Abstract: A method of producing an improved field effect transistor integrated circuit device in a semiconductor substrate embodying a first type dopant and having a recessed gate electrode and self-aligned source and drain regions can be made. A first masking layer is formed on the surface of said semiconductor substrate that is capable of masking the underlying silicon against oxidation. Portions of first masking layer is removed to form openings that at least define the gate electrode regions. The resultant exposed silicon area are oxidized to produce a thick sunken silicon oxide layer. The first masking layer is removed. A second opposite type dopant is introduced into the substrate on opposite sides of the sunken thick oxide layer that defines the region of the gate electrode to form source and drain regions. The sunken thick oxide layer is selectively removed, thereby forming a depression in the substrate that defines the gate region.