Abstract: The present invention relates to novel phosphor mixtures and to a light-emitting device which comprises at least one of the novel phosphor mixtures. The phosphor mixtures can be used in phosphor-converted LEDs with a semiconductor that emits in the violet spectral region. The present invention furthermore relates to a lighting system which may comprise the light-emitting devices according to the invention, and to a dynamic lighting system. The present invention furthermore relates to a process for the preparation of the phosphor mixtures according to the invention and to the use thereof in light-emitting devices for use in general lighting and/or in specialty lighting.

Abstract: The present invention relates to novel phosphor mixtures and to a light-emitting device which comprises at least one of the novel phosphor mixtures. The phosphor mixtures can be used in phosphor-converted LEDs with a semiconductor that emits in the violet spectral region. The present invention furthermore relates to a lighting system which may comprise the light-emitting devices according to the invention, and to a dynamic lighting system. The present invention furthermore relates to a process for the preparation of the phosphor mixtures according to the invention and to the use thereof in light-emitting devices for use in general lighting and/or in specialty lighting.

Abstract: A phosphor composition and a white light emitting device using the same are disclosed. The white light emitting device includes a blue light emitting diode and a phosphor composition disposed on the blue light emitting diode, wherein the phosphor composition includes a yellow lanthanum silicon nitride, a yellow ?-SiAlON and a red CaAlSiN, and the weight proportion of the yellow lanthanum silicon nitride, the yellow ?-SiAlON and the red CaAlSiN is 1: 1:0.3˜0.45.

Abstract: A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is formed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so that the LED chip is electrically connected to the metal circuit.

Abstract: A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.

Abstract: A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.

Abstract: A semiconductor process is described as follows. A material layer is provided on a substrate. A low-temperature oxidation treatment is performed to the material layer. A photoresist layer is formed on the material layer after the low-temperature oxidation treatment. The photoresist layer is patterned.

Abstract: A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is formed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so that the LED chip is electrically connected to the metal circuit.

Abstract: A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.

Abstract: A light emitting diode (LED) device including a transparent substrate, a plurality of LED chips, a circuit, and a transparent encapsulant is provided. The LED chips are fixed on the transparent substrate, and utilized for radiating at least a light beam. The circuit is disposed on the transparent substrate and electrically connected to the LED chips. The transparent encapsulant is utilized for packaging the LED chips. The light beam of the LED chips can propagate from two opposite sides of the transparent substrate. Blue LED chips and the circuit of the transparent substrate can be directly soldered, and the phosphors are arranged to convert the wavelength of blue light, so a dual-side white light emitting device can therefore be provided.

Abstract: A white-light emitting device comprises a substrate, a short wavelength light source, a protective layer, a first structure, and a second structure. The short wavelength light source is disposed on the substrate for generating a first light, and the protective layer covering the short wavelength light source is pervious to the first light. The first structure is disposed on the protective layer for generating a second light, in which the first structure includes a first quantum well and a transmission layer. The second structure is disposed on the first structure for generating a third light. Finally, the first light, the second light, and the third light are mixed to generate a white light.

Abstract: A light-emitting diode (LED) and manufacturing method thereof are disclosed. The LED includes a transparent substrate, a plurality of transparent conductive layers, a plurality of metal circuits, and a LED chip. The LED chip is suitable for emitting a light and a portion of the light emits toward the transparent substrate. The manufacturing method of LED includes the following steps. First, a transparent conductive layer is formed on the transparent substrate. Next, a conductive pattern is fromed by etching transparent conductive layer. The intersection metal circuit is formed by disposing the metal on a portion of the transparent conductive layer. Finally, the LED chip is disposed on the metal circuit so tat the LED chip is electrically connected to the metal circuit.

Abstract: A light emitting device and an electronic device using the same are provided. The light emitting device includes a light emitting chip having a wavelength between 460 nm and 650 nm and phosphor powders, in which the phosphor powders can be stimulated by light emitted from the chip to emit light with a wavelength between 700 nm and 1200 nm. The phosphor powders are selected from the group consisting of Cu-doped CdS, Cu-doped SeS, Cu-doped CdTe and combinations thereof.

Abstract: A light emitting diode package and a fabrication method thereof are provided. The light emitting diode package comprises a lead frame, having a frame body and a conductive layer covering the frame body. A reflector has a first portion and a second portion sandwiching the lead frame, wherein the first portion has a depression to expose the lead frame, and a light emitting diode chip is disposed on the lead frame in the depression. The fabrication method comprises forming a frame body and forming a conductive layer covering the frame body to form a lead frame. A first portion and a second portion of a reflector are formed to sandwich the lead frame, wherein the first portion has a depression to expose the lead frame. A light emitting diode chip is disposed on the lead frame in the depression.

Abstract: A light emitting diode (LED) device including a transparent substrate, a plurality of LED chips, a circuit, and a transparent encapsulant is provided. The LED chips are fixed on the transparent substrate, and utilized for radiating at least a light beam. The circuit is disposed on the transparent substrate and electrically connected to the LED chips. The transparent encapsulant is utilized for packaging the LED chips. The light beam of the LED chips can propagate from two opposite sides of the transparent substrate. Blue LED chips and the circuit of the transparent substrate can be directly soldered, and the phosphors are arranged to convert the wavelength of blue light, so a dual-side white light emitting device can therefore be provided.

Abstract: A method for forming a photoresist layer is provided. The method includes following steps. A wafer is provided in a semiconductor machine. The wafer is spun at a first spin speed. A pre-wet solvent is dispensed on the spinning wafer by using a nozzle disposed at a fixed position. The pre-wet solvent then stops dispensing. The spin speed of the wafer is adjusted from the first spin speed to a second spin speed which is faster than the first spin speed. Thereafter, a photoresist layer is coated on the wafer.

Abstract: A method for forming a photoresist layer is provided. The method includes following steps. A wafer is provided in a semiconductor machine. The wafer is spun at a first spin speed. A pre-wet solvent is dispensed on the spinning wafer by using a nozzle disposed at a fixed position. The pre-wet solvent then stops dispensing. The spin speed of the wafer is adjusted from the first spin speed to a second spin speed which is faster than the first spin speed. Thereafter, a photoresist layer is coated on the wafer.

Abstract: A white-light emitting device comprises a substrate, a short wavelength light source, a protective layer, a first structure, and a second structure. The short wavelength light source is disposed on the substrate for generating a first light, and the protective layer covering the short wavelength light source is pervious to the first light. The first structure is disposed on the protective layer for generating a second light, in which the first structure includes a first quantum well and a transmission layer. The second structure is disposed on the first structure for generating a third light. Finally, the first light, the second light, and the third light are mixed to generate a white light.

Abstract: A compound represented by the following formula: SrxMyAlzSi12?zN16?zO2+z wherein, M is selected from the group consisting of rare earth elements and yttrium, x>0, y>0, x+y=2, and 0?z?5. The compound may be used as a phosphor. It emits a visible light upon being excited by a blue light and/or an ultra-violet light. When M is Eu, the compound emits a yellow-green light upon being excited by a blue light and/or an ultra-violet light.