Patents by Inventor Yu-Hsiang Chen

Yu-Hsiang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250238084
    Abstract: A method, system, apparatus, and/or device for moving or scrolling a virtual object in a virtual or augmented reality environment. The method, system, apparatus, and/or device may include: detecting, by a first sensor, a first gesture associated with selecting a first virtual object in an augmented reality environment displayed by a head-mounted display; displaying, by the head-mounted display, a first indicator indicating a selection of the first virtual object by a user; detecting, using the first sensor or a second sensor, a first movement of the head-mounted display associated with a first movement command; and in response to detecting the first movement of the head-mounted display, executing the first movement command, where the first movement command is a scrolling function to scroll text or a graphical object of the first virtual object or a movement function to move the text or the graphical object of the first virtual object.
    Type: Application
    Filed: September 4, 2024
    Publication date: July 24, 2025
    Inventors: Yu-Hsiang Chen, Soulaiman Itani
  • Patent number: 12347770
    Abstract: An interconnect structure according to the present disclosure includes a first dielectric layer, a first conductive feature and a second conductive feature in the first dielectric layer, a first dielectric feature disposed directly on the first conductive feature; a first etch stop layer (ESL) disposed over the first dielectric layer and the second conductive feature, a first conductive layer disposed on and in contact with the first dielectric feature, a second ESL disposed over the first conductive layer, a second dielectric layer disposed directly on the first ESL and the second ESL, a first via extending through the second dielectric layer and the second ESL to contact with the first conductive feature, and a second via extending through the second dielectric layer and the first ESL to contact with the second conductive feature.
    Type: Grant
    Filed: March 24, 2022
    Date of Patent: July 1, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Hsiang Chen, Wen-Sheh Huang, Po-Hsiang Huang, Hsiu-Wen Hsueh
  • Publication number: 20250210610
    Abstract: A package structure and a method for forming a package structure are provided. The package structure includes a chip-containing structure bonded to a redistribution structure through multiple first solder bumps. The package structure also includes a memory-containing structure bonded to an interposer chip. The interposer chip is bonded to the redistribution structure through multiple second solder bumps. The package structure further includes a substrate, and the redistribution structure is over the substrate.
    Type: Application
    Filed: April 25, 2024
    Publication date: June 26, 2025
    Inventors: Po-Yu Chen, Yu Hsiang Chen
  • Publication number: 20250099807
    Abstract: A resistance-adjustable self-power-generating treadmill includes a chassis; a power generator; a belt driving device including two rollers, a circulating running belt, and a power transmission unit; a controller electrically connected with the power generator; a battery electrically connected with the controller; a handlebar; and display and control unit, which is mounted on the handlebar to allow a user to watch messages and to control, through touching the display and control unit, the controller to adjust the power generation amount of the power generator. Through adjusting the power generation amount of the power generator, the resisting force that is applied from the power generator to the circulating running belt is also controllable.
    Type: Application
    Filed: September 25, 2023
    Publication date: March 27, 2025
    Inventor: Yu Hsiang Chen
  • Publication number: 20250096185
    Abstract: A semiconductor structure can include a first substrate having a frontside and a backside opposite the frontside. The semiconductor structure can include devices on the frontside. The semiconductor structure can include first interconnect structures on the frontside and coupled to the devices. The semiconductor structure can include a heat distribution layer on the frontside and electrically isolated from the first interconnect structures, where the heat distribution layer includes a thermally conductive material. The semiconductor structure can include a second substrate coupled to the first substrate on the frontside. The semiconductor structure can include second interconnect structures on the backside and coupled to the devices.
    Type: Application
    Filed: September 18, 2023
    Publication date: March 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po-Yu Chen, Cheng Hung Wu, Hui-Ling Lin, Yu Hsiang Chen
  • Publication number: 20250028396
    Abstract: A method, system, apparatus, and/or device for detecting pinch gestures in an augmented reality environment. The method, system, apparatus, and/or device may include: a wearable display, a sensor, and a processing device. The wearable display may be configured to attach to a head of a user and display an augmented reality environment to the user. The sensor may be configured to detect a position of a first digit of a hand of the user and detect a position of a second digit of the hand of the user. The processing device may be configured to: identify a first fingertip of the first digit; identify a second fingertip of the second digit; determine that the first fingertip and the second fingertip are in an open pinch position at a first point in time; and display a cursor at a midpoint between the first fingertip and the second fingertip.
    Type: Application
    Filed: March 1, 2024
    Publication date: January 23, 2025
    Inventors: Yu-Hsiang Chen, Neeraj Kulkami
  • Publication number: 20250004562
    Abstract: A method, system, apparatus, and/or device that may include a sensor configured to obtain position information of at least a portion of a hand in a space relative to a first axis and a second axis. The method, system, apparatus, and/or device may include a processing device configured to: determine that fingers and a thumb of the hand are located within the defined area based on the position information; determine a first position of the fingers and a second position of the thumb based on the position information; in response to the fingers being in a clenched position, generate hand position information that only includes position information of the thumb; and in response to the position information of the thumb indicated the thumb is extended and oriented in a first direction along a first axis or a second axis, execute a first instruction.
    Type: Application
    Filed: February 14, 2024
    Publication date: January 2, 2025
    Inventors: Ganesh Salvi, Neeraj Kulkarni, Yu-Hsiang Chen
  • Patent number: 12165947
    Abstract: A method includes forming a transistor over a front side of a substrate, in which the transistor comprises a channel region, a gate region over the channel region, and source/drain regions on opposite sides of the gate region; forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure includes a dielectric layer and conductive features; and bonding the front-side interconnect structure to a carrier substrate via a bonding layer, in which the bonding layer is between the front-side interconnect structure and the carrier substrate, and the bonding layer has a higher thermal conductivity than the dielectric layer of the front-side interconnect structure.
    Type: Grant
    Filed: March 30, 2021
    Date of Patent: December 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Sheh Huang, Yung-Shih Cheng, Jiing-Feng Yang, Yu-Hsiang Chen, Chii-Ping Chen
  • Publication number: 20240387365
    Abstract: a first dielectric layer, a first conductive feature and a second conductive feature in the first dielectric layer, a first dielectric feature disposed directly on the first conductive feature; a first etch stop layer (ESL) disposed over the first dielectric layer and the second conductive feature, a first conductive layer disposed on and in contact with the first dielectric feature, a second ESL disposed over the first conductive layer, a second dielectric layer disposed directly on the first ESL and the second ESL, a first via extending through the second dielectric layer and the second ESL to contact with the first conductive feature, and a second via extending through the second dielectric layer and the first ESL to contact with the second conductive feature.
    Type: Application
    Filed: July 25, 2024
    Publication date: November 21, 2024
    Inventors: Yu-Hsiang Chen, Wen-Sheh Huang, Po-Hsiang Huang, Hsiu-Wen Hsueh
  • Publication number: 20240371948
    Abstract: a transistor and an interconnect structure disposed over the transistor. The interconnect structure includes a first dielectric layer, a first conductive feature in the first dielectric layer, a first etch stop layer (ESL) disposed over the first dielectric layer and the first conductive feature, a dielectric feature disposed in the first ESL, an electrode disposed over the dielectric feature, and a second ESL disposed on the first ESL and the electrode.
    Type: Application
    Filed: July 10, 2024
    Publication date: November 7, 2024
    Inventors: Yu-Hsiang Chen, Po-Hsiang Huang, Wen-Sheh Huang, Hsing-Leo Tsai, Chia-En Huang
  • Publication number: 20240353931
    Abstract: A free space input standard is instantiated on a processor. Free space input is sensed and communicated to the processor. If the free space input satisfies the free space input standard, a touch screen input response is invoked in an operating system. The free space input may be sensed using continuous implicit, discrete implicit, active explicit, or passive explicit approaches. The touch screen input response may be invoked through communicating virtual touch screen input, a virtual input event, or a virtual command to or within the operating system. in this manner free space gestures may control existing touch screen interfaces and devices, without modifying those interfaces and devices directly to accept free space gestures.
    Type: Application
    Filed: December 1, 2023
    Publication date: October 24, 2024
    Inventors: Shashwat Kandadai, Nathan Abercrombie, Yu-Hsiang Chen, Sleiman Itani
  • Patent number: 12119262
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first dielectric layer and a first conductive feature and a second conductive feature surrounded by the first dielectric layer. The semiconductor device structure also includes a second dielectric layer over the first dielectric layer and a resistive element electrically connected to the first conductive feature. The second dielectric layer surrounds a portion of the resistive element. The semiconductor device structure further includes a conductive via electrically connected to the second conductive feature. The second dielectric layer surrounds a portion of the conductive via, and a contact area between the resistive element and the first conductive feature is wider than a contact area between the conductive via and the second conductive feature.
    Type: Grant
    Filed: June 12, 2023
    Date of Patent: October 15, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wen-Sheh Huang, Hsiu-Wen Hsueh, Yu-Hsiang Chen, Chii-Ping Chen
  • Patent number: 12086326
    Abstract: A method, system, apparatus, and/or device for moving or scrolling a virtual object in a virtual or augmented reality environment. The method, system, apparatus, and/or device may include: detecting, by a first sensor, a first gesture associated with selecting a first virtual object in an augmented reality environment displayed by a head-mounted display; displaying, by the head-mounted display, a first indicator indicating a selection of the first virtual object by a user; detecting, using the first sensor or a second sensor, a first movement of the head-mounted display associated with a first movement command; and in response to detecting the first movement of the head-mounted display, executing the first movement command, where the first movement command is a scrolling function to scroll text or a graphical object of the first virtual object or a movement function to move the text or the graphical object of the first virtual object.
    Type: Grant
    Filed: April 18, 2023
    Date of Patent: September 10, 2024
    Assignee: West Texas Technology Partners, LLC
    Inventors: Yu-Hsiang Chen, Soulaiman Itani
  • Patent number: 12068377
    Abstract: a transistor and an interconnect structure disposed over the transistor. The interconnect structure includes a first dielectric layer, a first conductive feature in the first dielectric layer, a first etch stop layer (ESL) disposed over the first dielectric layer and the first conductive feature, a dielectric feature disposed in the first ESL, an electrode disposed over the dielectric feature, and a second ESL disposed on the first ESL and the electrode.
    Type: Grant
    Filed: July 28, 2023
    Date of Patent: August 20, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Hsiang Chen, Po-Hsiang Huang, Wen-Sheh Huang, Hsing-Leo Tsai, Chia-En Huang
  • Publication number: 20240249991
    Abstract: A semiconductor structure includes a substrate having a front side and a back side, one or more dielectric layers over the front side, and a conductive structure. The one or more dielectric layers include a thermal sensor region and two dummy regions sandwiching the thermal sensor region along a second direction from a top view. The thermal sensor region and the two dummy regions extend longitudinally along a first direction generally perpendicular to the second direction from the top view. The conductive structure is embedded in the thermal sensor region of the one or more dielectric layers. The conductive structure includes conductive lines parallel to each other and extending longitudinally along the first direction, and conductive bars and vias electrically connecting the conductive lines. The conductive lines in a same dielectric layer of the one or more dielectric layers are electrically connected one by one zigzaggedly from the top view.
    Type: Application
    Filed: January 19, 2023
    Publication date: July 25, 2024
    Inventors: Yu-Hsiang Chen, Hsiu-Wen Hsueh, Szu-Lin Liu, Wen-Sheh Huang, Chloe Hsin-Yi Chen, Wei-Lin Lai
  • Publication number: 20240241607
    Abstract: A method, system, apparatus, and/or device for sensing an input in an augmented reality construct. The method, system, apparatus, and/or device may include a mixed-reality device, comprises memory and one or more processors communicatively coupled to a sensor, a touch device, and a display device that is at least partially transparent and configured to display a virtual object. The store instructions executable by the one or more processors to generate virtual object data for displaying a virtual object by the display device; output the virtual object data to the display device; receive, from the sensor, interaction data corresponding to a free-space interaction by a hand of a user with the virtual object; generate touch input data based on the interaction data; and output the touch input data to the touch device.
    Type: Application
    Filed: August 31, 2023
    Publication date: July 18, 2024
    Inventors: Shashwat Kandadai, Nathan Abercrombie, Yu-Hsiang Chen, Sleiman Itani
  • Patent number: 12040178
    Abstract: A semiconductor device structure and method for manufacturing the same are provided. The method includes forming a first resistive element over a substrate, and the first resistive element has a first sidewall extending in a first direction and a second sidewall opposite to the first sidewall and extending in the first direction. The method further includes forming a first conductive feature and a second conductive feature over and electrically connected to the first resistive element and forming a second resistive element over the first resistive element and spaced apart from the first resistive element in a second direction. In addition, the second resistive element is located between the first sidewall and the second sidewall of the first resistive element in a top view, and the first resistive element and the second resistive element are made of different nitrogen-containing materials.
    Type: Grant
    Filed: April 26, 2023
    Date of Patent: July 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsiu-Wen Hsueh, Yu-Hsiang Chen, Wen-Sheh Huang, Chii-Ping Chen, Wan-Te Chen
  • Publication number: 20240194559
    Abstract: A device includes a device layer comprising a first transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure includes a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a conductive line electrically connected to the source/drain region of the first transistor through the contact; and a thermal dissipation path thermally connected to the device layer, the thermal dissipation path extending to a surface of the second interconnect structure opposite the device layer. The thermal dissipation path comprises a dummy via.
    Type: Application
    Filed: February 21, 2024
    Publication date: June 13, 2024
    Inventors: Wen-Sheh Huang, Yu-Hsiang Chen, Chii-Ping Chen
  • Patent number: 11942390
    Abstract: A device includes a device layer comprising a first transistor; a first interconnect structure on a front-side of the device layer; and a second interconnect structure on a backside of the device layer. The second interconnect structure includes a first dielectric layer on the backside of the device layer; a contact extending through the first dielectric layer to a source/drain region of the first transistor; a conductive line electrically connected to the source/drain region of the first transistor through the contact; and a thermal dissipation path thermally connected to the device layer, the thermal dissipation path extending to a surface of the second interconnect structure opposite the device layer. The thermal dissipation path comprises a dummy via.
    Type: Grant
    Filed: June 6, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Sheh Huang, Yu-Hsiang Chen, Chii-Ping Chen
  • Patent number: 11923295
    Abstract: A semiconductor structure includes a first dielectric layer over a first conductive line and a second conductive line, a high resistance layer over a portion of the first dielectric layer, a second dielectric layer on the high resistance layer, a low-k dielectric layer over the second dielectric layer, a first conductive via extending through the low-k dielectric layer and the second dielectric layer, and a second conductive via extending through the low-k dielectric layer and the first dielectric layer to the first conductive line. The first conductive via extends into the high resistance layer.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hong-Wei Chan, Yung-Shih Cheng, Wen-Sheh Huang, Yu-Hsiang Chen