Patents by Inventor Yu-Hsiang Chien

Yu-Hsiang Chien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11984899
    Abstract: A phase-locked loop circuit includes a phase frequency detector (PFD) circuit, a digital code generator circuit, a frequency divider and an oscillator circuit. The PFD circuit is configured to detect a difference in phase and frequency between a reference clock and a feedback clock to generate a first control signal and a second control signal. The digital code generator circuit is configured to process the second control signal to generate a digital code. The frequency divider is configured to receive an output clock to generate the feedback clock. The oscillator circuit is configured to generate the output clock according to the first control signal and the digital code. A frequency of the output clock is determined according to a first control parameter and a second control parameter of different types. The first and second control parameters are adjusted in response to the first control signal and the digital code respectively.
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: May 14, 2024
    Assignee: M31 TECHNOLOGY CORPORATION
    Inventors: Ching-Hsiang Chang, Yu-Hsun Chien
  • Patent number: 11715669
    Abstract: A method of manufacturing a through silicon via (TSV) is provided in the present invention, including steps of forming a TSV sacrificial structure in a substrate, wherein the TSV sacrificial structure contacts a metal interconnect on the front side of the substrate, performing a backside thinning process to expose the TSV sacrificial structure from the back side of the substrate, removing the TSV sacrificial structure to form a through silicon hole, and filling the through silicon hole with conductive material to form a TSV.
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: August 1, 2023
    Assignee: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Shih-Ping Lee, Tse-Hsien Wu, Pin-Chieh Huang, Yu-Hsiang Chien, Yeh-Yu Chiang
  • Publication number: 20220130725
    Abstract: A method of manufacturing a through silicon via (TSV) is provided in the present invention, including steps of forming a TSV sacrificial structure in a substrate, wherein the TSV sacrificial structure contacts a metal interconnect on the front side of the substrate, performing a backside thinning process to expose the TSV sacrificial structure from the back side of the substrate, removing the TSV sacrificial structure to form a through silicon hole, and filling the through silicon hole with conductive material to form a TSV.
    Type: Application
    Filed: August 4, 2021
    Publication date: April 28, 2022
    Applicant: Powerchip Semiconductor Manufacturing Corporation
    Inventors: Shih-Ping Lee, Tse-Hsien Wu, Pin-Chieh Huang, Yu-Hsiang Chien, Yeh-Yu Chiang