Abstract: A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes exposing lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers within a source/drain region of the semiconductor device. In some examples, the method further includes etching the exposed lateral surfaces of the plurality of dummy layers to form recesses and forming an inner spacer within each of the recesses, where the inner spacer includes a sidewall profile having a convex shape. In some cases, and after forming the inner spacer, the method further includes performing a sheet trim process to tune the sidewall profile of the inner spacer such that the convex shape of the sidewall profile becomes a substantially vertical sidewall surface after the sheet trim process.

Abstract: The method in accordance with the present invention has steps of: preparing a hydrogen producing device with a high gravitational rotating packed bed, initiating the device, adjusting the temperature of the device, inputting a reagent gas and a liquid vaporized for mixing with the reagent gas into a reagent mixture, and passing the reagent mixture through the device to obtain hydrogen.

Abstract: The method in accordance with the present invention has steps of: preparing a hydrogen producing device with a high gravitational rotating packed bed, initiating the device, adjusting the temperature of the device, inputting a reagent gas and a liquid vaporized for mixing with the reagent gas into a reagent mixture, and passing the reagent mixture through the device to obtain hydrogen.