Abstract: An imaging optical lens assembly includes four lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element and a fourth lens element. Each of the four lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. At least one of all lens surfaces of the four lens elements is aspheric and has at least one inflection point.

Abstract: A micro light-emitting diode display device including a circuit substrate, an epitaxy structure and a conducting layer is provided. The epitaxy structure is electrically connected to the circuit substrate, and includes a connection layer and a plurality of light-emitting mesas. The plurality of light-emitting mesas are disposed on the connection layer, wherein a thickness of the connection layer is less than a thickness of the plurality of light-emitting mesas, and the connection layer has a first surface exposed by the plurality of light-emitting mesas and a second surface opposite to the first surface. The conducting layer is disposed on the second surface of the connection layer and exposes a plurality of sub-areas of the second surface, wherein a vertical projection of the conductive layer onto the connection layer overlaps a vertical projection of the first surface onto the connection layer.

Abstract: A micro LED display device includes an epitaxial structure layer, a connection layer, a light conversion layer and a transparent layer. The epitaxial structure layer includes a plurality of micro LEDs disposed apart from each other. The connection layer is disposed at one side of the epitaxial structure layer away from the micro LEDs. The light conversion layer is fixed on the epitaxial structure layer through the connection layer and includes a plurality of light conversion portions. Each of the light conversion portions corresponds to one of the micro LEDs. The transparent layer is disposed at one side of the light conversion layer away from the epitaxial structure layer. The ratio of the thickness of the transparent layer to the width of each light conversion portion is between 0.1 and 40. A manufacturing method of the micro LED display device is also provided.

Abstract: Quantum dot is a semiconductor nanomaterial. The quantum dot includes a core constituted of InP, a first shell constituted of ZnSe, a second shell constituted of ZnS, and a gradient alloy intermediate layer. The core is wrapped by the first shell. The first shell is wrapped by the second shell, and the first and second shells have different materials. The gradient alloy intermediate layer is between the core and the first shell. The gradient layer includes an alloy constituted of In, P, Zn and Se. A content of the In and P gradually decreases from the core to the first shell. A content of the Zn and Se gradually increases from the core to the first shell. A particle size of the quantum dot is greater than or equal to 11 nm. The quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.

Abstract: Quantum dot is a semiconductor nanomaterial. The quantum dot includes a core constituted of InP, a first shell constituted of ZnSe, a second shell constituted of ZnS, and a gradient alloy intermediate layer. The core is wrapped by the first shell. The first shell is wrapped by the second shell, and the first and second shells have different materials. The gradient alloy intermediate layer is between the core and the first shell. The gradient layer includes an alloy constituted of In, P, Zn and Se. A content of the In and P gradually decreases from the core to the first shell. A content of the Zn and Se gradually increases from the core to the first shell. A particle size of the quantum dot is greater than or equal to 11 nm. The quantum dot is capable of emitting light upon excitation with a photoluminescence quantum yield equal to or more than 50%.

Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.

Abstract: A perovskite luminescent nanocrystal has a chemical formula represented by: Cs4BX6, wherein B includes one or more selected from the group consisting of Ge, Pb, Sn, Sb, Bi, Cu, and Mn, and X includes one or more selected from the group consisting of Cl, Br, and I, wherein the Cs4BX6 perovskite luminescent nanocrystal has a pure phase, and a molar ratio of Cs to B (Cs/B) in the Cs4BX6 perovskite luminescent nanocrystal is greater than 1 and less than 4.