Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, a fourth repeating unit, and a fifth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), the fourth repeating unit has a structure of Formula (IV), and the fifth repeating unit has a structure of Formula (V), a structure of Formula (VI), or a structure of Formula (VII) wherein A1, A2, A3, A4, X1, Z1, R1, R2, R3 and Q are as defined in the specification.

Abstract: A liquid crystal polymer, composition, liquid crystal polymer film, laminated material and method of forming liquid crystal polymer film are provided. The liquid crystal polymer includes a first repeating unit, a second repeating unit, a third repeating unit, and a fourth repeating unit. The first repeating unit has a structure of Formula (I), the second repeating unit has a structure of Formula (II), the third repeating unit has a structure of Formula (III), and the fourth repeating unit has a structure of Formula (IV), a structure of Formula (V) or a structure of Formula (VI) wherein A1, A2, A3, Z1, R1, R2, R3 and Q are as defined in the specification.

Abstract: A device includes a sensor die having a sensing region at a top surface of the sensor die, an encapsulant at least laterally encapsulating the sensor die, a conductive via extending through the encapsulant, and a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure includes a first dielectric layer extending over the encapsulant and the top surface of the sensor die, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer.

Abstract: A radio frequency (RF) device and a voltage generation and harmonic suppressor thereof are provided. The RF device includes the voltage generation and harmonic suppressor and a RF circuit. The voltage generation and harmonic suppressor is configured to receive a RF signal to output at least one direct current (DC) voltage related to the RF signal, and configured to suppress a harmonic generated by the RF signal in the voltage generation and harmonic suppressor. The RF circuit is configured to receive the RF signal, and configured to perform an operation according to the at least one DC voltage.

Abstract: A radio frequency switch has an antenna end, a first signal end for transmitting a first radio frequency signal, a second signal end for transmitting a second radio frequency signal, a third signal end for transmitting a third radio frequency signal, a first series path having a first switch, a second series path having a second switch, a third series path having a third switch, a first shunt path coupled between the first signal end and a node, a second shunt path coupled between the second signal end and the node, a common path coupled between the node and a first reference voltage end, and a third shunt path coupled between the third signal end and a second reference voltage end. The first series path and the second series path are connected to a common ground pad via the common path.

Abstract: A radio frequency switch has an antenna end, a first signal end for transmitting a first radio frequency signal, a second signal end for transmitting a second radio frequency signal, a third signal end for transmitting a third radio frequency signal, a first series path having a first switch, a second series path having a second switch, a third series path having a third switch, a first shunt path coupled between the first signal end and a node, a second shunt path coupled between the second signal end and the node, a common path coupled between the node and a first reference voltage end, and a third shunt path coupled between the third signal end and a second reference voltage end. The first series path and the second series path are connected to a common ground pad via the common path.

Abstract: A radio frequency (RF) device and a voltage generation and harmonic suppressor thereof are provided. The RF device includes the voltage generation and harmonic suppressor and a RF circuit. The voltage generation and harmonic suppressor is configured to receive a RF signal to output at least one direct current (DC) voltage related to the RF signal, and configured to suppress a harmonic generated by the RF signal in the voltage generation and harmonic suppressor. The RF circuit is configured to receive the RF signal, and configured to perform an operation according to the at least one DC voltage.