Patents by Inventor Yu-Hsai Chen

Yu-Hsai Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low noise magneto-resistive sensor utilizing magnetic noise cancellation
    Patent number: 8031445
    Abstract: A magnetic sensor, formed from a pair of magnetically free layers located on opposing sides of a non-magnetic layer, and method for its manufacture, are described. Biasing these free layers to be roughly orthogonal to one another causes them to be magnetostatically coupled in a weak antiferromagnetic mode. This enables the low frequency noise spectra of the two free layers to cancel one another. Careful control of the SH/TW ratio is an important feature of the device.
    Type: Grant
    Filed: October 8, 2008
    Date of Patent: October 4, 2011
    Assignee: Headway Technologies, Inc.
    Inventors: Yuchen Zhou, Kunliang Zhang, Yu-Hsai Chen, Tong Zhao, Moris Dovek
  • Low noise magneto-resistive sensor utilizing magnetic noise cancellation
    Publication number: 20100085666
    Abstract: A magnetic sensor, formed from a pair of magnetically free layers located on opposing sides of a non-magnetic layer, and method for its manufacture, are described. Biasing these free layers to be roughly orthogonal to one another causes them to be magnetostatically coupled in a weak antiferromagnetic mode. This enables the low frequency noise spectra of the two free layers to cancel one another.
    Type: Application
    Filed: October 8, 2008
    Publication date: April 8, 2010
    Inventors: Yuchen Zhou, Kunliang Zhang, Yu-Hsai Chen, Tong Zhao, Moris Dovek