Abstract: An integrated circuit design implementation system includes a die-to-die (D2D) complier configured to receive a configuration of a semiconductor package. The semiconductor package includes a first semiconductor die and a second semiconductor die bonded to each other. The D2D compiler is configured to generate, based on the configuration of the semiconductor package, a first bump map and a second bump map for the first semiconductor die and the second semiconductor die, respectively. The first bump map indicates respective locations of a plurality of first bump structures of the first semiconductor die, and the second bump map indicates respective locations of a plurality of second bump structures of the second semiconductor die.

Abstract: The present invention pertains to a method for producing terephthalic acid in an eco-friendly manner using waste polyester. Specifically, according to an embodiment of the present invention, the method for producing terephthalic acid comprises the steps of: (1) subjecting waste polyester to alcoholysis using a C4 or higher alcohol to produce a liquid composition containing a compound represented by formula 1; and (2) subjecting the liquid composition to hydrolysis, and thus can produce terephthalic acid in an eco-friendly manner, as well as improve processability and reduce process costs.

Abstract: A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.

Abstract: In a method of fabricating an electronic device, a first nMOS device structure and a second nMOS device structure are formed. Each nMOS device structure includes a gate oxide disposed on a p-type base material and a gate disposed on the gate oxide. N-type dopant implantation is performed to form source and drain regions in the p-type substate of the first nMOS device structure and source and drain regions in the p-type substate of the second nMOS device structure, and to further dope the gate of the first nMOS device structure n-type to form a first nMOS device with the gate doped n-type. P-type dopant implantation is performed to dope the gate of the second nMOS device structure p-type to form the second nMOS device structure with the gate anti-doped p-type.

Abstract: A substrate processing apparatus is provided and includes: a support unit including a spin chuck and a centering jig that is on the spin chuck, the spin chuck configured to support and rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a swing arm including a correction unit that includes a sensor and an emitter, the swing arm configured to move such that the correction unit moves to a target point on the substrate, and the emitter configured to irradiate a beam towards the substrate; and a controller configured to: control the spin chuck and the swing arm; and determine whether a movement trajectory of the swing arm is aligned with a rotation center of the spin chuck based on information acquired by the sensor about the centering jig.

Abstract: The present invention relates to a sagger for firing a precursor material, and more specifically, to a sagger having a space internally provided to load a precursor material. When used to fire a precursor material, the sagger is capable of not only suppressing the generation of by-products but also enhancing the durability of the main body.

Abstract: The present invention relates to a method for preparing terephthalic acid, and terephthalic acid prepared therefrom. Specifically, according to one embodiment of the present invention, by including the step of hydrolyzing a compound prepared by depolymerizing a waste polyester using a specific hydrolysis catalyst, terephthalic acid can be prepared in an environmentally friendly manner, and high purity terephthalic acid can be provided.

Abstract: The present invention relate to: an ovarian anti-aging pharmaceutical composition comprising, as an active ingredient, a compound of chemical formula 1 or a pharmaceutically acceptable salt thereof; an ovarian anti-aging method comprising same; and a pharmaceutical composition for preventing or treating diseases related to ovarian aging or dysfunction, wherein the compound of chemical formula 1 may exhibit the effects of restoring ovarian function and inhibiting ovarian aging, and may be effectively used for preventing or treating diseases related to ovarian aging or dysfunction.

Abstract: A herd behavior pattern analysis apparatus of video-based herd objects includes a data transmission/reception module; a memory that stores a herd pattern analysis program of the video-based herd objects; and a processor that executes the program stored in the memory, in which the program performs video pre-processing to detect an edge image of the herd object based on an input video captured through at least one camera allocated to a space where the herd objects are accommodated, and inputs the edge image into a herd pattern analysis model to detect pattern information of the herd object and to determine whether the herd object is normal based on the pattern information, and the herd pattern analysis model is a model learned using learning data including the edge image of each herd object, and outputs pattern information of the herd object based on the input video.

Abstract: A super resolution device and method are provided. The device comprises an input interface and a sharing layer calculator group. An image and a scaling signal are received by the input interface, wherein the scaling signal is configured to indicate to perform a double scaling operation or a quadruple scaling operation to the image. When the scaling signal indicates to perform the quadruple scaling operation, the sharing layer calculator group performs a plurality of convolution operations based on a first number of input channels and a first number of output channels. When the scaling signal indicates to perform the double scaling operation, the sharing layer calculator group performs the convolution operations based on a second number of input channels and a second number of output channels.

Abstract: An electronic package is provided and includes: a thermally conductive chip; a circuit structure having a circuit layer; and an electronic component disposed between the circuit structure and the thermally conductive chip and electrically connected to the circuit layer, so as to dissipate the heat generated during the operation of the electronic component via the thermally conductive chip. A method of manufacturing the electronic package is further provided.

Abstract: A method for increasing calcium absorption includes administering to a subject in need thereof a composition which contains a culture of Lactobacillus plantarum PL-02. The Lactobacillus plantarum PL-02 is deposited at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 20485 in accordance with the Budapest Treaty.

Abstract: A method for increasing calcium absorption includes administering to a subject in need thereof a composition containing a culture of Lactobacillus rhamnosus MP108. The Lactobacillus rhamnosus MP108 is deposited under the terms of the Budapest Treaty at the China General Microbiological Culture Collection Center (CGMCC) under an accession number CGMCC 21225.

Abstract: Provided is a control device and a substrate processing apparatus including the same. The substrate processing apparatus includes a support unit configured to support and rotate a first substrate, the support unit including a spin chuck, a spray unit configured to spray a processing fluid on the first substrate, a correction unit on a swing arm and configured to irradiate a beam onto the first substrate when the processing fluid is provided on the first substrate, wherein the swing arm is adjacent to the spin chuck and is configured to move the correction unit to a target point on the first substrate, and a controller configured to control the spin chuck and the swing arm, and correct a position error of the swing arm using a second substrate, wherein a plurality of anchor patterns are on the second substrate.

Abstract: An electrical connector assembly includes an electrical connector having a card slot and plural terminals extending into the card slot; and a heat dissipation module having a fixing plate at one end thereof, the fixing plate having a notch; wherein the electrical connector has a supporting surface for supporting the fixing plate and a fixing member for mating with the notch, the fixing member includes a spherical or hemispherical head portion for guiding the fixing plate at multiple angles.

Abstract: A semiconductor device includes a first oxide layer and a gate structure. The first oxide layer is disposed on a substrate. The gate structure is disposed on the first oxide layer. The gate structure includes a gate and a spacer surrounding the gate. The first oxide layer includes an exposed segment not covered by the gate structure. A thickness of the first oxide layer right below the gate is fixed, and the thickness of the first oxide layer right below the gate is greater than a thickness of the exposed segment.

Abstract: A cable assembly, configured to be mounted to a circuit board having a first conductive pad and a second conductive pad, includes a first cable, a second cable and a support member. The first cable includes a first core, a first insulator and a first shielding layer. The second cable includes a second core, a second insulator and a second shielding layer. The first core and the second core are configured to be in contact with the first conductive pad and the second conductive pad. The support member includes a support portion. The support portion is configured to support the first insulator and the second insulator. The connection portion is in contact with the first shielding layer and the second shielding layer. A cable connector having the cable assembly is also disclosed.

Abstract: A gait evaluating system including a processor is provided. The processor identifies whether a gait type of the user belongs to a normal gait, a non-neuropathic gait or a neuropathic gait based on step feature values of a user and walking limb feature values of the user. In response to that the gait type of the user belongs to the non-neuropathic gait, the processor controls the display panel to display a first auxiliary information, a second auxiliary information, and a third auxiliary information. The first auxiliary information indicates a potential sarcopenia of the user. The second auxiliary information indicates a dietary guideline for muscle building and muscle strengthening. The third auxiliary information shows a motion instruction video for regaining or maintaining muscle strength of the user.

Abstract: A control device and a substrate processing apparatus including the same are provided. The substrate processing apparatus includes: a support unit including a spin head and configured to support and to rotate a substrate; a spraying unit configured to spray processing liquid onto the substrate; a correction unit in a swing arm, the correction unit configured to move to a target point on the substrate and to irradiate a beam when the processing liquid is sprayed onto the substrate; and a control unit configured to calculate the target point, wherein the control unit is configured to convert image coordinates associated with a first coordinate system and then to calculate the target point by converting the image coordinates associated with the first coordinate system into image coordinates associated with a second coordinate system, and the second coordinate system is based on rotation angles of the spin head and the swing arm.

Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.