Patents by Inventor Yu-Hsun CHIH

Yu-Hsun CHIH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230268367
    Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Inventors: Tsung-Wei HUANG, Chao-Ching CHANG, Yun-Wei CHENG, Chih-Lung CHENG, Yen-Chang CHEN, Wen-Jen TSAI, Cheng Han LIN, Yu-Hsun CHIH, Sheng-Chan LI, Sheng-Chau CHEN
  • Patent number: 11652124
    Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.
    Type: Grant
    Filed: October 14, 2020
    Date of Patent: May 16, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tsung-Wei Huang, Chao-Ching Chang, Yun-Wei Cheng, Chih-Lung Cheng, Yen-Chang Chen, Wen-Jen Tsai, Cheng Han Lin, Yu-Hsun Chih, Sheng-Chan Li, Sheng-Chau Chen
  • Publication number: 20220115421
    Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.
    Type: Application
    Filed: October 14, 2020
    Publication date: April 14, 2022
    Inventors: Tsung-Wei HUANG, Chao-Ching CHANG, Yun-Wei CHENG, Chih-Lung CHENG, Yen-Chang CHEN, Wen-Jen TSAI, Cheng Han LIN, Yu-Hsun CHIH, Sheng-Chan LI, Sheng-Chau CHEN