Abstract: A method of manufacturing a snapback electrostatic discharge (ESD) protection circuit includes fabricating a first well in a substrate, the first well extending in a first direction, and having a first dopant type, fabricating a drain region of a transistor in the first well, the drain region having a second dopant type, fabricating a source region of the transistor in the first well, the source region extending in the first direction, having the second dopant type, and being separated from the drain region in a second direction, fabricating a second well in the first well, the second well extending in the first direction, having the second dopant type, and being adjacent to a portion of the drain region, and fabricating a gate region of the transistor, the gate region being between the drain region and the source region, and being over the first well and the substrate.

Abstract: An electrostatic discharge (ESD) protection apparatus and method for fabricating the same are disclosed herein. In some embodiments, the ESD protection apparatus, comprises: a plurality of transistors patterned on a semiconductor substrate during a front-end-of-line (FEOL) process, metal interconnects formed on top of the plurality of transistors during a back-end-of-line (BEOL) process and configured to interconnect the plurality of transistors, and a plurality of passive components formed under the semiconductor substrate in a backside layer during a backside a back-end-of-line (B-BEOL) process, wherein the plurality of passive components are connected to the plurality of transistors through a plurality of vias.

Abstract: An electrostatic discharge (ESD) protection apparatus and method for fabricating the same are disclosed herein. In some embodiments, the ESD protection apparatus, comprises: a plurality of transistors patterned on a semiconductor substrate during a front-end-of-line (FEOL) process, metal interconnects formed on top of the plurality of transistors during a back-end-of-line (BEOL) process and configured to interconnect the plurality of transistors, and a plurality of passive components formed under the semiconductor substrate in a backside layer during a backside a back-end-of-line (B-BEOL) process, wherein the plurality of passive components are connected to the plurality of transistors through a plurality of vias.

Abstract: A substrate includes a dielectric structure, a conductive layer, a first hole and a second hole. The conductive layer is stacked on the dielectric structure. The first hole extends from a top surface of the conductive layer and exposes the dielectric structure. The second hole is spaced apart from the first hole, extends from the top surface of the conductive layer and exposes the dielectric structure. A first depth of the first hole is substantially equal to a second depth of the second hole. An elevation of a topmost end of the first hole is different from an elevation of a topmost end of the second hole.

Abstract: An electrostatic discharge (ESD) protection circuit includes a first and second diode in a semiconductor wafer, an ESD clamp circuit and a first conductive structure on a backside of a semiconductor wafer. The first diode is coupled between an input output (IO) pad and a first node. The second diode is coupled to the first diode, and coupled between the IO pad and a second node. The ESD clamp circuit is in the semiconductor wafer, coupled to the first and second node, and between the first and second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer that is coupled to a reference voltage supply. The second diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit. The first conductive structure is configured to provide a reference voltage to the first signal tap region.

Abstract: An apparatus for providing electrostatic discharge (ESD) immunity and a method for fabricating the same are disclosed herein. The apparatus comprises a field effect transistor (FET) formed on a semiconductor substrate in a front-end-of-line (FEOL) layer during an FEOL process, a metal interconnect layer formed on top of the FEOL layer during a back-end-of-line (BEOL) process, wherein the metal interconnect layer comprises a plurality interconnects configured to interconnect the FET to a plurality of components formed on the semiconductor substrate, a power delivery network (PDN) formed under the semiconductor substrate in a backside layer during a backside back-end-of-line (B-BEOL) process, and a through substrate resistive component formed between the FEOL and B-BEOL layers, wherein a first contact of the through substrate resistive component is connected to a drain terminal of the FET and second contact is connected, through the PDN, to a power supply rail.

Abstract: An apparatus for providing electrostatic discharge (ESD) immunity and a method for fabricating the same are disclosed herein. The apparatus comprises a field effect transistor (FET) formed on a semiconductor substrate in a front-end-of-line (FEOL) layer during an FEOL process, a metal interconnect layer formed on top of the FEOL layer during a back-end-of-line (BEOL) process, wherein the metal interconnect layer comprises a plurality interconnects configured to interconnect the FET to a plurality of components formed on the semiconductor substrate, a power delivery network (PDN) formed under the semiconductor substrate in a backside layer during a backside back-end-of-line (B-BEOL) process, and a through substrate resistive component formed between the FEOL and B-BEOL layers, wherein a first contact of the through substrate resistive component is connected to a drain terminal of the FET and second contact is connected, through the PDN, to a power supply rail.

Abstract: An electrostatic discharge (ESD) protection circuit includes a first diode, a second diode, an ESD clamp circuit and a first conductive structure on a backside of a semiconductor wafer, and being coupled to the first voltage supply. The first diode is in the semiconductor wafer, and coupled between an IO pad and a first node. The second diode is in the semiconductor wafer, coupled to the first diode and coupled between the IO pad and a second node. The ESD clamp circuit is in the semiconductor wafer, coupled between the first node and the second node, and further coupled to the first and second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer that is coupled to a first voltage supply. The first diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit.

Abstract: An electrostatic discharge (ESD) protection apparatus and method for fabricating the same are disclosed herein. In some embodiments, the ESD protection apparatus, comprises: a plurality of transistors patterned on a semiconductor substrate during a front-end-of-line (FEOL) process, metal interconnects formed on top of the plurality of transistors during a back-end-of-line (BEOL) process and configured to interconnect the plurality of transistors, and a plurality of passive components formed under the semiconductor substrate in a backside layer during a backside a back-end-of-line (B-BEOL) process, wherein the plurality of passive components are connected to the plurality of transistors through a plurality of vias.

Abstract: An electrostatic discharge (ESD) protection apparatus and method for fabricating the same are disclosed herein. In some embodiments, the ESD protection apparatus, comprises: a plurality of transistors patterned on a semiconductor substrate during a front-end-of-line (FEOL) process, metal interconnects formed on top of the plurality of transistors during a back-end-of-line (BEOL) process and configured to interconnect the plurality of transistors, and a plurality of passive components formed under the semiconductor substrate in a backside layer during a backside a back-end-of-line (B-BEOL) process, wherein the plurality of passive components are connected to the plurality of transistors through a plurality of vias.

Abstract: An electrostatic discharge (ESD) protection circuit includes a first diode, a second diode, an ESD clamp circuit and a first conductive structure on a backside of a semiconductor wafer, and being coupled to the first voltage supply. The first diode is in the semiconductor wafer, and coupled between an IO pad and a first node. The second diode is in the semiconductor wafer, coupled to the first diode and coupled between the IO pad and a second node. The ESD clamp circuit is in the semiconductor wafer, coupled between the first node and the second node, and further coupled to the first and second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer that is coupled to a first voltage supply. The first diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit.

Abstract: An electrostatic discharge (ESD) protection circuit includes a first diode, a second diode and an ESD clamp circuit. The first diode is in a semiconductor wafer, and is coupled to an input output (IO) pad. The second diode is in the semiconductor wafer, and is coupled to the first diode and the TO pad. The ESD clamp circuit is in the semiconductor wafer, and is coupled to the first diode and the second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer. The first signal tap region is coupled to a first voltage supply. The first diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit.

Abstract: A temperature control method, a memory storage apparatus, and a memory control circuit unit are disclosed. The method includes: detecting a system parameter of the memory storage apparatus, and the system parameter reflects wear of a rewritable non-volatile memory module in the memory storage apparatus; determining a temperature control threshold value according to the system parameter; and performing a temperature reducing operation in response to a temperature of the memory storage apparatus reaching the temperature control threshold value to reduce the temperature of the memory storage apparatus.

Abstract: An electrostatic discharge (ESD) protection apparatus and method for fabricating the same are disclosed herein. In some embodiments, the ESD protection apparatus, comprises: a plurality of transistors patterned on a semiconductor substrate during a front-end-of-line (FEOL) process, metal interconnects formed on top of the plurality of transistors during a back-end-of-line (BEOL) process and configured to interconnect the plurality of transistors, and a plurality of passive components formed under the semiconductor substrate in a backside layer during a backside a back-end-of-line (B-BEOL) process, wherein the plurality of passive components are connected to the plurality of transistors through a plurality of vias.

Abstract: An apparatus for providing electrostatic discharge (ESD) immunity and a method for fabricating the same are disclosed herein. The apparatus comprises a field effect transistor (FET) formed on a semiconductor substrate in a front-end-of-line (FEOL) layer during an FEOL process, a metal interconnect layer formed on top of the FEOL layer during a back-end-of-line (BEOL) process, wherein the metal interconnect layer comprises a plurality interconnects configured to interconnect the FET to a plurality of components formed on the semiconductor substrate, a power delivery network (PDN) formed under the semiconductor substrate in a backside layer during a backside back-end-of-line (B-BEOL) process, and a through substrate resistive component formed between the FEOL and B-BEOL layers, wherein a first contact of the through substrate resistive component is connected to a drain terminal of the FET and second contact is connected, through the PDN, to a power supply rail.

Abstract: A snapback electrostatic discharge (ESD) protection circuit includes a first well in a substrate, a drain region of a transistor, a source region of the transistor, a gate region of the transistor, and a second well embedded in the first well. The first well has a first dopant type. The drain region is in the first well, and has a second dopant type different from the first dopant type. The source region is in the first well, has the second dopant type, and is separated from the drain region in a first direction. The gate region is over the first well and the substrate. The second well is embedded in the first well, and is adjacent to a portion of the drain region. The second well has the second dopant type.

Abstract: An electrostatic discharge (ESD) protection circuit includes a first diode, a second diode and an ESD clamp circuit. The first diode is in a semiconductor wafer, and is coupled to an input output (IO) pad. The second diode is in the semiconductor wafer, and is coupled to the first diode and the IO pad. The ESD clamp circuit is in the semiconductor wafer, and is coupled to the first diode and the second diode. The ESD clamp circuit includes a first signal tap region in the semiconductor wafer. The first signal tap region is coupled to a first voltage supply. The first diode is coupled to and configured to share the first signal tap region with the ESD clamp circuit.