Abstract: A voltage level shifter is provided. The voltage level shifter includes a main level shifter, a first bias level shifter and a second bias level shifter. The main level shifter includes a first N-type transistor and a second N-type transistor cross-coupled to each other, a third N-type transistor and a fourth N-type transistor controlled by a first bias voltage, a fifth N-type transistor and a sixth N-type transistor respectively controlled by a second bias voltage and a third bias voltage, and a first P-type transistor and a second P-type transistor configured to respectively receive an input signal and an inverted input signal which have opposite voltage values. The first bias level shifter generates the first bias voltage according to an enable signal. The second bias level shifter generates the second bias voltage and the third bias voltage according to the first bias voltage and the input signal.

Abstract: A control gate voltage generating circuit for a non-volatile memory is provided. After the non-volatile memory leaves the factory, the control gate voltage is appropriately adjusted by the control gate voltage generating circuit according to the characteristics changes of the memory cells. When the read action is performed, the control gate voltage generating circuit provides the adjusted control gate voltage to the control gate line of the array structure. The magnitude of the reference current can be maintained in the range between the read current in the erase state and the read current in the program state. Consequently, the storage state of the selected memory cell can be accurately determined, and the life time of the non-volatile memory will be extended.

Abstract: A power control apparatus for a non-volatile memory includes a reference voltage generator, an adjusting circuit and a switching circuit. The adjusting circuit receives a deep standby signal and an operation signal. The adjusting circuit generates a mode indicating signal and a control signal. The switching circuit is connected with a first node. A voltage at the first node is an operation voltage. In a deep standby mode, the ground voltage is connected with the first node through the switching circuit. In a normal operation mode, a supply voltage is connected with the first node through the switching circuit. In a standby mode, an adjustable resistance path is connected between the supply voltage and the first node. The resistance value of the adjustable resistance path is adjusted according to the control signal until the operation voltage is equal to the reference voltage.

Abstract: A voltage level shifter includes an input transistor, a control circuit, a reset circuit, and a keeper circuit. The input transistor is configured to receive an input voltage and a first reference voltage. The control circuit is configured to generate a pulse voltage according to the input voltage and one of a node voltage, an output voltage, and an inversion input voltage. The reset circuit is configured to receive the first reference voltage and a second reference voltage and controlled by the pulse voltage. The reset circuit is coupled to the input transistor at a first node where the node voltage is generated. The keeper circuit is coupled to the first node and configured to generate the output voltage according to the node voltage, the first reference voltage, the second reference voltage, and the output voltage.

Abstract: Disclosed is a self-powered formaldehyde sensing device, comprising: a triboelectric material electrode layer including a first substrate and a first electrode layer formed on the first substrate; a triboelectric material dielectric layer including a second substrate, a second electrode layer formed on the second substrate, a dielectric reacting layer formed on the second electrode layer, and a reaction modification layer formed on the dielectric reacting layer to surface-modify the dielectric reacting layer, the reaction modification layer being a phosphomolybdic acid complex (cPMA) layer, the phosphomolybdic acid complex of the phosphomolybdic acid complex layer being obtained by dissolving 4,4?-bipyridine (BPY) in isopropanol (IPA) and then mixing with phosphomolybdic acid (PMA) solution; an elastic spacer; and an external circuit.

Abstract: A bicycle front derailleur is provided, including: a base, configured to be mounted to a bicycle frame; a linkage mechanism, including a connection portion configured to be connected with a cable, the linkage mechanism being swingably connected to the base; a chain guide, swingably connected to the linkage mechanism; and an adjustment assembly, disposed on the base, including a holder movably disposed on the base and an adjustment member, the holder being configured to be connected with a sheath for driving the cable, the adjustment member being movably disposed on the base and adjustable to drive the holder to move relative to the base.

Abstract: Materials for binding per- and polyfluoroalkyl substances (PFAS) are disclosed. A fluidic device comprising the materials for detection and quantification of PFAS in a sample is disclosed. The fluidic device may be configured for multiplexed analyses. Also disclosed are methods for sorbing and remediating PFAS in a sample. The sample may be groundwater containing, or suspected of containing, one or more PFAS.

Abstract: A rear derailleur is provided, including: a base, configured to be mounted to a bicycle; a linkage assembly, connected to the base; a movable member, rotatably connected to the linkage assembly; a chain guide, rotatably connected to the movable member by an axle assembly; a biasing member, located between the movable member and the chain guide, positioned to the movable member and the chain guide; a resistance mechanism, connected to the movable member; and a cap member, covering the resistance mechanism and driving the resistance mechanism, rotatably positionable in either of a first position and a second position, wherein when the cap member is positioned in the first position, the resistance mechanism provides a first resistance, and when the cap member is positioned in the second position, the resistance mechanism provides a second resistance which is different from the first resistance.

Abstract: A rear derailleur is provided, including: a base, configured to be mounted to a bicycle; a linkage assembly, connected to the base; a movable member, rotatably connected to the linkage assembly; a chain guide, rotatably connected to the movable member by an axle assembly; a biasing member, located between the movable member and the chain guide, positioned to the movable member and the chain guide; a resistance mechanism, connected to the movable member; and a cap member, covering the resistance mechanism and driving the resistance mechanism, rotatably positionable in either of a first position and a second position, wherein when the cap member is positioned in the first position, the resistance mechanism provides a first resistance, and when the cap member is positioned in the second position, the resistance mechanism provides a second resistance which is different from the first resistance.

Abstract: A rear derailleur is provided, including: a base, configured to be mounted to a bicycle; a movable member, movably disposed on the base; a shaft, rotatably connected to the movable member; a chain guide, connected to the shaft; a biasing member, disposed between the chain guide and the movable member; a resistance mechanism, connected to the movable member to apply frictional resistance to the shaft.

Abstract: A voltage level shifter includes an input transistor, a control circuit, a reset circuit, and a keeper circuit. The input transistor is configured to receive an input voltage and a first reference voltage. The control circuit is configured to generate a pulse voltage according to the input voltage and one of a node voltage, an output voltage, and an inversion input voltage. The reset circuit is configured to receive the first reference voltage and a second reference voltage and controlled by the pulse voltage. The reset circuit is coupled to the input transistor at a first node where the node voltage is generated. The keeper circuit is coupled to the first node and configured to generate the output voltage according to the node voltage, the first reference voltage, the second reference voltage, and the output voltage.

Abstract: A bicycle front derailleur is provided, including: a base, configured to be mounted to a bicycle frame; a linkage mechanism, including a connection portion configured to be connected with a cable, the linkage mechanism being swingably connected to the base; a chain guide, swingably connected to the linkage mechanism; and an adjustment assembly, disposed on the base, including a holder movably disposed on the base and an adjustment member, the holder being configured to be connected with a sheath for driving the cable, the adjustment member being movably disposed on the base and adjustable to drive the holder to move relative to the base.

Abstract: Materials for binding per- and polyfluoroalkyl substances (PFAS) are disclosed. A fluidic device comprising the materials for detection and quantification of PFAS in a sample is disclosed. The fluidic device may be configured for multiplexed analyses. Also disclosed are methods for sorbing and remediating PFAS in a sample. The sample may be groundwater containing, or suspected of containing, one or more PFAS.

Abstract: A data storage apparatus and a method for preventing data error using the same are provided. The data storage apparatus includes a memory and a memory controller. The memory includes a plurality of blocks. The memory controller is coupled to the memory and configured to perform the following operations: recording a read count of a target block of the memory; performing an error bit check on a free storage space of the target block when the read count of the target block meets a condition; and programming a dummy data to the free storage space of the target block in response to the determination that the check result is negative.

Abstract: A data storage apparatus and a method for preventing data error using the same are provided. The data storage apparatus includes a memory and a memory controller. The memory includes a plurality of blocks. The memory controller is coupled to the memory and configured to perform the following operations: recording a read count of a target block of the memory; performing an error bit check on a free storage space of the target block when the read count of the target block meets a condition; and programming a dummy data to the free storage space of the target block in response to the determination that the check result is negative.

Abstract: A method for determining a resistance calibration direction in ZQ calibration of a memory device includes: repeatedly comparing a reference voltage with an target voltage by a comparator to obtain an odd plurality of comparison outputs, each of the comparison outputs being one of a high-level state and a low-level state; determining a majority of the comparison outputs for their states by a ZQ calibration controller; and determining a resistance calibration direction according to the majority by the ZQ calibration controller so that the ZQ calibration controller generates a calibration code based on the resistance calibration direction and applies the calibration code to a resistance calibration unit to adjust the target voltage via the resistance calibration unit.

Abstract: An image sensor including a substrate, a trench isolation, a plurality of image sensing units, at least one phase detection unit, and an interconnection layer is provided. The trench isolation is in the substrate, and a plurality of active areas of the substrate are separated from each other by the trench isolation. The image sensing units and the at least one phase detection unit are in the active areas arranged in an array, and a sensing area of the at least one phase detection unit is smaller than a sensing area of each of the image sensing units. The interconnection layer is disposed on the image sensing units and the at least one phase detection unit. In addition, a method of fabricating an image sensor is also provided.

Abstract: An image sensor including a substrate, a trench isolation, a plurality of image sensing units, at least one phase detection unit, and an interconnection layer is provided. The trench isolation is in the substrate, and a plurality of active areas of the substrate are separated from each other by the trench isolation. The image sensing units and the at least one phase detection unit are in the active areas arranged in an array, and a sensing area of the at least one phase detection unit is smaller than a sensing area of each of the image sensing units. The interconnection layer is disposed on the image sensing units and the at least one phase detection unit. In addition, a method of fabricating an image sensor is also provided.

Abstract: An example of the invention provides a digital delay unit that is made up of a plurality of NAND gates. The digital delay unit includes a first delay path and a second delay path. The first delay path is coupled between a first input terminal and an output terminal to provide a basic time delay which is caused by one NAND gate. The second delay path is coupled between a second input terminal and the output terminal to provide at least three basic time delays.

Abstract: An example of the invention provides a digital delay unit that is made up of a plurality of NAND gates. The digital delay unit includes a first delay path and a second delay path. The first delay path is coupled between a first input terminal and an output terminal to provide a basic time delay which is caused by one NAND gate. The second delay path is coupled between a second input terminal and the output terminal to provide at least three basic time delays.