Abstract: A system may include reception of a selection of a set of one or more elements of a data visualization, the set associated with a measure and each of the one or more elements associated with a value of the measure for a respective combination of one or more dimension members, reception of an instruction to create a second set of one or more elements associated with a calculated measure, where a value of the calculated measure for a respective combination is based on two values of the measure for the respective combination, and where a first value of the two values of the measure is associated with a first time and a second value of the two values of the measure is associated with a second time, and automatic generation of a query to produce the value of the calculated measure for each of the combinations

Abstract: A system may include reception of a selection of a set of one or more elements of a data visualization, the set associated with a measure and each of the one or more elements associated with a value of the measure for a respective combination of one or more dimension members, reception of an instruction to create a second set of one or more elements associated with a calculated measure, where a value of the calculated measure for a respective combination is based on two values of the measure for the respective combination, and where a first value of the two values of the measure is associated with a first time and a second value of the two values of the measure is associated with a second time, and automatic generation of a query to produce the value of the calculated measure for each of the combinations.

Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.

Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.

Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.

Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.

Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.

Abstract: A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.