Patents by Inventor Yu-Ju Hsiung

Yu-Ju Hsiung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for removing silicon nitride material
    Patent number: 5968846
    Abstract: A etchant recipe including a mixed gas of one of a CH.sub.x F.sub.y group and CO gas is used to etch a silicon nitride layer by plasma etching so as to form a thin polymer layer to protect a silicon layer under the silicon nitride layer from over-etching. Then a soft etching is performed to remove the thin polymer. The etchant recipe is, for example, used in forming a contact opening on a gate of a MOS transistor, on which a silicon nitride layer is formed.
    Type: Grant
    Filed: September 14, 1998
    Date of Patent: October 19, 1999
    Assignee: United Microelectronics Corp.
    Inventors: Hsiao-Pang Chou, Jung-Chao Chiao, Yu-Ju Hsiung