Abstract: A display device is capable of realizing low power consumption since a first thin-film transistor having a polycrystalline semiconductor layer and a second thin-film transistor having an oxide semiconductor layer are disposed in an active area. In addition, an opening formed in a bending area is formed to have the same depth as at least one of a plurality of contact holes formed in at least one inorganic insulation layer, which is disposed in the active area, and source and drain electrodes of the second thin-film transistor and source and drain electrodes of the first thin-film transistor, which are disposed below the oxide semiconductor layer, are formed in the same plane using the same material, which simplifies the manufacturing process of the display device.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: Disclosed is a display device that is capable of realizing low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, thereby realizing low power consumption, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified.

Abstract: A display device is capable of realizing low power consumption since a first thin-film transistor having a polycrystalline semiconductor layer and a second thin-film transistor having an oxide semiconductor layer are disposed in an active area. In addition, an opening formed in a bending area is formed to have the same depth as at least one of a plurality of contact holes formed in at least one inorganic insulation layer, which is disposed in the active area, and source and drain electrodes of the second thin-film transistor and source and drain electrodes of the first thin-film transistor, which are disposed below the oxide semiconductor layer, are formed in the same plane using the same material, which simplifies the manufacturing process of the display device.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.

Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: A flexible display includes a flexible substrate that includes an active area, a pad area extending from the active area, and a bend allowance section extending from the pad area. A first buffer layer is disposed on the flexible substrate and includes at least three layers. A first insulation layer is disposed on the first buffer layer in the pad area, a gate line is disposed on the first insulation layer and extends from the active area to the pad area, a second insulation layer is disposed on the gate line in the pad area, a connection line is electrically connected to the gate line, and a second buffer layer covers the connection line. A top layer among the at least three layers of the first buffer layer is disposed in the active area and the pad area, a lower layer which is in contact with the top layer extends to the bend allowance section and a thickness of the lower layer bend allowance section is less than a thickness of the lower layer in the other areas.

Abstract: A flexible display includes a flexible substrate that includes an active area, a pad area extending from the active area, and a bend allowance section extending from the pad area. A first buffer layer is disposed on the flexible substrate and includes at least three layers. A first insulation layer is disposed on the first buffer layer in the pad area, a gate line is disposed on the first insulation layer and extends from the active area to the pad area, a second insulation layer is disposed on the gate line in the pad area, a connection line is electrically connected to the gate line, and a second buffer layer covers the connection line. A top layer among the at least three layers of the first buffer layer is disposed in the active area and the pad area, a lower layer which is in contact with the top layer extends to the bend allowance section and a thickness of the lower layer bend allowance section is less than a thickness of the lower layer in the other areas.

Abstract: A liquid crystal display device and a method for manufacturing the same, are discussed. The liquid crystal display device includes first and second substrates each having an active area and a non-active area, gate lines and data lines formed on the active area of the first substrate to define a plurality of pixel areas, thin film transistors formed at intersections of the gate and data lines, pixel electrodes, a common electrode formed over the second substrate, a conductive seal pattern between the first and second substrates, a common line pattern formed on the first substrate to correspond to the conductive seal pattern, and a transparent electrode pattern overlapping the common line pattern with an insulating layer interposed therebetween, the transparent electrode pattern having a width equal to or less than that of the common line pattern.

Abstract: A liquid crystal display has a pad structure. The pad structure includes at least one pad formed on a substrate, an insulating film formed on the pad, and at least one conductive layer connected to the pad through contact holes defined through the insulating film. The insulating film covers side surfaces of the pad and a portion of the substrate adjacent to the side surfaces of the pad.

Abstract: A liquid crystal display device includes first and second substrates facing each other; gate lines and data lines formed on the first substrate such that the gate lines and the data lines intersect each other to define pixel regions; thin film transistors formed at respective intersections of the gate lines and the data lines; a black matrix layer formed on the second substrate such that the black matrix layer corresponds to a region other than the pixel regions; color filter layers extending in an extension direction of the data lines in respective pixel regions; a liquid crystal layer interposed between the first and second substrates; first column spacers formed on one of the first and second substrates such that each first column spacer corresponds to an associated one of the gate lines or to a channel region of an associated one of the thin film transistors to maintain a cell gap between the first and second substrate; and spacer patterns formed on one of the first and second substrates such that each sp

Abstract: A liquid crystal display device includes first and second substrates facing each other; gate lines and data lines formed on the first substrate such that the gate lines and the data lines intersect each other to define pixel regions; thin film transistors formed at respective intersections of the gate lines and the data lines; a black matrix layer formed on the second substrate such that the black matrix layer corresponds to a region other than the pixel regions; color filter layers extending in an extension direction of the data lines in respective pixel regions; a liquid crystal layer interposed between the first and second substrates; first column spacers formed on one of the first and second substrates such that each first column spacer corresponds to an associated one. of the gate lines or to a channel region of an associated one of the thin film transistors.

Abstract: A liquid crystal display has a pad structure. The pad structure includes at least one pad formed on a substrate, an insulating film formed on the pad, and at least one conductive layer connected to the pad through contact holes defined through the insulating film. The insulating film covers side surfaces of the pad and a portion of the substrate adjacent to the side surfaces of the pad.

Abstract: A liquid crystal display device and a method for manufacturing the same, are discussed. The liquid crystal display device includes first and second substrates each having an active area and a non-active area, gate lines and data lines formed on the active area of the first substrate to define a plurality of pixel areas, thin film transistors formed at intersections of the gate and data lines, pixel electrodes, a common electrode formed over the second substrate, a conductive seal pattern between the first and second substrates, a common line pattern formed on the first substrate to correspond to the conductive seal pattern, and a transparent electrode pattern overlapping the common line pattern with an insulating layer interposed therebetween, the transparent electrode pattern having a width equal to or less than that of the common line pattern.

Abstract: A liquid crystal display has a pad structure. The pad structure includes at least one pad formed on a substrate, an insulating film formed on the pad, and at least one conductive layer connected to the pad through contact holes defined through the insulating film. The insulating film covers side surfaces of the pad and a portion of the substrate adjacent to the side surfaces of the pad.