Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a deep trench capacitor (DTC) having a portion within the substrate, and an interconnect structure over the DTC and the substrate. The interconnect structure includes a seal ring structure in electrical contact with the substrate, a first conductive via in electrical contact with the DTC, and a first conductive line electrically coupling the seal ring structure to the first conductive via.

Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.

Abstract: Article of footwear comprising a midsole, the midsole comprises an opening and closing component such as zippers or Velcro. During the manufacturing process of lasting construction, a shoe last can put into a shoe upper integrated with the midsole through the released opening and closing component of midsole to finish the put-on last step. After the opening and closing component of midsole is sealed, a procedure similar to broad lasting is finished, and a sole laying step and a formation step can be continued.

Abstract: The invention provides a non-volatile memory apparatus and an erasing method thereof. The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.

Abstract: A nonvolatile memory includes a memory array. The memory array is connected to m word lines and (2+n) bit line pairs. These bit line pairs include an erase bit line pair, a program bit line pair and n data bit line pairs. Each word line is connected with (2+n) differential cells of a corresponding row. The (2+n) differential cells include an erase flag differential cell, a program flag differential cell and n data differential cells. The erase flag differential cell is connected with the erase bit line pair. The program flag differential cell is connected with the program line pair. The n data differential cells are connected with the data line pairs. The n data differential cells are determined as erased cells or programmed cells according to setting conditions of the erase flag differential cell and the program flag differential cell.

Abstract: A memory cell array includes a first bit line, a first word line, a first source line pair and a first memory cell. A select terminal of the first memory cell is connected with the first word line. A first control terminal of the first memory cell is connected with a first source line of the first source line pair. A second control terminal of the first memory cell is connected with a second source line of the first source line pair. A third control terminal of the first memory cell is connected with the first bit line.

Abstract: A nonvolatile memory includes a memory array. The memory array is connected to m word lines and (2+n) bit line pairs. These bit line pairs include an erase bit line pair, a program bit line pair and n data bit line pairs. Each word line is connected with (2+n) differential cells of a corresponding row. The (2+n) differential cells include an erase flag differential cell, a program flag differential cell and n data differential cells. The erase flag differential cell is connected with the erase bit line pair. The program flag differential cell is connected with the program line pair. The n data differential cells are connected with the data line pairs. The n data differential cells are determined as erased cells or programmed cells according to setting conditions of the erase flag differential cell and the program flag differential cell.

Abstract: The invention provides a non-volatile memory apparatus and an erasing method thereof. The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.

Abstract: The invention provides a non-volatile memory apparatus and an erasing method thereof. The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.

Abstract: A bias voltage generator for providing a control voltage and a source line voltage to a memory array includes a reference voltage generating circuit and a voltage converting circuit. The reference voltage generating circuit receives a program signal or an erase signal, and generates a reference voltage. If the program signal is received by the reference voltage generating circuit, the reference voltage has a positive temperature coefficient. If the erase signal is received by the reference voltage generating circuit, the reference voltage has a negative temperature coefficient. The voltage converting circuit converts the reference voltage into the control voltage and the source line voltage. The voltage converting circuit enlarges the reference voltage by a first magnification so as to produce the source line voltage, and enlarges the reference voltage by a second magnification so as to produce the control voltage.

Abstract: The invention provides a non-volatile memory apparatus and an erasing method thereof The non-volatile memory apparatus includes a plurality of memory sectors and a control voltage provider. The memory sectors disposed in a same well, wherein, each of the memory sectors includes a plurality of memory cells for respectively receiving a plurality of control line signals. The control voltage provider provides the control line signals to the memory cells of each of the first memory sectors. When an erasing operation is operated, one of the memory sectors is selected for erasing and the control voltage provider provides the control line signals of the selected memory sector with an erase control voltage and provides the control line signals of the un-selected memory sectors with a un-erase control voltage, voltage levels of the erase control voltage and the un-erase control voltage are different.

Abstract: A sensing method of a current sensing amplifier is provided used for determining a storing state of a cell of a non-volatile memory device during a read cycle. After a sensing node and a reference node are adjusted to a constant voltage, the sensing node and the reference node are maintained in a floating state. Then, the sensing node is connected with a data line to receive a cell current from the cell, and the reference node is connected with a reference current source to receive a reference current from the reference current source. When a reference voltage of the reference node reaches a preset voltage, the storing state of the cell is determined according to a relationship between a sensing voltage of the sensing node and the preset voltage.

Abstract: A bias voltage generator for providing a control voltage and a source line voltage to a memory array includes a reference voltage generating circuit and a voltage converting circuit. The reference voltage generating circuit receives a program signal or an erase signal, and generates a reference voltage. If the program signal is received by the reference voltage generating circuit, the reference voltage has a positive temperature coefficient. If the erase signal is received by the reference voltage generating circuit, the reference voltage has a negative temperature coefficient. The voltage converting circuit converts the reference voltage into the control voltage and the source line voltage. The voltage converting circuit enlarges the reference voltage by a first magnification so as to produce the source line voltage, and enlarges the reference voltage by a second magnification so as to produce the control voltage.

Abstract: The present invention provides a flash memory including a memory cell, a current limiter and a program voltage generator. The memory cell is programmed in response to a program current and a program voltage. The current limiter reflects amount of the program current by a data-line signal, e.g., a data-line voltage. The program voltage generator generates and controls the program voltage in response to the data-line voltage, such that the program current can track to a constant reference current.

Abstract: A sensing method of a current sensing amplifier is provided used for determining a storing state of a cell of a non-volatile memory device during a read cycle. After a sensing node and a reference node are adjusted to a constant voltage, the sensing node and the reference node are maintained in a floating state. Then, the sensing node is connected with a data line to receive a cell current from the cell, and the reference node is connected with a reference current source to receive a reference current from the reference current source. When a reference voltage of the reference node reaches a preset voltage, the storing state of the cell is determined according to a relationship between a sensing voltage of the sensing node and the preset voltage.

Abstract: A flash memory includes a program voltage generator, plural memory units, a current limiter, and a multi-bit program control unit. The program voltage generator is used for providing a constant program voltage during a detecting cycle and providing a dynamically-adjustable program voltage during a program cycle. The plural memory units output plural drain currents and plural data line voltages to plural data lines. The current limiter is used for receiving a reference current and a reference voltage, thereby controlling the plural drain currents. During the detecting cycle, a specified data line voltage of the plural data line voltages with the minimum voltage level is detected by the multi-bit program control unit. During the program cycle, the specified data line voltage is used as a feedback voltage, and the dynamically-adjustable program voltage is generated by the program voltage generator according to the feedback voltage.

Abstract: A clock trimming apparatus includes an oscillator, a judging unit, a latching unit, and a tracking unit. The oscillator has an input terminal receiving a bias signal and an output terminal generating a clock signal. After a frequency division is performed on the clock signal, the judging unit generates a frequency-divided signal. If the frequency-divided signal matches the reference signal, a pass signal generated by the judging unit is activated. The latching unit is used for generating a trimming completion signal. After the pass signal is activated, the trimming completion signal is activated. The tracking unit is used for counting a pulse number of the reference signal and providing the bias signal to the oscillator according to a trimming code. After the trimming completion signal is activated, the trimming code is stopped being adjusted.

Abstract: The invention provides a flash memory apparatus including at least one flash memory array block and a sense amplifying module. The flash memory array block comprises N storage columns, N reference word-line cell units and a reference storage column, wherein N is a positive integer. Each of the reference word-line cell units disposed in each of the storage columns, wherein, the reference word-line cell units further coupled to a reference word line and a dummy word line. The reference storage column includes a plurality of reference bit-line cells, the reference word line and the dummy word line, one of the reference bit-line cells which coupled to the reference word line is coupled to a reference bit line. The sense amplifying module compares currents from one of the bit lines and the corresponding reference bit line to generate at least one sensing result.

Abstract: The present invention provides a flash memory including a memory cell, a current limiter and a program voltage generator. The memory cell is programmed in response to a program current and a program voltage. The current limiter reflects amount of the program current by a data-line signal, e.g., a data-line voltage. The program voltage generator generates and controls the program voltage in response to the data-line voltage, such that the program current can track to a constant reference current.

Abstract: A flash memory includes a program voltage generator, plural memory units, a current limiter, and a multi-bit program control unit. The program voltage generator is used for providing a constant program voltage during a detecting cycle and providing a dynamically-adjustable program voltage during a program cycle. The plural memory units output plural drain currents and plural data line voltages to plural data lines. The current limiter is used for receiving a reference current and a reference voltage, thereby controlling the plural drain currents. During the detecting cycle, a specified data line voltage of the plural data line voltages with the minimum voltage level is detected by the multi-bit program control unit. During the program cycle, the specified data line voltage is used as a feedback voltage, and the dynamically-adjustable program voltage is generated by the program voltage generator according to the feedback voltage.