Abstract: A method of forming a semiconductor device includes: forming a semiconductor structure having source/drain regions, a fin disposed between the source/drain regions, and a dummy gate disposed on the fin and surrounded by a spacer; removing the dummy gate to form a gate trench which is defined by a trench-defining wall; forming a gate dielectric layer on the trench-defining wall; forming a work function structure on the gate dielectric layer; forming a resist layer to fill the gate trench; removing a top portion of the resist layer; removing the work function structure exposed from the resist layer using a wet chemical etchant; removing the resist layer; and forming a conductive gate in the gate trench.

Abstract: An image displaying device includes a planar display panel and a light penetrating unit. The planar display panel displays a plane image. The planar display panel at least includes a first pixel group, a second pixel group and a third pixel group. The second pixel group is located between the first pixel group and the third pixel group. When vision passes through the light penetrating unit toward the planar display panel, the vision acquires a second distance of a second imaging position within the plane image relevant to the second pixel group relative to the planar display panel being greater than a first distance of a first imaging position within the plane image relevant to the first pixel group relative to the planar display panel and a third distance of a third imaging position within the plane image relevant to the third pixel group relative to the planar display panel.

Abstract: The present disclosure provides display device. The display device includes a substrate having an upper surface and a circuit layer stacked on the upper surface of the substrate. The circuit layer includes a dielectric layer and a wire. The wire extends in a Y direction, wherein the Y direction is different from an X direction. The X direction is perpendicular to the upper surface of the substrate. The wire includes a plurality of conductive interconnects disposed in the dielectric layer, the adjacent conductive interconnects are electrically connected, and adjacent conductive interconnects are disposed at different distances from the upper surface of the substrate.

Abstract: A method of removing a photoresist layer is provided. An ion implantation process has been performed on the photoresist layer to transform a surface of the photoresist layer to a crust and a soft photoresist layer remains within the crust. The method includes performing a first removing step to remove the crust, such that the soft photoresist layer is exposed. Thereafter, a second removing step is performed to remove the soft photoresist layer. The first and the second removing steps are performed in difference chambers, and a temperature for performing the first removing step is lower than that for performing the second removing step and lower than a gasification temperature of a solvent in the soft photoresist layer.