Patents by Inventor Yu-Hsiung Chang

Yu-Hsiung Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor array substrate having lightly doped amorphous silicon layer and method for fabricating same
    Publication number: 20080105871
    Abstract: An exemplary thin film transistor (TFT) array substrate (200) includes: a substrate (210), a gate electrode (220) disposed on the substrate, a gate insulating layer (230) disposed on the substrate having the gate electrode, a lightly doped amorphous silicon (a-Si) layer (241) disposed on the gate insulating layer, a first a-Si layer (242) disposed on the lightly doped a-Si layer, a source electrode (251) and a drain electrode (252) disposed on the gate insulating layer and the a-Si layer. The thin film transistor array substrate has a low leakage current.
    Type: Application
    Filed: November 5, 2007
    Publication date: May 8, 2008
    Inventors: Shuo-Ting Yan, Chien-Hsiung Chang, Yu-Hsiung Chang, Kai-Yuan Cheng, Tsau-Hua Hsieh, Chao-Yi Hung, Chao-Chih Lai