Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a high-voltage (HV) region and a low-voltage (LV) region; forming a base on the HV region and fin-shaped structures on the LV region; forming a first insulating around the fin-shaped structures; removing the base, the first insulating layer, and part of the fin-shaped structures to form a first trench in the HV region and a second trench in the LV region; forming a second insulating layer in the first trench and the second trench; and planarizing the second insulating layer to form a first shallow trench isolation (STI) on the HV region and a second STI on the LV region.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: Provided are a package structure and a method of forming the same. The package structure includes a bottom package having a first sidewall and a second sidewall opposite to each other; a hybrid path layer disposed on the bottom package, wherein the hybrid path layer comprises an optical path layer and an electrical path layer, and at least one optical path of the optical path layer extends from the first sidewall of the bottom package beyond a center of the bottom package; and a plurality of dies bonded onto the hybrid path layer.

Abstract: A light-emitting device array includes a first light-emitting device, a second light-emitting device, and a third light-emitting device. A first beam shaping structure of the first light-emitting device is configured to convert light emitted by a first light-emitting structure of first light-emitting device into first structured light. A second beam shaping structure of the second light-emitting device is configured to convert light emitted by a second light-emitting structure of second light-emitting device into second structured light. Speckle patterns and spatial distributions of the first structured light and the second structured light on a projection plane are the same. A third beam shaping structure of the third light-emitting device is configured to convert light emitted by a third light-emitting structure of third light-emitting device into third structured light.

Abstract: A method for fabricating a semiconductor device includes first providing a substrate having a high-voltage (HV) region, a medium-voltage (MV) region, and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first base on the substrate, a first gate dielectric layer on the first base, and a first gate electrode on the first gate dielectric layer. The LV device includes a fin-shaped structure on the substrate, and a second gate electrode on the fin-shaped structure, in which a top surface of the first gate dielectric layer is even with a top surface of the fin-shaped structure.

Abstract: A display method and a display system for an anti-dizziness reference image are provided. The display system includes a display, a range extraction unit, an information analyzing unit, an object analyzing unit and an image setting unit. The display is used to display the anti-dizziness reference image. The range extraction unit is used to obtain a gaze background range of a user. The image setting unit is used to set an image hue, an image lightness, an image brightness, an image content or an ambient lighting display content of the anti-dizziness reference image according to a background hue information, a background lightness information, a background brightness information, or a road information of the gaze background range; or set an image ratio between the anti-dizziness reference image and a display area of the display according to an object distance or an object area of the watched object.

Abstract: A method for facilitating streamer interaction with a viewer includes extracting a history topic based on an activity record of the viewer; calculating a score of each of the history topics based on at least one parameter; and generating a topic suggestion based on the history topic and the score which is corresponding to the history topic, and providing the topic suggestion to the streamer. The method is suitable for providing a topic suggestion (or interact topic suggestion) with respect to the viewer to the streamer via a live-streaming platform executed by a computing device. Thereby, the method can be used for facilitating streamer interaction with viewers and provides an appropriate topic suggestion. In addition, a computing device and a computer-readable storage medium which are capable of implementing the method are also provided.

Abstract: A semiconductor structure includes a source/drain feature in the semiconductor layer. The semiconductor structure includes a dielectric layer over the source/drain feature. The semiconductor structure includes a silicide layer over the source/drain feature. The semiconductor structure includes a barrier layer over the silicide layer. The semiconductor structure includes a seed layer over the barrier layer. The semiconductor structure includes a metal layer between a sidewall of the seed layer and a sidewall of the dielectric layer, a sidewall of each of the silicide layer, the barrier layer, and the metal layer directly contacting the sidewall of the dielectric layer. The semiconductor structure includes a source/drain contact over the seed layer.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A cell culture device is provided, which comprises a cavity and a base layer, wherein the base layer is a type of plastic thin film and has a thickness of 1 ?m to 100 ?m; a second-moment of inertia lower than 6×106 ?m4; and a resultant flexural rigidity of 1×10?6 Pa·m4 to 0.02 Pa·4. Accordingly, the base layer can produce an out-of-plane strain, and bending deformation can occur. Therefore, a growth space close to in vivo environment is provided by the base layer for the cells when the cells attach to the base layer, thereby promoting the growth and maturation of the cells and tissues.

Abstract: A piezoelectric motorization system has a mechanically flexible body that has one or more surfaces for placing piezoelectric actuators. The system has groups of piezoelectric actuators each positioned on one of the surfaces of the mechanically flexible body that is connected to the electronic circuitry. The electronic circuitry controls the driving of the mechanical loads by the mechanically flexible body by injecting sets of control signals into different groups of actuators positioned on the mechanically flexible body. Each control signal operates groups of driving frequencies with an adjustable amplitude ratio and an adjustable phase difference among driving frequencies. And, under a set of boundary conditions exhibited by a set of structural dimensions of the mechanically flexible body, each control signal induces multi-mode resonance of the mechanically flexible body for driving the mechanical loads multi-dimensionally.

Abstract: A piezoelectric patch sensor for measuring muscle movement of contraction and extension is disclosed. The sensor is elongated and directly attached to a skin site of a user for the measuring via an interface circuit connected to a host processor. The piezoelectric patch sensor has an adhesive layer with an adhesive bottom surface for firmly attaching to the skin site. An elastic sheet is integrated on top of the adhesive layer. A piezoelectric thread is further integrated on top of the elastic sheet and has a bundle of aligned piezoelectric fibers. The thread is electrically coupled to the interface circuit via a pair of conductive wires, forming a piezoelectric measurement circuitry. Muscle movement under the skin site shrinks or extends the piezoelectric patch sensor in its entirety along the direction of muscle movement due to a corresponding shrinking or extending movement of the skin firmly attached to the adhesive layer.

Abstract: A piezoelectric patch sensor for measuring muscle movement of contraction and extension is disclosed. The sensor is elongated and directly attached to a skin site of a user for the measuring via an interface circuit connected to a host processor. The piezoelectric patch sensor has an adhesive layer with an adhesive bottom surface for firmly attaching to the skin site. An elastic sheet is integrated on top of the adhesive layer. A piezoelectric thread is further integrated on top of the elastic sheet and has a bundle of aligned piezoelectric fibers. The thread is electrically coupled to the interface circuit via a pair of conductive wires, forming a piezoelectric measurement circuitry. Muscle movement under the skin site shrinks or extends the piezoelectric patch sensor in its entirety along the direction of muscle movement due to a corresponding shrinking or extending movement of the skin firmly attached to the adhesive layer.

Abstract: A piezoelectric motorization system for driving mechanical loads multi-dimensionally by an electronic circuitry is disclosed. The piezoelectric motorization system has a piezoelectric apparatus that is constructed by a mechanically flexible body that has multiple piezoelectric actuators attached its surfaces, where these actuators are controlled by an electronic circuitry. The mechanically flexible body has a finite structure with a sets of boundary conditions to determine its out-of-plane resonant modes. The electronic circuitry inject at least two sets of control signals into different groups of actuators at or near different resonant frequencies. Using these control signals, traveling waves can be generated on the piezoelectric apparatus to move mechanical loads placed on its surface. Or, the traveling waves are used to propel the piezoelectric apparatus for motorization.

Abstract: The present invention relates to fluidic devices for preparing, processing, storing, preserving, and/or analyzing samples. In particular, the devices and related systems and methods allow for preparing and/or analyzing samples (e.g., biospecimen samples) by using one or more of capture regions and/or automated analysis.

Abstract: Provided is a process for creating a 3D metabolically active microtissue perfused with living microvessels which have a direct fluidic connection with neighboring microfluidic channels. The process comprises preparing a template comprising a plurality of channels, and creating a network within said channels, said network comprising microfluidic channels, metabolically active living microvessels, and microtissues. The microvessels can sprout from said microvessels and/or form within the microtissue in response to a stimulus applied from said microfluidic channels or stimulus derived from the said tissues. In another embodiment, a device is provided comprising a supportive structure, one or more microfluidic channels, one or more microtissue compartments, and one or more microvessels, whereby the microvessels connect said microfludic channels and microtissue and perfuse the microtissue to deliver fluid from the microfluidic channels to the microtissues.

Abstract: Alleviating obesity in a subject (e.g., a human subject) having, obesity using an IL-20 antagonist, which can be an antibody that blocks a signaling pathway mediated by IL-20. Such antibodies include anti-IL-20 antibodies and anti-IL-20R antibodies that specifically block the IL-20 signaling pathway.

Abstract: A photoconductive layer with electrical property adjustable via control of intensity or location of illumination by a light source is provided. The photoconductive layer has at least one charge generation material and at least one binder for distributing the charge generation material within the body of the layer. The localized change of electrical property in the photoconductive layer arises on and beneath the surface area of the layer illuminated by the light source via actuated bulk change in electrical charge contributed by the charge generation material in the area.

Abstract: Alleviating obesity in a subject (e.g., a human subject) having, being suspected of having, or at risk for obesity using an IL-20 antagonist, which can be an antibody that blocks a signaling pathway mediated by IL-20. Such antibodies include anti-IL-20 antibodies and anti-IL-20R antibodies that specifically block the IL-20 signaling pathway.