Patents by Inventor Yu-Hua Kao Lin

Yu-Hua Kao Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF PREPARING SILICON-ON-INSULATOR SUBSTRATES PARTICULARLY SUITED FOR MICROWAVE APPLICATIONS
    Publication number: 20030082886
    Abstract: A method of directly and indirectly bonding a microwave substrate 14 and a silicon substrate 12 is described. The method for directly bonding a silicon substrate includes the steps of cleaning the microwave substrate and cleaning the silicon substrate. Then, the microwave substrate and the silicon substrate are stacked together. The stack is placed in a furnace. The temperature of the furnace is increased to a predetermined temperature at a predetermined rate. The temperature of the furnace is reduced at a second predetermined rate. The method of indirectly bonding includes sputtering a silicon dioxide layer on the microwave substrate and silicon substrate prior to placing them together.
    Type: Application
    Filed: March 16, 2000
    Publication date: May 1, 2003
    Inventors: Hector J. De Los Santos, Yu-Hua Kao Lin
  • Method of preparing silicon-on-insulator substrates particularly suited for microwave applications
    Patent number: 6548375
    Abstract: A method of directly and indirectly bonding a microwave substrate 14 and a silicon substrate 12 is described. The method for directly bonding a silicon substrate includes the steps of cleaning the microwave substrate and cleaning the silicon substrate. Then, the microwave substrate and the silicon substrate are stacked together. The stack is placed in a furnace. The temperature of the furnace is increased to a predetermined temperature at a predetermined rate. The temperature of the furnace is reduced at a second predetermined rate. The method of indirectly bonding includes sputtering a silicon dioxide layer on the microwave substrate and silicon substrate prior to placing them together.
    Type: Grant
    Filed: March 16, 2000
    Date of Patent: April 15, 2003
    Assignee: Hughes Electronics Corporation
    Inventors: Héctor J. De Los Santos, Yu-Hua Kao Lin
  • Method of fabricating a microwave microstrip/waveguide transition structure
    Patent number: 6467152
    Abstract: A microwave microstrip/waveguide transition structure includes a substrate, an elongated microstrip layer residing on a surface of the substrate, and an elongated integral hollow waveguide on the surface of the substrate. The microstrip layer and a side of the hollow waveguide constitute a single continuous piece of metal. The transition structure is fabricated by providing a substrate, depositing a metallic layer on the substrate, and depositing a metallic hollow housing continuous with a portion of a length of the metallic layer. The metallic hollow waveguide bounded by the metallic layer and the metallic hollow housing and having a contained volume therewithin is thereby defined.
    Type: Grant
    Filed: December 11, 1999
    Date of Patent: October 22, 2002
    Assignee: Hughes Electronics Corp.
    Inventors: Hector J. De Los Santos, Yu-Hua Kao Lin, Andrew H. Kwon, Eric D. Ditmars, John R. Dunwoody