Patents by Inventor Yu-Jin PYO

Yu-Jin PYO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor

Patent number: 9252244

Abstract: The inventive concepts provide methods of manufacturing a semiconductor device. The method includes patterning a substrate to form an active pattern, forming a gate pattern intersecting the active pattern, forming a gate spacer on a sidewall of the gate pattern, forming a growth-inhibiting layer covering an upper region of the gate pattern, and forming source/drain electrodes at opposite first and second sides of the gate pattern.

Type: Grant

Filed: September 26, 2014

Date of Patent: February 2, 2016

Assignee: SAMSUNG ELECTRONICS CO., LTD.

Inventors: JinBum Kim, Seong Hoon Jeong, Jeon Il Lee, Seokhoon Kim, Kwan Heum Lee, Choeun Lee, Yu-Jin Pyo
METHODS OF SELECTIVELY GROWING SOURCE/DRAIN REGIONS OF FIN FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN FIELD EFFECT TRANSISTOR

Publication number: 20150206955

Abstract: The inventive concepts provide methods of manufacturing a semiconductor device. The method includes patterning a substrate to form an active pattern, forming a gate pattern intersecting the active pattern, forming a gate spacer on a sidewall of the gate pattern, forming a growth-inhibiting layer covering an upper region of the gate pattern, and forming source/drain electrodes at opposite first and second sides of the gate pattern.

Type: Application

Filed: September 26, 2014

Publication date: July 23, 2015

Inventors: JinBum KIM, Seong Hoon JEONG, JEON IL LEE, SEOKHOON KIM, KWAN HEUM LEE, Choeun LEE, Yu-Jin PYO

Methods of selectively growing source/drain regions of fin field effect transistor and method of manufacturing semiconductor device including a fin field effect transistor

METHODS OF SELECTIVELY GROWING SOURCE/DRAIN REGIONS OF FIN FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING A FIN FIELD EFFECT TRANSISTOR