Patents by Inventor Yu-Hong Pan
Yu-Hong Pan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240021548Abstract: A semiconductor device and method of manufacturing that includes a first etch stop layer and a second etch stop layer to prevent delamination and damage to underlying components. A first passivation layer and a second passivation layer are disposed on a substrate, with a metal pad exposed through the passivation layers and contacting a top metal component of the substrate. The first etch stop layer is then formed on the second passivation layer and the metal pad. A third passivation layer is then formed on the substrate with an opening to the metal pad, which is covered by the first etch stop layer. The second etch stop layer is then formed on the third passivation layer and in the opening on the second etch stop layer. A bottom metal film/conductive component is then formed on the second etch stop layer, photoresist is applied, and wet etching is performed. The metal pad is protected from damage caused by delamination of the second etch stop layer by the first etch stop layer.Type: ApplicationFiled: July 13, 2022Publication date: January 18, 2024Inventors: Wei-Chun Liao, Guo-Zhou Huang, Huan-Kuan Su, Yu-Hong Pan, Wen Han Hung, Ling-Sung Wang
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Patent number: 10686030Abstract: A plurality of openings is formed in a dielectric layer formed on a semiconductor substrate. The plurality of openings comprises a first opening extending to the semiconductor substrate, a second opening extending to a first depth that is substantially less than a thickness of the dielectric layer, and a third opening extending to a second depth that is substantially greater than the first depth. A multi-layer gate electrode is formed in the first opening. A thin resistor structure is formed in the second opening, and a connection structure is formed in the third opening, by filling the second and third openings substantially simultaneously with a resistor metal.Type: GrantFiled: September 18, 2017Date of Patent: June 16, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiu-Jung Yen, Jen-Pan Wang, Yu-Hong Pan, Chih-Fu Chang
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Patent number: 10256233Abstract: A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.Type: GrantFiled: January 30, 2018Date of Patent: April 9, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Huan-Kuan Su, Yu-Hong Pan, Jen-Pan Wang, Tong-Min Weng, Tsung-Han Wu
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Publication number: 20180342502Abstract: A method for forming a semiconductor device and the resulting device are provided. At least one capacitor in a first gate structure is formed over a substrate. The at least one capacitor includes a first gate electrode including a first conductive layer, a semiconductor layer including a semiconductor material and a dopant, a dielectric layer disposed between the first gate electrode and the semiconductor layer, and a second conductive layer contacting the semiconductor layer. The at least one resistor includes a third conductive layer and is electrically connected to the at least one capacitor.Type: ApplicationFiled: January 30, 2018Publication date: November 29, 2018Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Huan-Kuan Su, Yu-Hong Pan, Jen-Pan Wang, Tong-Min Weng, Tsung-Han Wu
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Publication number: 20180026091Abstract: A plurality of openings is formed in a dielectric layer formed on a semiconductor substrate. The plurality of openings comprises a first opening extending to the semiconductor substrate, a second opening extending to a first depth that is substantially less than a thickness of the dielectric layer, and a third opening extending to a second depth that is substantially greater than the first depth. A multi-layer gate electrode is formed in the first opening. A thin resistor structure is formed in the second opening, and a connection structure is formed in the third opening, by filling the second and third openings substantially simultaneously with a resistor metal.Type: ApplicationFiled: September 18, 2017Publication date: January 25, 2018Inventors: Hsiu-Jung Yen, Jen-Pan Wang, Yu-Hong Pan, Chih-Fu Chang
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Patent number: 9768243Abstract: A plurality of openings is formed in a dielectric layer formed on a semiconductor substrate. The plurality of openings comprises a first opening extending to the semiconductor substrate, a second opening extending to a first depth that is substantially less than a thickness of the dielectric layer, and a third opening extending to a second depth that is substantially greater than the first depth. A multi-layer gate electrode is formed in the first opening. A thin resistor structure is formed in the second opening, and a connection structure is formed in the third opening, by filling the second and third openings substantially simultaneously with a resistor metal.Type: GrantFiled: July 5, 2013Date of Patent: September 19, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hsiu-Jung Yen, Jen-Pan Wang, Yu-Hong Pan, Chih-Fu Chang
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Patent number: 9269761Abstract: An embodiment metal-insulator-metal (MiM) capacitor includes a gate stack disposed upon an insulation layer, the gate stack including a gate metal, the gate metal serving as a bottom electrode, a dielectric layer disposed upon the gate stack, and a top metal layer disposed upon the dielectric layer, the top metal serving as a top electrode.Type: GrantFiled: March 8, 2013Date of Patent: February 23, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hong Pan, Jen-Pan Wang
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Patent number: 8872248Abstract: An integrated circuit includes a semiconductor substrate, and an insulation region extending from a top surface of the semiconductor substrate into the semiconductor substrate. An Inter-Layer Dielectric (ILD) is overlying the insulation region. A capacitor includes a first capacitor plate including a first slot contact plug, and a second capacitor plate including a second slot contact plug. The first and the second contact plugs include portions in the ILD. A portion of the ILD between vertical surfaces of the first slot contact plug and the second slot contact plug acts as a capacitor insulator of the capacitor.Type: GrantFiled: February 22, 2013Date of Patent: October 28, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hong Pan, Jen-Pan Wang
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Publication number: 20140264753Abstract: A plurality of openings is formed in a dielectric layer formed on a semiconductor substrate. The plurality of openings comprises a first opening extending to the semiconductor substrate, a second opening extending to a first depth that is substantially less than a thickness of the dielectric layer, and a third opening extending to a second depth that is substantially greater than the first depth. A multi-layer gate electrode is formed in the first opening. A thin resistor structure is formed in the second opening, and a connection structure is formed in the third opening, by filling the second and third openings substantially simultaneously with a resistor metal.Type: ApplicationFiled: July 5, 2013Publication date: September 18, 2014Inventors: Hsiu-Jung Yen, Jen-Pan Wang, Yu-Hong Pan, Chih-Fu Chang
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Publication number: 20140252549Abstract: An embodiment metal-insulator-metal (MiM) capacitor includes a gate stack disposed upon an insulation layer, the gate stack including a gate metal, the gate metal serving as a bottom electrode, a dielectric layer disposed upon the gate stack, and a top metal layer disposed upon the dielectric layer, the top metal serving as a top electrode.Type: ApplicationFiled: March 8, 2013Publication date: September 11, 2014Inventors: Yu-Hong Pan, Jen-Pan Wang