Abstract: A boron (B) layer may be formed as a passivation layer in a recess in which a vertical transfer gate is to be formed. The recess may then be filled with a gate electrode of the vertical transfer gate over the passivation layer (and/or one or more intervening layers) to form the vertical transfer gate. The passivation layer may be formed in the recess by epitaxial growth. The use of epitaxy to grow the passivation layer enables precise control over the profile, uniformity, and boron concentration in the passivation layer. Moreover, the use of epitaxy to grow the passivation layer may reduce the diffusion length of the passivation layer into the substrate of the pixel sensor, which provides increased area in the pixel sensor for the photodiode.

Abstract: An authorized access list generation method including: at least one network service providing device registering for an authorized access list notification service with a server, the authorized access list including at least one authorization related record of at least one legitimate user device; the legitimate user device outputting a user ID to the server to log into the server, and directly sending an access request to a target network service provider after logging into the server, and continuing to provide an IP address being used and a device ID to the server to update a corresponding authorization related record; and the target network service providing device comparing the IP address, stored in each authorization related record of the authorized access list, with the IP address of a user device issuing an access request, and rejecting the access request if no matched result is found.

Abstract: An authorized access list generation method including: at least one network service providing device registering for an authorized access list notification service with a server, the authorized access list including at least one authorization related record of at least one legitimate user device; the legitimate user device outputting a user ID to the server to log into the server, and directly sending an access request to a target network service provider after logging into the server, and continuing to provide an IP address being used and a device ID to the server to update a corresponding authorization related record; and the target network service providing device comparing the IP address, stored in each authorization related record of the authorized access list, with the IP address of a user device issuing an access request, and rejecting the access request if no matched result is found.

Abstract: A method includes: providing a first substrate on which a plurality of first semiconductor devices is formed; providing a second substrate on which a plurality of second semiconductor devices is formed; and coupling the first and second substrates by contacting respective dummy pads of the first and second substrates, wherein at least one of the dummy pads of the first and second substrates comprises plural peaks and valleys.