Abstract: A semiconductor variable resistance device includes: a substrate; a gate formed on the substrate, the substrate further including a first trench the first trench formed outside a side of the gate; first and second doped regions, formed in the substrate, the first and second doped regions formed on two sides of the gate, the first trench formed between the gate and the first doped region; and first and second lightly-doped drain (LDD) regions, formed in the substrate. The first LDD region is formed between the first trench and the first doped region. The second LDD region is formed between the gate and the second doped region. The first and second doped regions form a source and a drain, respectively. The first trench is deeper than the first and the second lightly-doped drain regions.

Abstract: A fuse structure includes a substrate, a fuse element, and an auxiliary device. The fuse element is disposed on the substrate. The auxiliary device includes a source region and a drain region respectively disposed at two opposite sides of the fuse element. The auxiliary device is configured to monitor and diagnose the fuse element. The source region and the drain region are electrically isolated from the fuse element. A monitoring method of the fuse structure includes following steps. A drain voltage signal is applied to the drain region of the auxiliary device, a gate voltage signal is applied to the fuse element, and a signal from the source region is analyzed to diagnose a condition of the fuse element.

Abstract: A fuse structure includes a substrate, a fuse element, and an auxiliary device. The fuse element is disposed on the substrate. The auxiliary device includes a source region and a drain region respectively disposed at two opposite sides of the fuse element. The auxiliary device is configured to monitor and diagnose the fuse element. The source region and the drain region are electrically isolated from the fuse element. A monitoring method of the fuse structure includes following steps. A drain voltage signal is applied to the drain region of the auxiliary device, a gate voltage signal is applied to the fuse element, and a signal from the source region is analyzed to diagnose a condition of the fuse element.