductor layer, a connecting electrode disposed laterally around the second reflector and connected to the second electrode, and a current confinement portion disposed between the second semiconductor layer and the connecting electrode and capable of reflecting light from the semiconductor portion.

Abstract: A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body.

Abstract: A nitride semiconductor laser device includes: a stack, the stack including an n-type layer and a p-type layer each including a nitride semiconductor; an n-electrode electrically coupled to the n-type layer; a p-electrode electrically coupled to the p-type layer; and a thermally conductive portion disposed in contact with the p-type layer in a region which is different from the region where the p-electrode is connected, wherein the thermally conductive portion is electrically insulated from the p-electrode. Manufacturing steps specific to nitride semiconductors are employed to form the device. An optical apparatus, such as an optical disc device, a display device, or a lighting device includes such a nitride laser device and depends its functions thereto.

Abstract: A method of manufacturing a nitride semiconductor light emitting element includes: forming a stacked layer body of a nitride semiconductor having a second conductive-type layer, a light emitting layer, and a first conductive-type layer stacked on a growth substrate in this order; forming a first Bragg reflector made of a dielectric multilayer film above the first conductive-type layer; forming a first electrode over the first Bragg reflector with the first electrode being electrically connected to the first conductive-type layer; bonding the stacked layer body to a supporting substrate via the first Bragg reflector and the first electrode; removing the growth substrate from the stacked layer body to expose the second conductive-type layer; and forming over the exposed second conductive-type layer a second electrode and a second Bragg reflector made of a dielectric multilayer film so that the second Bragg reflector faces the first Bragg reflector across the stacked layer body.