Abstract: A mobile communication device is provided and includes a plastic frame body, a metal outer frame, a metal inner frame and a first conductive spring. The plastic frame body has an opening, a first locking groove, a first inserting groove and a first protrusive portion formed between the first locking groove and the first inserting groove. The metal outer frame is locked to the first locking groove and fixed on the outside of the plastic frame body. The metal inner frame is inserted into the first inserting groove and fixed in the surroundings of the opening of the plastic frame body. Besides, the metal inner frame is electrically connected to a system ground plane. The first conductive spring clasps the first protrusive portion. The first conductive spring extends into the first locking groove and the first inserting groove so as to electrically connect the metal outer and inner frames.

Abstract: A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

Abstract: A mobile communication device is provided and includes a plastic frame body, a metal outer frame, a metal inner frame and a first conductive spring. The plastic frame body has an opening, a first locking groove, a first inserting groove and a first protrusive portion formed between the first locking groove and the first inserting groove. The metal outer frame is locked to the first locking groove and fixed on the outside of the plastic frame body. The metal inner frame is inserted into the first inserting groove and fixed in the surroundings of the opening of the plastic frame body. Besides, the metal inner frame is electrically connected to a system ground plane. The first conductive spring clasps the first protrusive portion. The first conductive spring extends into the first locking groove and the first inserting groove so as to electrically connect the metal outer and inner frames.

Abstract: A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

Abstract: A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

Abstract: A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.

Abstract: A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.