Abstract: The present disclosure provides a semiconductor structure, including a substrate, a gate structure over the substrate, including a work function layer over the substrate, a dielectric layer at least partially surrounding the gate structure, and a capping layer over the gate structure, wherein a bottom of the capping layer includes at least one protrusion protruding toward the substrate.

Abstract: A living organism image monitoring system is provided, relating to the technical field of medical equipment. The living organism image monitoring system comprises a display module, a processor and a CIGS chip, the CIGS chip, the processor and the display module being electrically connected, the CIGS chip being used for detecting a near infrared light signal of a living organism and generating a current signal after having detected the near infrared light signal, the processor being used for generating a first pulse signal according to the current signal, and the display module being used for displaying an image according to the first pulse signal. The living organism image monitoring system provided by the present disclosure has the advantages of being capable of synchronously transmitting the images of a living organism to the display module for display and enabling the images to be clearer.

Abstract: A 3D depth image acquiring method and apparatus, and an image acquisition device are provided. The method is applied to an image acquisition device comprising a VIS-NIR picture sensor and an infrared structured light projection component. The VIS-NIR picture sensor comprises a plurality of dot matrix units each having a blue light photosensitive component, a green light photosensitive component, a red light photosensitive component and an NIR photosensitive component distributed thereon. The method comprises: controlling the blue light photosensitive component, the green light photosensitive component, the red light photosensitive component, the NIR photosensitive component and the infrared structured light projection component to operate, to obtain an optimum NIR image and an optimum VIS image; and processing the optimum VIS image and a depth image which is obtained by performing calculation on the optimum NIR image using a 3D depth mode, to obtain a 3D depth image.

Abstract: A CMOS image sensor encapsulation structure and its manufacturing method, including: forming a blind hole in a combined layer formed by a first insulating layer and a wafer, a surface of the first insulating layer facing away from the wafer having a micro convex lens; forming a second insulating layer on a hole wall of the blind hole, then filling an electrically conductive material in the blind hole having the second insulating layer, and making a conductor in the combined layer in signal connection with the micro convex lens and an IC extend to a surface of the first insulating layer and electrically connecting the conductor to the electrically conductive material; fixing the transparent substrate material on a surface of the first insulating layer having the micro convex lens, forming a dummy wafer on a surface of the transparent substrate material, and then thinning the wafer by grinding.

Abstract: Disclosed are a CMOS image sensor encapsulation structure and a method for manufacturing the same, including the steps of: firstly, a transparent substrate material is fixed to a surface of a first insulating layer having a micro convex lens, a dummy wafer is fixed on a surface of the transparent substrate material, and then a wafer is thinned by grinding, and in this process, the transparent substrate material provides more mechanical support force for the wafer, therefore, the wafer can become thinner by grinding, thus the CMOS image sensor encapsulation structure is characterized by being formed in a thin shape. Besides, a second installation area has a protection glue layer which can prevent oxygen and moisture from entering internal elements and absorb scattered light.

Abstract: A 3D depth image acquiring method and apparatus, and an image acquisition device are provided. The method is applied to an image acquisition device comprising a VIS-NIR picture sensor and an infrared structured light projection component. The VIS-NIR picture sensor comprises a plurality of dot matrix units each having a blue light photosensitive component, a green light photosensitive component, a red light photosensitive component and an NIR photosensitive component distributed thereon. The method comprises: controlling the blue light photosensitive component, the green light photosensitive component, the red light photosensitive component, the NIR photosensitive component and the infrared structured light projection component to operate, to obtain an optimum NIR image and an optimum VIS image; and processing the optimum VIS image and a depth image which is obtained by performing calculation on the optimum NIR image using a 3D depth mode, to obtain a 3D depth image.

Abstract: Disclosed are a CMOS image sensor encapsulation structure and a method for manufacturing the same, including the steps of: firstly, a transparent substrate material is fixed to a surface of a first insulating layer having a micro convex lens, a dummy wafer is fixed on a surface of the transparent substrate material, and then a wafer is thinned by grinding, and in this process, the transparent substrate material provides more mechanical support force for the wafer, therefore, the wafer can become thinner by grinding, thus the CMOS image sensor encapsulation structure is characterized by being formed in a thin shape. Besides, a second installation area has a protection glue layer which can prevent oxygen and moisture from entering internal elements and absorb scattered light.

Abstract: A CMOS image sensor encapsulation structure and its manufacturing method, including : forming a blind hole in a combined layer formed by a first insulating layer and a wafer, a surface of the first insulating layer facing away from the wafer having a micro convex lens; forming a second insulating layer on a hole wall of the blind hole, then filling an electrically conductive material in the blind hole having the second insulating layer, and making a conductor in the combined layer in signal connection with the micro convex lens and an IC extend to a surface of the first insulating layer and electrically connecting the conductor to the electrically conductive material; fixing the transparent substrate material on a surface of the first insulating layer having the micro convex lens, forming a dummy wafer on a surface of the transparent substrate material, and then thinning the wafer by grinding.

Abstract: A living organism image monitoring system is provided, relating to the technical field of medical equipment. The living organism image monitoring system comprises a display module, a processor and a CIGS chip, the CIGS chip, the processor and the display module being electrically connected, the CIGS chip being used for detecting a near infrared light signal of a living organism and generating a current signal after having detected the near infrared light signal, the processor being used for generating a first pulse signal according to the current signal, and the display module being used for displaying an image according to the first pulse signal. The living organism image monitoring system provided by the present disclosure has the advantages of being capable of synchronously transmitting the images of a living organism to the display module for display and enabling the images to be clearer.

Abstract: An integrated circuit layout structure and method thereof establishes cell rows with different cell heights for accommodating cells with corresponding heights, such that an area of an integrated circuit can be fully utilized. Therefore, it reduces an area wasted by an unnecessary uniform cell height, so as to improve integration of the integrated circuit.

Abstract: An integrated circuit layout structure and method thereof establishes cell rows with different cell heights for accommodating cells with corresponding heights, such that an area of an integrated circuit can be fully utilized. Therefore, it reduces an area wasted by an unnecessary uniform cell height, so as to improve integration of the integrated circuit.

Abstract: A light source device includes a frame, at least one light emitting chip, a light transferring layer and a lens layer. The at least one light emitting chip is disposed within the frame for emitting light. The light transferring layer covers the at least one light emitting chip and combines with the frame. The lens layer is formed on the frame and contacts and combines with the light transferring layer, such that the light emitted from the at least one light emitting chip directly projects into the lens layer after passing through the light transferring layer. The lens layer has a light emitting surface on a side away from the light transferring layer for transferring the light emitted from the at least one light emitting chip into a light shape after passing through the light transferring layer and the lens layer.

Abstract: A method for judging the status of a mechanical system is provided. First, a vibration signal related to the mechanical system is provided. Subsequently, an empirical mode decomposition process is performed on the vibration signal, so as to generate a plurality of intrinsic mode functions. Plural target intrinsic mode functions are selected from the intrinsic mode functions. Based on the target intrinsic mode functions, the status of the mechanical system is judged.