Abstract: An IC structure includes a biologically sensitive field-effect transistor (BioBET) in a semiconductor substrate, and a dielectric layer over a backside surface of the semiconductor substrate. The dielectric layer has a sensing well extending through the dielectric layer to a channel region of the BioFET. The IC structure further includes a biosensing film, a plurality of fluid channel walls, and a first heater. The biosensing film lines the sensing well in the dielectric layer. The fluid channel walls are over the biosensing film and define a fluid containment region over the sensing well of the dielectric layer. The first heater is in the semiconductor substrate. The first heater has at least a portion overlapping with the fluid containment region.

Abstract: A biosensor system includes an array of biosensors with a plurality of electrodes situated proximate the biosensor. A controller is configured to selectively energize the plurality of electrodes to generate a DEP force to selectively position a test sample relative to the array of biosensors.

Abstract: In an embodiment, a circuit includes: an error amplifier; a temperature sensor, wherein the temperature sensor is coupled to the error amplifier; a discrete time controller coupled to the error amplifier, wherein the discrete time controller comprises digital circuitry; a multiple bits quantizer coupled to the discrete time controller, wherein the multiple bits quantizer produces a digital code output; and a heating array coupled to the multiple bits quantizer, wherein the heating array is configured to generate heat based on the digital code output.

Abstract: Provided is a high ruggedness heterojunction bipolar transistor (HBT), including a collector layer. The collector layer includes a InGaP layer or a wide bandgap layer. The bandgap of the InGaP layer is greater than 1.86 eV.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: The present invention is a semiconductor device having a defect blocking region. The semiconductor device includes a substrate, a defect source region, a semiconductor layer and a defect blocking region. The defect source region is on the substrate, wherein the defect source region is a metamorphic buffer layer or a buffer layer, the semiconductor layer over the defect source region, wherein a lattice constant of the semiconductor layer is different from a lattice constant of the substrate. The defect blocking region is disposed on the substrate and below the semiconductor layer, wherein the defect blocking region includes a superlattice structure, wherein at least one of two adjacent layers of the superlattice structure has strain relative to the semiconductor layer, or a lattice constant of the superlattice structure is close to or equal to the lattice constant of the semiconductor layer.

Abstract: A heterojunction bipolar transistor structure is provided, including a substrate and a multi-layer structure formed on the substrate. The multi-layer structure includes a current clamping layer, and the current clamping layer can be disposed in a collector layer, disposed in a sub-collector layer, or interposed between a collector layer and a sub-collector layer. An electron affinity of the current clamping layer is less than an electron affinity of an epitaxial layer formed on the current clamping layer.

Abstract: A wire bonding device of a stator of a motor includes insulating rings, an insulating cover, and conductors. Each insulating ring has first and second fixing structures disposed thereon. The insulating rings are stacked layer by layer with the first fixing structures corresponding to the second fixing structures. The insulating cover covers an uppermost one of the insulating rings. Each conductor includes an embedded segment, two bending segments, two protruding segments, and two wire-bonding segments. The embedded segment is accommodated in a corresponding insulating ring and has a flat strip shape. The bending segments are integrally extended from two ends of the embedded segment respectively and bended relative to the embedded segment. The protruding segments are integrally extended from the bending segments and protrude out of the corresponding insulating ring. The wire-bonding segments are integrally extended from the protruding segments and located outside the insulating ring.

Abstract: An eddy-current magnetic controlled loading device used in a magnetic controlled power generator, including a frame, an eddy-current magnetic controlled loading device, a flywheel, a rotary axle for supporting the flywheel, and a magnetic controlled device. The eddy-current magnetic controlled loading device includes: a rotor coupled to the rotary axle and positioned in the flywheel, the rotor having a rotor core and several pieces of permanent magnets arranged on outer circumference of the rotor core, the rotary axle being rotatable to drive and rotate the flywheel and the rotor; and a stator fixed on the frame and coaxially disposed outside the rotor. The stator has a stator core and multiple radial projections arranged on inner circumference of the stator core. A gap between crown sections of the projections is smaller than a gap between root sections of the projections, whereby a previously wound coil can be fitted onto the projections.