Patents by Inventor Yu-Ho Jung
Yu-Ho Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220344626Abstract: Disclosed is a display device that is capable of realizing low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, thereby realizing low power consumption, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified.Type: ApplicationFiled: July 11, 2022Publication date: October 27, 2022Inventors: Kyoung-Nam LIM, Yu-Ho JUNG, Dong-Young KIM
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Patent number: 11430848Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.Type: GrantFiled: August 27, 2020Date of Patent: August 30, 2022Assignee: LG Display Co., Ltd.Inventors: Dong-Young Kim, Kyoung-Nam Lim, Yu-Ho Jung
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Publication number: 20220262884Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.Type: ApplicationFiled: May 3, 2022Publication date: August 18, 2022Inventors: Dong-Young KIM, Kyoung-Nam LIM, Yu-Ho JUNG
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Patent number: 11417867Abstract: Disclosed is a display device that is capable of realizing low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, thereby realizing low power consumption, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified.Type: GrantFiled: November 30, 2018Date of Patent: August 16, 2022Assignee: LG Display Co., Ltd.Inventors: Kyoung-Nam Lim, Yu-Ho Jung, Dong-Young Kim
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Publication number: 20210225978Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.Type: ApplicationFiled: April 9, 2021Publication date: July 22, 2021Inventors: Kyoung-Nam LIM, Yu-Ho JUNG, Dong-Young KIM
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Patent number: 11004923Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.Type: GrantFiled: November 30, 2018Date of Patent: May 11, 2021Assignee: LG Display Co., Ltd.Inventors: Kyoung-Nam Lim, Yu-Ho Jung, Dong-Young Kim
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Publication number: 20210104591Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.Type: ApplicationFiled: December 17, 2020Publication date: April 8, 2021Inventors: Kyoung-Nam LIM, Yu-Ho JUNG, Dong-Young KIM
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Patent number: 10930722Abstract: A display device is capable of realizing low power consumption since a first thin-film transistor having a polycrystalline semiconductor layer and a second thin-film transistor having an oxide semiconductor layer are disposed in an active area. In addition, an opening formed in a bending area is formed to have the same depth as at least one of a plurality of contact holes formed in at least one inorganic insulation layer, which is disposed in the active area, and source and drain electrodes of the second thin-film transistor and source and drain electrodes of the first thin-film transistor, which are disposed below the oxide semiconductor layer, are formed in the same plane using the same material, which simplifies the manufacturing process of the display device.Type: GrantFiled: November 30, 2018Date of Patent: February 23, 2021Assignee: LG Display Co., Ltd.Inventors: Dong-Young Kim, Kyoung-Nam Lim, Yu-Ho Jung
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Patent number: 10903296Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.Type: GrantFiled: February 28, 2020Date of Patent: January 26, 2021Assignee: LG Display Co., Ltd.Inventors: Kyoung-Nam Lim, Yu-Ho Jung, Dong-Young Kim
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Publication number: 20200395427Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.Type: ApplicationFiled: August 27, 2020Publication date: December 17, 2020Inventors: Dong-Young KIM, Kyoung-Nam LIM, Yu-Ho JUNG
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Patent number: 10847593Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.Type: GrantFiled: December 5, 2018Date of Patent: November 24, 2020Assignee: LG Display Co., Ltd.Inventors: Dong-Young Kim, Kyoung-Nam Lim, Yu-Ho Jung
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Publication number: 20200203457Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.Type: ApplicationFiled: February 28, 2020Publication date: June 25, 2020Inventors: Kyoung-Nam LIM, Yu-Ho JUNG, Dong-Young KIM
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Patent number: 10615236Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.Type: GrantFiled: December 5, 2018Date of Patent: April 7, 2020Assignee: LG Display Co., Ltd.Inventors: Kyoung-Nam Lim, Yu-Ho Jung, Dong-Young Kim
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Publication number: 20190189975Abstract: Disclosed is a display device that is capable of realizing low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, thereby realizing low power consumption, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified.Type: ApplicationFiled: November 30, 2018Publication date: June 20, 2019Inventors: Kyoung-Nam LIM, Yu-Ho JUNG, Dong-Young KIM
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Publication number: 20190189723Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. A second source electrode of the second thin-film transistor and a second gate electrode of the second thin-film transistor overlap each other with an upper interlayer insulation film interposed therebetween so as to form a first storage capacitor.Type: ApplicationFiled: December 5, 2018Publication date: June 20, 2019Inventors: Dong-Young KIM, Kyoung-Nam LIM, Yu-Ho JUNG
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Publication number: 20190189722Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.Type: ApplicationFiled: December 5, 2018Publication date: June 20, 2019Inventors: Kyoung-Nam LIM, Yu-Ho JUNG, Dong-Young KIM
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Publication number: 20190189721Abstract: A display device is capable of realizing low power consumption since a first thin-film transistor having a polycrystalline semiconductor layer and a second thin-film transistor having an oxide semiconductor layer are disposed in an active area. In addition, an opening formed in a bending area is formed to have the same depth as at least one of a plurality of contact holes formed in at least one inorganic insulation layer, which is disposed in the active area, and source and drain electrodes of the second thin-film transistor and source and drain electrodes of the first thin-film transistor, which are disposed below the oxide semiconductor layer, are formed in the same plane using the same material, which simplifies the manufacturing process of the display device.Type: ApplicationFiled: November 30, 2018Publication date: June 20, 2019Inventors: Dong-Young KIM, Kyoung-Nam LIM, Yu-Ho JUNG
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Publication number: 20190189720Abstract: Disclosed is a display device that is capable of being driven with low power consumption. A first thin-film transistor including a polycrystalline semiconductor layer and a second thin-film transistor including an oxide semiconductor layer are disposed in an active area, thereby reducing power consumption. At least one opening formed in a bending area is formed to have the same depth as any one of contact holes formed in the active area, thereby making it possible to form the opening and the contact holes through the same process and consequently simplifying the process of manufacturing the device. Since a high potential supply line and a low potential supply line overlap each other with a protective film formed of an inorganic insulation material interposed therebetween, short-circuiting of the high potential supply line and the low potential supply line may be prevented.Type: ApplicationFiled: November 30, 2018Publication date: June 20, 2019Inventors: Kyoung-Nam LIM, Yu-Ho JUNG, Dong-Young KIM
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Patent number: 10230063Abstract: A flexible display includes a flexible substrate that includes an active area, a pad area extending from the active area, and a bend allowance section extending from the pad area. A first buffer layer is disposed on the flexible substrate and includes at least three layers. A first insulation layer is disposed on the first buffer layer in the pad area, a gate line is disposed on the first insulation layer and extends from the active area to the pad area, a second insulation layer is disposed on the gate line in the pad area, a connection line is electrically connected to the gate line, and a second buffer layer covers the connection line. A top layer among the at least three layers of the first buffer layer is disposed in the active area and the pad area, a lower layer which is in contact with the top layer extends to the bend allowance section and a thickness of the lower layer bend allowance section is less than a thickness of the lower layer in the other areas.Type: GrantFiled: July 26, 2017Date of Patent: March 12, 2019Assignee: LG Display Co., Ltd.Inventors: Yi Sik Jang, Yu Ho Jung, Young Seok Choi
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Publication number: 20180033979Abstract: A flexible display includes a flexible substrate that includes an active area, a pad area extending from the active area, and a bend allowance section extending from the pad area. A first buffer layer is disposed on the flexible substrate and includes at least three layers. A first insulation layer is disposed on the first buffer layer in the pad area, a gate line is disposed on the first insulation layer and extends from the active area to the pad area, a second insulation layer is disposed on the gate line in the pad area, a connection line is electrically connected to the gate line, and a second buffer layer covers the connection line. A top layer among the at least three layers of the first buffer layer is disposed in the active area and the pad area, a lower layer which is in contact with the top layer extends to the bend allowance section and a thickness of the lower layer bend allowance section is less than a thickness of the lower layer in the other areas.Type: ApplicationFiled: July 26, 2017Publication date: February 1, 2018Inventors: Yi Sik JANG, Yu Ho JUNG, Young Seok CHOI