Abstract: A multiple die container load port may include a housing with an opening, and an elevator to accommodate a plurality of different sized die containers. The multiple die container load port may include a stage supported by the housing and moveable within the opening of the housing by the elevator. The stage may include one or more positioning mechanisms to facilitate positioning of the plurality of different sized die containers on the stage, and may include different portions movable by the elevator to accommodate the plurality of different sized die containers. The multiple die container load port may include a position sensor to identify one of the plurality of different sized die containers positioned on the stage.

Abstract: A smart socket is provided, including a main body and a smart system. The main body has at least two slots, each of the at least two slots extends linearly along an extension direction, each of the at least two slots is for a pin of a plug to insert thereinto along an insertion direction and slidable along the extension direction, and the extension direction is perpendicular to the insertion direction. The smart system can communicate and interact with an electronic device, and the smart system can switch the electronic device on or off remotely.

Abstract: A needle-free connection device include a casing, a connection base, a slide element and a resilient valve. The casing includes a first hollow tube having a first liquid transmission channel. The connection base is connected to the casing. The resilient valve includes a second hollow tube and a plug connected thereto, wherein the second hollow tube has a second liquid transmission channel, a third liquid transmission channel is formed between the second hollow tube and the plug, and a fourth liquid transmission channel is formed between the connection base and the plug. The first to the fourth liquid transmission channel are intercommunicated with each other. The connection base includes a third hollow tube, and a fourth liquid transmission channel is formed between the plug and the third hollow tube. The needle-free connection device provides a liquid transmission path sequentially passing through the first to the fourth liquid transmission channel.

Abstract: A smart socket is provided, including a main body and a smart system. The main body has at least two slots, each of the at least two slots extends linearly along an extension direction, each of the at least two slots is for a pin of a plug to insert thereinto along an insertion direction and slidable along the extension direction, and the extension direction is perpendicular to the insertion direction. The smart system can communicate and interact with an electronic device, and the smart system can switch the electronic device on or off remotely.

Abstract: A needle-free connection device include a casing, a connection base, a slide element and a resilient valve. The casing includes a first hollow tube having a first liquid transmission channel. The connection base is connected to the casing. The resilient valve includes a second hollow tube and a plug connected thereto, wherein the second hollow tube has a second liquid transmission channel, a third liquid transmission channel is formed between the second hollow tube and the plug, and a fourth liquid transmission channel is formed between the connection base and the plug. The first to the fourth liquid transmission channel are intercommunicated with each other. The connection base includes a third hollow tube, and a fourth liquid transmission channel is formed between the plug and the third hollow tube. The needle-free connection device provides a liquid transmission path sequentially passing through the first to the fourth liquid transmission channel.

Abstract: A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD protection device and a second doped region coupled to a supply voltage for passing an ESD current from the second doped region to the first doped region to turn on the ESD protection device for dissipating the ESD current during an ESD event. The resistor well has an impurity density lower than that of the first and second doped regions for increasing resistance therebetween.

Abstract: This invention discloses an electrostatic discharge (ESD) protection circuit that comprises a substrate of a predetermined type, at least one MOS transistor being coupled to a pad of an integrated circuit for dissipating an ESD current from the pad during an ESD event, a substrate contact region, and at least one floating diffusion region formed in a substrate area between the MOS transistor and the substrate contact region for reducing a trigger-on voltage of the MOS transistor during the ESD event.

Abstract: A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD protection device and a second doped region coupled to a supply voltage for passing an ESD current from the second doped region to the first doped region to turn on the ESD protection device for dissipating the ESD current during an ESD event. The resistor well has an impurity density lower than that of the first and second doped regions for increasing resistance therebetween.

Abstract: A divided drain implant structure for transistors used for electrostatic discharge protection is disclosed. At least two transistors are formed close to each other on a substrate with their gates and sources coupled together and with the drains placed next to each other and separated as a divided drain implant structure. The divided drain implant structure further comprises at least two drain implant regions separated by a lightly doped drain region and a halo implant region formed underneath. At least one of the drain implant regions is coupled to an input/output pad of a circuit.

Abstract: A divided drain implant structure for transistors used for electrostatic discharge protection is disclosed. At least two transistors are formed close to each other on a substrate with their gates and sources coupled together and with the drains placed next to each other and separated as a divided drain implant structure. The divided drain implant structure further comprises at least two drain implant regions separated by a lightly doped drain region and a halo implant region formed underneath. At least one of the drain implant regions is coupled to an input/output pad of a circuit.

Abstract: An electrostatic discharge (ESD) protection circuit is provided. The circuit is coupled between a first and a second node for dissipating an ESD current. The circuit comprises a first transistor formed on a substrate with its gate and a first diffusion region coupled to the first node for receiving the ESD current, and a second transistor coupled in series with the first transistor at its second diffusion region and with the second transistor's gate coupled to the second node for dissipating the ESD current therethrough, wherein the first transistor provides a N/P junction close to its diffusion regions for directing the ESD current through a parasitic transistor in the substrate and the second transistor.

Abstract: This invention discloses an electrostatic discharge (ESD) protection circuit that comprises a substrate of a predetermined type, at least one MOS transistor being coupled to a pad of an integrated circuit for dissipating an ESD current from the pad during an ESD event, a substrate contact region, and at least one floating diffusion region formed in a substrate area between the MOS transistor and the substrate contact region for reducing a trigger-on voltage of the MOS transistor during the ESD event.