Patents by Inventor Yu-Jane Mei

Yu-Jane Mei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a planarized dielectric layer
    Patent number: 5899751
    Abstract: A method for forming a planarized dielectric layer comprising the steps of first dissolving hydrogen silsesquoxane (HSQ) in a solvent to form a solution, then spreading the solution over a silicon substrate. Next, the solvent is allowed to evaporate, and then heated-treated using a temperature of between 150.degree. C. to 400.degree. C. to form a silica-coated dielectric layer. Finally, a fluoride implant treatment (FIT) is performed to create a dielectric layer having a better thermal stability, more stable dielectric constant and a lower leakage current.
    Type: Grant
    Filed: December 29, 1997
    Date of Patent: May 4, 1999
    Assignee: United Microelectronics Corp.
    Inventors: Ting-Chang Chang, Yu-Jane Mei