Abstract: The present invention provides an image sensor, a micro-lens array with different heights in a pixel size level in the image sensor, and a method for fabricating the micro-lens array with different heights in the pixel size level in the image sensor. The present invention uses three different optical masks to fabricate a micro-lens array with different heights in a pixel size level in an image sensor, and the micro-lens array with different heights in a pixel size level in the image sensor disclosed by the present invention is capable of providing the same depth of focus (or nearly the same depth of focus) for every photodiode in the image sensor with lower cost.

Abstract: A method for forming an image sensor includes: providing a first device including a visible light receiving portion and an infrared receiving portion; coating a first infrared cutoff filter on the first device; patterning plural photoresists on the first infrared cutoff filter located in the visible light receiving portion to form a second device; etching the second device until a first filter of the first device is exposed to form an infrared cutoff filter and an infrared cutoff filter grid located in the visible light receiving portion, in which the infrared cutoff filter grid is located on the infrared cutoff filter; filling a color filter in the infrared cutoff filter grid and forming a second filter on the first filter; and disposing a spacer layer and a micro-lens layer on the color filter and the second filter sequentially.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion comprises an infrared cutoff filter, plural primary color filters, and plural secondary color filters. The primary color filters and the secondary color filters are disposed on the infrared cutoff filter. The infrared receiving portion comprises plural first infrared pass filters and plural second infrared pass filters disposed on the first infrared pass filters. Each of the primary color filters occupies a first area. The secondary color filters and the second infrared pass filters occupy a second area substantially equal to the first area.

Abstract: A method of fabricating an image sensor includes the following steps. A substrate is provided. A first infrared filter is formed on a first region of the substrate. A second infrared filter is deposited on the substrate and the first infrared filter. The deposited second infrared filter covers the first infrared filter. The second infrared filter is lowered to expose the first infrared filter. The lowered second infrared filter is on a second region of the substrate and neighbors the first infrared filter.

Abstract: An image sensor is provided. The image sensor includes an infrared receiving portion and a visible light receiving portion. The infrared receiving portion is configured to receive infrared. The visible light receiving portion is configured to receive a visible light. The visible light receiving portion includes an infrared cutoff filter grid configured to purify the visible light.

Abstract: An image sensor structure is provided, which includes a substrate, a color filter and an infrared filter. The substrate has a first sensing, region for detecting visible light and a second sensing region neighboring the first sensing region for detecting infrared light. The color filter is vertically above the first sensing region. The infrared filter is vertically above the second sensing region and neighbors the color filter, in which one or more openings are defined for penetrating incident light.

Abstract: A method for fabricating a color filter structure is provided. The method includes: coating a transparent photoresist to form a transparent photoresist layer on a wafer; performing a photolithography process to form a dummy coating layer, in which the dummy coating layer includes plural columnar transparent photoresists and plural trenches sandwiched between two adjacent columnar transparent photoresists; and coating a color filter into the trenches to form the color filter structure.

Abstract: An image sensor is provided. The image sensor includes an infrared receiving portion and a visible light receiving portion. The infrared receiving portion is configured to receive infrared. The visible light receiving portion is configured to receive a visible light. The visible light receiving portion includes an infrared cutoff filter grid configured to purify the visible light.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion includes a color filter ball layer configured to collect the visible light. In some embodiments of the present invention, the infrared receiving portion includes an infrared pass filter ball layer configured to collect the infrared. In some other embodiments of the present invention, the infrared receiving portion includes a white filter ball layer configured to collect the infrared.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion comprises an infrared cutoff filter, plural primary color filters, and plural secondary color filters. The primary color filters and the secondary color filters are disposed on the infrared cutoff filter. The infrared receiving portion comprises plural first infrared pass filters and plural second infrared pass filters disposed on the first infrared pass filters. Each of the primary color filters occupies a first area. The secondary color filters and the second infrared pass filters occupy a second area substantially equal to the first area.

Abstract: A method of fabricating an image sensor includes the following steps. A semiconductor substrate is provided. A first photoresist structure is formed on the semiconductor substrate. A second photoresist structure is formed on the semiconductor substrate and covering the first photoresist structure. A third photoresist structure is formed on the semiconductor substrate and covering the first photoresist structure and the second photoresist structure. A first etching back process is performed to remove a first portion of the third photoresist structure above a top surface of the second photoresist structure. A second etching back process is performed to remove a portion of the second photoresist structure above a top surface of the first photoresist structure and to remove a second portion of the third photoresist structure above the top surface of the first photoresist structure.

Abstract: A method of fabricating an image sensor includes the following steps. A substrate is provided. A first infrared filter is formed on a first region of the substrate. A second infrared filter is deposited on the substrate and the first infrared filter. The deposited second infrared filter covers the first infrared filter. The second infrared filter is lowered to expose the first infrared filter. The lowered second infrared filter is on a second region of the substrate and neighbors the first infrared filter.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The visible light receiving portion includes a first white filter. The infrared receiving portion is configured to receive infrared. The infrared receiving portion includes an infrared photodiode, a second white filter, and an infrared pass filter. The second white filter is disposed on the infrared photodiode. The infrared pass filter is disposed on the infrared photodiode. The infrared is received by the infrared photodiode after passing through the second white filter and the infrared pass filter.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion includes an infrared cutoff filter ball layer configured to collect the visible light. In some embodiments of the present invention, the infrared receiving portion includes a micro-lens layer configured to collect the infrared. In some other embodiments of the present invention, the infrared receiving portion includes an infrared pass filter ball layer configured to collect the infrared.

Abstract: A method of fabricating an image sensor includes the following steps. A substrate is provided. A first infrared filter is formed on a first region of the substrate. A second infrared filter is deposited on the substrate and the first infrared filter. The deposited second infrared filter covers the first infrared filter. The second infrared filter is lowered to expose the first infrared filter. The lowered second infrared filter is on a second region of the substrate and neighbors the first infrared filter.

Abstract: A method of fabricating an image sensor includes the following steps. A substrate is provided. A first infrared filter is formed on a first region of the substrate. A second infrared filter is deposited on the substrate and the first infrared filter. The deposited second infrared filter covers the first infrared filter. The second infrared filter is lowered to expose the first infrared filter. The lowered second infrared filter is on a second region of the substrate and neighbors the first infrared filter.

Abstract: An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The infrared receiving portion includes an infrared photodiode, at least one white filter, and at least one infrared pass filter. At least one white filter is disposed on the infrared photodiode. At least one infrared pass filter is disposed on the infrared photodiode. The infrared is received by the infrared photodiode after passing through at least one white filter and at least one infrared pass filter.