Patents by Inventor Yu-Jin Ahn

Yu-Jin Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220204440
    Abstract: Provided is a method of preparing an acrylonitrile dimer, the method including: supplying an acrylonitrile monomer, a phosphorus-based catalyst, an alcohol solvent, and an ionic liquid to a reactor to perform a dimerization reaction to prepare a single-phase dimerization reaction product (S10); supplying a reactor discharge stream including the dimerization reaction product to a first distillation column, separating the alcohol solvent and an unreacted acrylonitrile monomer from an upper discharge stream, and supplying a lower discharge stream including an acrylonitrile dimer, the ionic liquid, and the phosphorus-based catalyst to a second distillation column (S20); and separating an upper discharge stream including the acrylonitrile dimer and separating a lower discharge stream including the ionic liquid and the phosphorus-based catalyst, from the second distillation column (S30).
    Type: Application
    Filed: January 5, 2021
    Publication date: June 30, 2022
    Inventors: Hyun Chul JUNG, Sae Hume PARK, Won Seok KIM, Ji Ha KIM, Young Shil DO, Yu Jin AN, Wan Kyu OH, Jeong Heon AHN
  • Patent number: 11296134
    Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.
    Type: Grant
    Filed: August 6, 2020
    Date of Patent: April 5, 2022
    Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
  • Publication number: 20200365635
    Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.
    Type: Application
    Filed: August 6, 2020
    Publication date: November 19, 2020
    Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
  • Patent number: 10763287
    Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: September 1, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
  • Patent number: 10483305
    Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: November 19, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
  • Publication number: 20190296066
    Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.
    Type: Application
    Filed: June 13, 2019
    Publication date: September 26, 2019
    Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
  • Publication number: 20170301712
    Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.
    Type: Application
    Filed: June 30, 2017
    Publication date: October 19, 2017
    Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
  • Patent number: 9741756
    Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: August 22, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
  • Publication number: 20170092687
    Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.
    Type: Application
    Filed: December 8, 2016
    Publication date: March 30, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: JeongWook Ko, Hongki Kim, Younghoon Park, Wonje Park, Yu Jin Ahn, Junetaeg Lee
  • Patent number: 9559140
    Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.
    Type: Grant
    Filed: August 21, 2014
    Date of Patent: January 31, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JeongWook Ko, Hongki Kim, Younghoon Park, Wonje Park, Yu Jin Ahn, Junetaeg Lee
  • Patent number: 9117716
    Abstract: A method of fabricating an image sensor device includes forming an insulating layer on a substrate including a photodiode therein, and forming a wiring structure on the insulating layer. The wiring structure includes at least one wiring layer and at least one insulating interlayer. A cavity is formed extending into the wiring structure over the photodiode to expose a surface of the at least one insulating interlayer. The surface of the at least one insulating interlayer exposed by the cavity is modified to define a hydrophobic surface. Related systems and devices are also discussed.
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: August 25, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-jin Ahn, Min-young Jung
  • Publication number: 20150130005
    Abstract: Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region and a light-blocking region, the semiconductor layer including photoelectric conversion devices, a light-blocking layer on a surface of the semiconductor layer, color filters on the semiconductor layer and the light-blocking layer, and micro lenses on the color filters. The color filters are absent from an interface region between the light-receiving region and the light-blocking region.
    Type: Application
    Filed: August 21, 2014
    Publication date: May 14, 2015
    Inventors: JeongWook KO, Hongki KIM, Younghoon PARK, Wonje PARK, Yu Jin AHN, Junetaeg LEE
  • Publication number: 20140263962
    Abstract: An image sensor includes a substrate including a sensor array area, a pad area, and a circuit area, a wiring layer on the pad area, and a light-shielding pattern on the sensor array area. The sensor array area includes a first area including active pixels and a second area including optical back pixels. The wiring layer is apart from the substrate by a first distance on the pad area. The light-shielding pattern includes a first portion spaced apart from the substrate by a second distance less than the first distance, a second portion disposed between the first portion and the wiring layer and extending on the same level as the wiring layer, and a third portion disposed between the first portion and the second portion and integrally formed with the first portion and the second portion.
    Type: Application
    Filed: March 11, 2014
    Publication date: September 18, 2014
    Inventors: Yu-jin Ahn, Jong-cheol Shin, Min-ji Jung
  • Publication number: 20140264509
    Abstract: A method of fabricating an image sensor device includes forming an insulating layer on a substrate including a photodiode therein, and forming a wiring structure on the insulating layer. The wiring structure includes at least one wiring layer and at least one insulating interlayer. A cavity is formed extending into the wiring structure over the photodiode to expose a surface of the at least one insulating interlayer. The surface of the at least one insulating interlayer exposed by the cavity is modified to define a hydrophobic surface. Related systems and devices are also discussed.
    Type: Application
    Filed: June 3, 2014
    Publication date: September 18, 2014
    Inventors: Yu-jin Ahn, Min-young Jung
  • Patent number: 8765517
    Abstract: A method of fabricating an image sensor device includes forming an insulating layer on a substrate including a photodiode therein, and forming a wiring structure on the insulating layer. The wiring structure includes at least one wiring layer and at least one insulating interlayer. A cavity is formed extending into the wiring structure over the photodiode to expose a surface of the at least one insulating interlayer. The surface of the at least one insulating interlayer exposed by the cavity is modified to define a hydrophobic surface. Related systems and devices are also discussed.
    Type: Grant
    Filed: July 6, 2011
    Date of Patent: July 1, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-jin Ahn, Min-young Jung
  • Patent number: 8614113
    Abstract: An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: December 24, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yu-Jin Ahn, Duck-Hyung Lee, Jong-Cheol Shin, Chang-Rok Moon, Sang-Jun Choi, Eun-Kyung Park
  • Publication number: 20120252155
    Abstract: In a method of doping impurities, an amorphous layer is formed on a substrate. Impurities are implanted through a top surface of the amorphous layer to form a first doping region at an upper portion of the substrate. The first doping region and the amorphous layer are transformed into a second doping region and a recrystallized layer, respectively, by a laser annealing process. The recrystallized layer is removed.
    Type: Application
    Filed: March 23, 2012
    Publication date: October 4, 2012
    Inventors: Sang-Jun CHOI, June-Mo Koo, Duck-Hyung Lee, Jong-Cheol Shin, Yu-Jin Ahn, Eun-Kyung Park, Sun-E Park
  • Publication number: 20120077301
    Abstract: An image sensor and a method for fabricating the image sensor are provided. The method for fabricating the image sensor includes forming a first insulating layer on a semiconductor epitaxial layer having multiple pixel regions; patterning a portion of the semiconductor epitaxial layer and the first insulating layer in a boundary region between the pixel regions to form a trench; forming a buried insulating layer on the first insulating layer, filling the trench, the buried insulating layer having a planar top surface; forming a second insulating layer on the buried insulating layer; forming a first mask pattern on the second insulating layer, the first mask pattern defining an opening overlapping the trench; and performing an ion implantation process using the first mask pattern as an ion implantation mask to form a first type potential barrier region in a bottom of the trench.
    Type: Application
    Filed: September 22, 2011
    Publication date: March 29, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yu-Jin Ahn, Duck-Hyung Lee, Jong-Cheol Shin, Chang-Rok Moon, Sang-Jun Choi, Eun-Kyung Park
  • Publication number: 20120009719
    Abstract: A method of fabricating an image sensor device includes forming an insulating layer on a substrate including a photodiode therein, and forming a wiring structure on the insulating layer. The wiring structure includes at least one wiring layer and at least one insulating interlayer. A cavity is formed extending into the wiring structure over the photodiode to expose a surface of the at least one insulating interlayer. The surface of the at least one insulating interlayer exposed by the cavity is modified to define a hydrophobic surface. Related systems and devices are also discussed.
    Type: Application
    Filed: July 6, 2011
    Publication date: January 12, 2012
    Inventors: Yu-jin Ahn, Min-young Jung
  • Publication number: 20110008957
    Abstract: A metal interconnection method of a semiconductor device includes forming a copper layer on a semiconductor substrate and planarizing the copper layer. Two thermal treatments are performed at different temperatures between formation of the copper layer and planarization of the copper layer.
    Type: Application
    Filed: June 30, 2010
    Publication date: January 13, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sun-E Park, Younghoon Park, Joocheol Han, Jinkuk Chung, Kiho Kang, Yu Jin Ahn