Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.

Abstract: A multilayer electronic component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween; and an external electrode disposed on the body and connected to the internal electrodes. One of the internal electrodes includes Ni, and a lattice constant of Ni included in the one of the internal electrodes satisfies a range of 3.53 ? to 3.72 ?.

Abstract: A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers and external electrodes disposed on the body and connected to the internal electrodes. The one of the internal electrodes includes Ni, Ba, Ti, O, and Tb, and a content of Tb relative to a sum of contents of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt %.

Abstract: A multilayer electric component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween and external electrodes disposed on the body and connected to the internal electrodes, wherein the internal electrodes include Cu and Ni and a coefficient of variation (CV) value of Cu/Ni (percent by weight) in a region thereof, 5 nm deep from an interface with the dielectric layer is 25.0% or less.

Abstract: A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers and external electrodes disposed on the body and connected to the internal electrodes. The one of the internal electrodes includes Ni, Ba, Ti, O, and Tb, and a content of Tb relative to a sum of contents of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt %.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately stacked therein in a stacking direction; and an external electrode disposed on the body and connected to the internal electrode. The internal electrode includes 94.0 to 99.6 wt % of Ni and 0.4 to 6.0 wt % of Cu.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer interposed therebetween in a first direction; and an external electrode disposed on the body and connected to the internal electrode, wherein 0.46 to 1.08 at% is a range of an indium (In) content compared to nickel (Ni) and indium (In) contents in a surface layer portion of the internal electrode.

Abstract: A multilayer ceramic electronic component includes a body including a dielectric layer and an internal electrode alternately disposed with the dielectric layer in a first direction; and an external electrode disposed on the body and connected to the internal electrode, wherein the internal electrode includes a plurality of Ni crystal grains, and a composite layer including Ni and In is provided at a grain boundary of each of the plurality of Ni crystal grains.

Abstract: A multilayer electric component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween and external electrodes disposed on the body and connected to the internal electrodes, wherein the internal electrodes include Cu and Ni and a coefficient of variation (CV) value of Cu/Ni (percent by weight) in a region thereof, 5 nm deep from an interface with the dielectric layer is 25.0% or less.

Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.

Abstract: A multilayer electronic component includes a body in which internal electrodes including Ni and Sn and dielectric layers are alternately disposed, and external electrodes disposed on a surface of the body, connected to the internal electrodes, and including Cu and Sn, wherein the internal electrodes include an alloy including Ni, Cu, and Sn in a region in contact with the external electrodes, and Sn in an amount that satisfies the following formula: 1<C2/C1<13.5 in which C1 is the content of Sn of the internal electrodes at a central portion of the body and C2 is the content of Sn of the internal electrodes at a point 2 ?m away from a point at which the internal electrode and the external electrode are in contact with each other in an inward direction of the body.

Abstract: A multilayer electronic component includes a body including dielectric layers and internal electrodes alternately disposed with the dielectric layers and external electrodes disposed on the body and connected to the internal electrodes. The one of the internal electrodes includes Ni, Ba, Ti, O, and Tb, and a content of Tb relative to a sum of contents of Ni, Ba, Ti, O, and Tb is 0.45 to 3.0 wt %.

Abstract: A multilayer electronic component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween; and an external electrode disposed on the body and connected to the internal electrodes. One of the internal electrodes includes Ni, and a lattice constant of Ni included in the one of the internal electrodes satisfies a range of 3.53 ? to 3.72 ?.

Abstract: A multilayer electric component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween and external electrodes disposed on the body and connected to the internal electrodes, wherein the internal electrodes include Cu and Ni and a coefficient of variation (CV) value of Cu/Ni (percent by weight) in a region thereof, 5 nm deep from an interface with the dielectric layer is 25.0% or less.

Abstract: A multilayer electronic component includes a body in which internal electrodes including Ni and Sn and dielectric layers are alternately disposed, and external electrodes disposed on a surface of the body, connected to the internal electrodes, and including Cu and Sn, wherein the internal electrodes include an alloy including Ni, Cu, and Sn in a region in contact with the external electrodes, and Sn in an amount that satisfies the following formula: 1<C2/C1<13.5 in which C1 is the content of Sn of the internal electrodes at a central portion of the body and C2 is the content of Sn of the internal electrodes at a point 2 ?m away from a point at which the internal electrode and the external electrode are in contact with each other in an inward direction of the body.

Abstract: A multilayer electronic component includes a body including a dielectric layer and an internal electrode alternately stacked therein in a stacking direction; and an external electrode disposed on the body and connected to the internal electrode. The internal electrode includes 94.0 to 99.6 wt % of Ni and 0.4 to 6.0 wt % of Cu.

Abstract: A printed circuit board according to the present invention includes at least one insulating layer and an interconnection. The insulating layer includes a first depression at an interface with the interconnection, and a second depression at a surface of the first depression.