Abstract: An intellectual quality management method is disclosed. A heatmap risk interface is created according to the required data and the parameter configuration which are calculated using a time dependent risk priority number (RPN) equation. An intellectual audit scheduling algorithm is defined via the heatmap risk interface to automatically generate at least one audit plan. An audit program corresponding to the audit plan is performed and a plurality of problem points are selected. Intellectual root cause category recommendation is performed to the questions points. intellectual corrective actions and preventive action recommendations are performed to the problem points according to the intellectual root cause category recommendation to obtain at least one optimum corrective action and at least one preventive action.

Abstract: A video conference device may include at least one camera, at least one processor, and an interface. The at least one camera may be arranged to capture an image of a scene. The at least one processor may be arranged to: if a trigger occurs, detect a display region in the image based on a location of a pattern in the image, wherein in response to the display region being detected, the display region is excluded from the image; detect at least one specific object in the image; and extract the at least one detected specific object in the image as at least one local image. The interface may be arranged to transmit the at least one local image.

Abstract: An encoding control method, a memory storage device and a memory control circuit unit are disclosed. The method includes: performing, by an encoding circuit, a first encoding operation to generate first parity data according to write data, a first sub-matrix and a second sub-matrix of a parity check matrix; performing, by the encoding circuit, a second encoding operation to generate second parity data according to the write data, the first parity data, a third sub-matrix, a fourth sub-matrix and a fifth sub-matrix of the parity check matrix; and sending a first write command sequence to instruct a storing of the write data, the first parity data and the second parity data to a rewritable non-volatile memory module.

Abstract: A floating image display device, configured to generate a floating image, is provided. The floating image display device includes an image module and at least one transflective optical element. The image module is configured to provide a first image. The transflective optical element includes a first reflective surface and a second reflective surface. The first image is located between the first reflective surface and the second reflective surface. Each of the first reflective surface and the second reflective surface includes a curved surface and has no opening on an optical axis thereof. The second reflective surface is a transflective surface. The first reflective surface and the second reflective surface are configured to re-converge rays from the first image to form a second image. The second image is a floating image.

Abstract: A semiconductor device structure and method for manufacturing the same are provided. The method includes forming a first resistive element over a substrate, and the first resistive element has a first sidewall extending in a first direction and a second sidewall opposite to the first sidewall and extending in the first direction. The method further includes forming a first conductive feature and a second conductive feature over and electrically connected to the first resistive element and forming a second resistive element over the first resistive element and spaced apart from the first resistive element in a second direction. In addition, the second resistive element is located between the first sidewall and the second sidewall of the first resistive element in a top view, and the first resistive element and the second resistive element are made of different nitrogen-containing materials.

Abstract: The disclosure provides an electrical apparatus, including a substrate, a plurality of gate driver units and a plurality of gate lines. The gate driver units are disposed on the substrate. The gate lines are disposed on the substrate. Each of the gate lines is respectively electrically connected to the corresponding gate driver unit. Each of the gate lines is configured to transmit a respective gate signal. The gate lines include a first gate line and a second gate line. The first gate line and the second gate line are configured to transmit the respective gate signals at a same time.

Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.

Abstract: A server computer system has one or more node assemblies. A node assembly has two motherboards that are stacked one over another with their component sides facing toward each other. Memory cards that are mounted on one motherboard are interlaced with memory cards that are mounted on the other motherboard. At least processors of the two motherboards are immersed in a coolant fluid in a fluid immersion cooling tank. A processor cooling stack is mounted over a processor. The processor cooling stack includes flow regulation structures with sidewalls that regulate flow of vapor bubbles of the coolant fluid away from the processor.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A semiconductor structure includes a substrate, a buried oxide layer formed in the substrate and near a surface of the substrate, a gate dielectric layer formed on the substrate and covering the buried oxide layer, a gate structure formed on the gate dielectric layer and overlapping the buried oxide layer, and a source region and a drain region formed in the substrate and at two sides of the gate structure.

Abstract: A barbell support assembly is provided, including: a base; a support arm, including a connection section and a hook section connected with a first end of the connection section, the connection section being rotatably connected to the base and swingable between a first position and a second position, the hook section defining a hooking space; and a restoration unit, connected with a second end of the connection section, biasing the support arm toward the first position; when a rod of a barbell is received within the hooking space, the barbell drives the support arm to move from the first position to the second position, and when the rod of the barbell is removed from the support arm, the restoration unit forces the support arm to return to the first position.

Abstract: An automotive connector includes an outer shell, an inner shell mated with the outer shell, and a conductive assembly assembled in the inner shell. The hooks of the outer shell can be detached from the slots of the inner shell, so that the outer shell can be detached from the inner shell. Therefore, another outer shell can be assembled with the inner shell, so that outer shells with different insertion openings can be assembled with the same inner shell conveniently. Therefore, the outer shell of the automotive connector can be replaced quickly.

Abstract: An automotive connector includes an outer shell, an inner shell mated with the outer shell, and a conductive assembly assembled in the inner shell. The hooks of the outer shell can be detached from the slots of the inner shell, so that the outer shell can be detached from the inner shell. Therefore, another outer shell can be assembled with the inner shell, so that outer shells with different insertion openings can be assembled with the same inner shell conveniently. Therefore, the outer shell of the automotive connector can be replaced quickly.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a first resistive element and a second resistive element over the semiconductor substrate. A topmost surface of the second resistive element is higher than a topmost surface of the first resistive element. The semiconductor device structure also includes a first conductive feature and a second conductive feature electrically connected to the first resistive element. The second resistive element is between and electrically isolated from the first conductive feature and the second conductive feature. The semiconductor device structure further includes a first dielectric layer surrounding the first conductive feature and the second conductive feature.

Abstract: A semiconductor device includes a fin feature in a substrate, a stack of semiconductor layers over the fin feature. Each of the semiconductor layers does not contact each other. The device also includes a semiconductor oxide layer interposed between the fin feature and the stack of the semiconductor layers. A surface of the semiconductor oxide layer contacts the fin feature and an opposite surface of the semiconductor oxide layer contacts a bottom layer of the stack of semiconductor layers. The device also includes a conductive material layer encircling each of the semiconductor layers and filling in spaces between each of two semiconductor layers.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: An electronic device used in a method for expanding image depth obtains first images by a first sensor, the first images comprising depth information. The electronic device obtains second images by a second sensor, the second images comprising gradient information, and the first images correspond to the second images. The electronic device determines the pixels in the first images which contain expandable content according to the gradient information of the second images, applies expansion accordingly to the pixels in the first images to generate third images, and generate target depth maps according to the gradient information of the second images and the depth information of the third images.

Abstract: A fluid immersion cooling system includes a fluid tank that contains a layer of a dual-phase coolant fluid and one or more layers of single-phase coolant fluids. The dual-phase and single-phase coolant fluids are immiscible, with the dual-phase coolant fluid having a lower boiling point and higher density than a single-phase coolant fluid. A substrate of an electronic system is submerged in the tank such that high heat-generating components are immersed at least in the layer of the dual-phase coolant fluid. Heat from the components is dissipated to the dual-phase coolant fluid to generate vapor bubbles of the dual-phase coolant fluid. The vapor bubbles rise to a layer of a single-phase coolant fluid that is above the layer of the dual-phase coolant fluid. The vapor bubbles condense to droplets of the dual-phase coolant fluid. The droplets fall down into the layer of the dual-phase coolant fluid.

Abstract: A ventilation fan is disclosure and includes a housing, a grille support, a fan module, a base, plural connecting columns and a function module. The grille support and the base form a grille structure mounted under a ceiling. The fan module disposed within the housing forms an airflow flowing. The base and the grille support are connected through the plural connecting columns and spaced apart from each other. An inlet radially formed between the base and the grille support is in communication with the outlet through the grille opening. The base includes a holder having a holding opening axially downward and faced away from the housing. The function module is disposed within the holder through the holding opening.

Abstract: An organic-inorganic hybrid material is disclosure. The organic-inorganic hybrid material contains 5˜50 wt % of inorganic compounds and has a characteristic peak at 1050±50 cm?1 in FTIR spectrum. Furthermore, the invention also provides a fabricating process of the organic-inorganic hybrid material as well as its starting material “isocyanates”. In particular, the isocyanates are prepared from carbonate containing compounds and amines.