Patents by Inventor Yu-Jie Huang
Yu-Jie Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230280304Abstract: A bio-field effect transistor (bioFET) system includes a bioFET configured to receive to a first voltage signal and output a current signal, where the current signal varies exponentially with respect to the first voltage signal. A logarithmic current-to-time converter is connected to the bioFET and is configured to receive the current signal and convert the current signal to a time domain signal. The time domain signal varies logarithmically with respect to the current signal, such that the time domain signal varies linearly with respect to the first voltage signal.Type: ApplicationFiled: March 1, 2023Publication date: September 7, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Jie Huang, Jui-Cheng Huang
-
Patent number: 11747298Abstract: A biosensor system package includes: a transistor structure in a semiconductor layer having a front side and a back side, the transistor structure comprising a channel region; a multi-layer interconnect (MLI) structure on the front side of the semiconductor layer, the transistor structure being electrically connected to the MLI structure; a carrier substrate on the MLI structure; a first through substrate via (TSV) structure extending though the carrier substrate and configured to provide an electrical connection between the MLI structure and a separate die; a buried oxide (BOX) layer on the back side of the semiconductor layer, wherein the buried oxide layer has an opening on the back side of the channel region, and an interface layer covers the back side over the channel region; and a microfluidic channel cap structure attached to the buried oxide layer.Type: GrantFiled: November 11, 2020Date of Patent: September 5, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Allen Timothy Chang, Jui-Cheng Huang, Wen-Chuan Tai, Yu-Jie Huang
-
Publication number: 20230261668Abstract: A semiconductor circuit and a method of operating the same are provided. The semiconductor circuit comprises a first digital-to-analog converter configured to generate a first output current in response to a first binary code, and a second digital-to-analog converter configured to generate a second output current in response to a second binary code associated with the first binary code. The semiconductor circuit further comprises a first current-to-voltage converter configured to generate a first candidate voltage based on the first output current, and a second current-to-voltage converter configured to generate a second candidate voltage based on the second output current. The semiconductor circuit further comprises a multiplexer configured to output the target voltage based on the first candidate voltage or the second candidate voltage. The target voltage includes a configurable range associated with the second binary code.Type: ApplicationFiled: February 15, 2022Publication date: August 17, 2023Inventors: YU-JIE HUANG, MU-SHAN LIN, CHIEN-CHUN TSAI
-
Publication number: 20230251223Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.Type: ApplicationFiled: March 27, 2023Publication date: August 10, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Jie HUANG, Jui-Cheng HUANG, Cheng-Hsiang HSIEH
-
Patent number: 11686704Abstract: A biosensor system includes an array of biosensors with a plurality of electrodes situated proximate the biosensor. A controller is configured to selectively energize the plurality of electrodes to generate a DEP force to selectively position a test sample relative to the array of biosensors.Type: GrantFiled: February 10, 2021Date of Patent: June 27, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Jie Huang, Jui-Cheng Huang, Yi-Hsing Hsiao
-
Patent number: 11668671Abstract: A biosensor includes a semiconductor layer having a first surface and a second surface opposite to the first surface, a FET device in the semiconductor layer, an isolation layer over the first surface of the semiconductor layer, a dielectric layer over the isolation layer and the first surface of the semiconductor layer, and a pair of first electrodes and a pair of second electrodes over the dielectric layer and separated from each other. The isolation layer has a rectangular opening substantially aligned with the FET device. The rectangular opening has pair of first sides and a pair of second sides. An extending direction of the pair of first sides is perpendicular to an extending direction of the pair of second sides. The pair of first electrodes is disposed over the pair of first sides, and the pair of second electrodes is disposed over the pair of second sides.Type: GrantFiled: April 16, 2020Date of Patent: June 6, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yi-Hsing Hsiao, Jui-Cheng Huang, Yu-Jie Huang
-
Publication number: 20230123863Abstract: The present invention comprises a system and method for co-culturing glia cells and neurons in a combination of glia culture medium and neuron medium wherein the glia cells and neurons have cell morphology, cell reactions and/or cell interactions that exist in vivo after the co-culturing for up to about 21 days, up to about 30 days, up to about 40 days, up to about 45 days. Since the cell morphology, cell reaction and/or cell interaction of the co-culture are similar to those seen in vivo, the present system is capable of being configured as animal models for research, drug screening, testing and conducting clinical trials.Type: ApplicationFiled: June 30, 2020Publication date: April 20, 2023Inventors: Yi-Hsuan Lee, Chia-Chi Hung, Pei-Chien Hsu, Yu-Jie Huang
-
Patent number: 11614422Abstract: A biologically sensitive field effect transistor includes a substrate, a first control gate and a second control gate. The substrate has a first side and a second side opposite to the first side, a source region and a drain region. The first control gate is disposed on the first side of the substrate. The second control gate is disposed on the second side of the substrate. The second control gate includes a sensing film disposed on the second side of the substrate. A voltage biasing between the source region and the second control gate is smaller than a threshold voltage of the second control gate.Type: GrantFiled: December 28, 2020Date of Patent: March 28, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Jie Huang, Jui-Cheng Huang, Cheng-Hsiang Hsieh
-
Patent number: 11614421Abstract: A bio-field effect transistor (bioFET) system includes a bioFET configured to receive a first voltage signal and output a current signal. A logarithmic current-to-time converter is connected to the bioFET and is configured to receive the current signal and convert the current signal to a time domain signal. The time domain signal varies logarithmically with respect to the current signal, such that the time domain signal varies linearly with respect to the first voltage signal.Type: GrantFiled: May 8, 2020Date of Patent: March 28, 2023Assignee: Taiwan Semiconductor Manufacturing Company Ltd.Inventors: Yu-Jie Huang, Jui-Cheng Huang
-
Publication number: 20220390412Abstract: A biosensor includes a semiconductor layer having a first surface and a second surface opposite to the first surface, a FET device in the semiconductor layer, an isolation layer over the first surface of the semiconductor layer, a dielectric layer over the isolation layer and the first surface of the semiconductor layer, and a pair of first electrodes and a pair of second electrodes over the dielectric layer and separated from each other. The isolation layer has a rectangular opening substantially aligned with the FET device. The rectangular opening has pair of first sides and a pair of second sides. An extending direction of the pair of first sides is perpendicular to an extending direction of the pair of second sides. The pair of first electrodes is disposed over the pair of first sides, and the pair of second electrodes is disposed over the pair of second sides.Type: ApplicationFiled: August 8, 2022Publication date: December 8, 2022Inventors: YI-HSING HSIAO, JUI-CHENG HUANG, YU-JIE HUANG
-
Publication number: 20220381729Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.Type: ApplicationFiled: August 9, 2022Publication date: December 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tung-Tsun CHEN, Yi-Hsing HSIAO, Jui-Cheng HUANG, Yu-Jie HUANG
-
Publication number: 20220381733Abstract: A biosensor system includes an array of biosensors with a plurality of electrodes situated proximate the biosensor. A controller is configured to selectively energize the plurality of electrodes to generate a DEP force to selectively position a test sample relative to the array of biosensors.Type: ApplicationFiled: August 9, 2022Publication date: December 1, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Jie Huang, Jui-Cheng Huang, Yi-Hsing Hsiao
-
Publication number: 20220352451Abstract: A method of manufacturing an integrated circuit structure includes forming active regions, forming source/drain regions, and forming conductive segments resulting in a thermoelectric structure including a p-type region positioned on a front side of the substrate, an n-type region positioned on the front side of the substrate, and a wire on the front side of the substrate configured to electrically couple the p-type region to the n-type region. The method includes forming a first via configured to thermally couple the p-type region to a first power structure on a back side of the substrate, forming a second via configured to thermally couple the n-type region to a second power structure on the back side of the substrate, and electrically coupling an energy device to each of the first and second power structures.Type: ApplicationFiled: July 5, 2022Publication date: November 3, 2022Inventors: Yu-Jie HUANG, Chung-Hui CHEN, Jui-Cheng HUANG, Tung-Tsun CHEN
-
Publication number: 20220252543Abstract: A biosensor system includes an array of biosensors with a plurality of electrodes situated proximate the biosensor. A controller is configured to selectively energize the plurality of electrodes to generate a DEP force to selectively position a test sample relative to the array of biosensors.Type: ApplicationFiled: February 10, 2021Publication date: August 11, 2022Inventors: Yu-Jie Huang, Jui-Cheng Huang, Yi-Hsing Hsiao
-
Patent number: 11360073Abstract: A semiconductor device includes a circuit layer and a nanopore layer. The nanopore layer is formed on the circuit layer and is formed with a pore therethrough. The circuit layer includes a circuit unit configured to drive a biomolecule through the pore and to detect a current associated with a resistance of the nanopore layer, whereby a characteristic of the biomolecule can be determined using the currents detected by the circuit unit.Type: GrantFiled: June 11, 2020Date of Patent: June 14, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Kun-Lung Chen, Tung-Tsun Chen, Cheng-Hsiang Hsieh, Yu-Jie Huang, Jui-Cheng Huang
-
Patent number: 11320395Abstract: An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.Type: GrantFiled: June 14, 2020Date of Patent: May 3, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Hui Lin, Chun-Ren Cheng, Jui-Cheng Huang, Shih-Fen Huang, Tung-Tsun Chen, Yu-Jie Huang, Fu-Chun Huang
-
Publication number: 20220091646Abstract: In an embodiment, a circuit includes: an error amplifier; a temperature sensor, wherein the temperature sensor is coupled to the error amplifier; a discrete time controller coupled to the error amplifier, wherein the discrete time controller comprises digital circuitry; a multiple bits quantizer coupled to the discrete time controller, wherein the multiple bits quantizer produces a digital code output; and a heating array coupled to the multiple bits quantizer, wherein the heating array is configured to generate heat based on the digital code output.Type: ApplicationFiled: December 6, 2021Publication date: March 24, 2022Inventors: Jui-Cheng HUANG, Yi-Hsing Hsiao, Yu-Jie Huang, Tsung-Tsun Chen, Allen Timothy Chang
-
Publication number: 20220065812Abstract: An IC includes a source region and a drain region in a semiconductor layer. A channel region is between the source region and the drain region. A sensing well is on a back surface of the semiconductor layer and over the channel region. An interconnect structure is on a front surface of the semiconductor layer opposite the back surface of the semiconductor layer. A biosensing film lines the sensing well and contacts a bottom surface of the sensing well that is defined by the semiconductor layer. A coating of selective binding agent is over the biosensing film and configured to bind with a cardiac cell.Type: ApplicationFiled: August 31, 2020Publication date: March 3, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tung-Tsun CHEN, Yi-Hsing HSIAO, Jui-Cheng HUANG, Yu-Jie HUANG
-
Patent number: 11243184Abstract: Various bioFET sensor readout circuits and their methods of operation are described. A readout circuit includes a plurality of logic gates coupled in cascade, a delay extractor, and a counting module. Each logic gate of the plurality of logic gates includes at least one bioFET sensor. The delay extractor is designed to generate a pulse-width signal based on a time difference between an output signal from the plurality of logic gates and a reference signal. The counting module is designed to receive the pulse-width signal and output a digital count corresponding to a width of the pulse-width signal.Type: GrantFiled: December 31, 2019Date of Patent: February 8, 2022Inventors: Yu-Jie Huang, Jui-Cheng Huang
-
Patent number: 11209878Abstract: In an embodiment, a circuit includes: an error amplifier; a temperature sensor, wherein the temperature sensor is coupled to the error amplifier; a discrete time controller coupled to the error amplifier, wherein the discrete time controller comprises digital circuitry; a multiple bits quantizer coupled to the discrete time controller, wherein the multiple bits quantizer produces a digital code output; and a heating array coupled to the multiple bits quantizer, wherein the heating array is configured to generate heat based on the digital code output.Type: GrantFiled: June 14, 2019Date of Patent: December 28, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jui-Cheng Huang, Yi-Hsing Hsiao, Yu-Jie Huang, Tsung-Tsun Chen, Allen Timothy Chang