Abstract: Provided is a quantum dot (QD) light modulator and an apparatus including the QD light modulator. The QD light modulator may include a QD-containing layer including QDs having light-emission characteristics, a refractive index change layer arranged adjacent to the QD-containing layer, and a reflector arranged facing the QD-containing layer. The refractive index change layer may include a carrier density change area in which a carrier density changes, and the carrier density change area may be arranged adjacent to the QD-containing layer. The light-emission characteristics of the QD-containing layer may be modulated according to a change in a property of the refractive index change layer. The QD light modulator may further include a nano-antenna structure arranged on the QD-containing layer.

Abstract: Provided are light emission devices including an output coupler and optical apparatuses having the same. The light emission device may include a QD layer containing quantum dots and a nano-antenna structure including an output coupler configured to control an output characteristic of light emitted from the QD layer. The output coupler may be configured to output an emission wavelength of the QD layer. The nano-antenna structure may include one of a metallic antenna, a dielectric antenna, and a slit-containing structure, or may have a multi-patch antenna structure or a fishbone antenna structure.

Abstract: An optical modulating device may include a plurality of quantum dot (QD)-containing layers having QDs and a plurality of refractive index change layers. The QD-containing layers may be disposed between the refractive index change layers, respectively. The optical modulating device may be configured to modulate light-emission characteristics of the plurality of QD-containing layers. At least two of the QD-containing layers may have different central emission wavelengths. At least two of the plurality of refractive index change layers may include different materials or have different carrier densities.

Abstract: An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

Abstract: Provided are light emission devices including an output coupler and optical apparatuses having the same. The light emission device may include a QD layer containing quantum dots and a nano-antenna structure including an output coupler configured to control an output characteristic of light emitted from the QD layer. The output coupler may be configured to output an emission wavelength of the QD layer. The nano-antenna structure may include one of a metallic antenna, a dielectric antenna, and a slit-containing structure, or may have a multi-patch antenna structure or a fishbone antenna structure.

Abstract: An optical modulating device may include a plurality of quantum dot (QD)-containing layers having QDs and a plurality of refractive index change layers. The QD-containing layers may be disposed between the refractive index change layers, respectively. The optical modulating device may be configured to modulate light-emission characteristics of the plurality of QD-containing layers. At least two of the QD-containing layers may have different central emission wavelengths. At least two of the plurality of refractive index change layers may include different materials or have different carrier densities.

Abstract: Provided is a quantum dot (QD) light modulator and an apparatus including the QD light modulator. The QD light modulator may include a QD-containing layer including QDs having light-emission characteristics, a refractive index change layer arranged adjacent to the QD-containing layer, and a reflector arranged facing the QD-containing layer. The refractive index change layer may include a carrier density change area in which a carrier density changes, and the carrier density change area may be arranged adjacent to the QD-containing layer. The light-emission characteristics of the QD-containing layer may be modulated according to a change in a property of the refractive index change layer. The QD light modulator may further include a nano-antenna structure arranged on the QD-containing layer.

Abstract: An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

Abstract: An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

Abstract: An optical modulating device includes a permittivity change layer having a variable permittivity, a dielectric layer disposed on the permittivity change layer, a nanoantenna disposed on the dielectric layer, and a light-emitting structure disposed adjacent to the permittivity change layer.

Abstract: This invention relates light-emitting diode displays with simple structure and fabricating method as well as excellent efficiency. In an embodiment, the display features a nanorod LED array arranged on a substrate and divided into a first, second, and third sub-pixels. Two electrodes are preferably arranged in a vertical configuration for driving the sub-pixels. In another embodiment, a method features the sub-pixels for emitting multi-primary colors being formed on a conductive substrate and thus simplifies the steps.

Abstract: This invention relates to structures and fabricating methods of light-emitting diodes capable of emitting white or a color within full-visible-spectrum with better efficiency and flexibility. An embodiment provides a light-emitting diode array consisted of one or more light-emitting diodes on a substrate. Each light-emitting diode comprises a first doped nanorod, an active light-emitting region consisted of one or more nanodisks on the first doped nanorod, and a second doped nanorod on the active light-emitting region. Another embodiment provides a fabricating method of the light-emitting diode array.

Abstract: This invention relates light-emitting diode displays with silmple structure and fabricating method as well as excellent efficiency. In an embodiment, the display features a nanorod LED array arranged on a substrate and divided into a first, second, and third sub-pixels. Two electrodes are preferably arranged in a vertical configuration for driving the sub-pixels. In another embodiment, a method features the sub-pixels for emitting multi-primary colors being formed on a conductive substrate and thus simplifies the steps.

Abstract: Embodiments of the present invention provides III-nitride light-emitting diodes, which primarily include a first electrode, a n-type gallium nitride (GaN) nanorod array consisted of one or more n-type GaN nanorods ohmic contacting with the first electrode, one or more indium gallium nitride (InGaN) nanodisks disposed on each of the n-type GaN nanorods, a p-type GaN nanorod array consisted of one or more p-type GaN nanorods, where one p-type GaN nanorod is disposed on top of the one ore more InGaN nanodisks disposed on each of the n-type GaN nanorods, and a second electrode ohmic contacts with the p-type GaN nanorod array.

Abstract: This invention relates to structures and fabricating methods of light-emitting diodes capable of emitting white or a color within full-visible-spectrum with better efficiency and flexibility. An embodiment provides a light-emitting diode array consisted of one or more light-emitting diodes on a substrate. Each light-emitting diode comprises a first doped nanorod, an active light-emitting region consisted of one or more nanodisks on the first doped nanorod, and a second doped nanorod on the active light-emitting region. Another embodiment provides a fabricating method of the light-emitting diode array.

Abstract: Embodiments of the present invention provides III-nitride light-emitting diodes, which primarily include a first electrode, a n-type gallium nitride (GaN) nanorod array consisted of one or more n-type GaN nanorods ohmic contacting with the first electrode, one or more indium gallium nitride (InGaN) nanodisks disposed on each of the n-type GaN nanorods, a p-type GaN nanorod array consisted of one or more p-type GaN nanorods, where one p-type GaN nanorod is disposed on top of the one ore more InGaN nanodisks disposed on each of the n-type GaN nanorods, and a second electrode ohmic contacts with the p-type GaN nanorod array.

Abstract: A pair of pliers for connecting a telephone line connector. The pliers have a compression connecting block connected with a limiting pin inserted in a limiting hole preferably of a triangular shape on one handle of the pliers. The upper edge of the limiting hole has an abutting edge bevel relative to a push guiding edge of the limiting hole. When the abutting edge contacts and presses the limiting pin, the contact point therebetween is located next to the center of the limiting pin towards the direction of an action force such that the component force of a resisting force from the center of the limiting pin towards the contact point is at the same side as that of the action force. Thus, the horizontal component force of the action force can be reduced; and the abrasion that the horizontal force component may cause on the guiding groove can be reduced.

Abstract: A pair of pliers for compression connecting a connector for a telephone line, the pliers have a compression connecting block connected with a limiting pin inserted in a limiting hole generally of a triangular shape on one handle of the pliers, the upper edge of the limiting hole is an abutting edge bevel relative to a push guiding edge of the limiting hole, when the abutting edge contacts and presses the limiting pin, the contact point between them is located beside the center of the limiting pin toward the direction where an action force directs to. So that the component force of a resisting force from the center of the limiting pin toward the contact point is at the same side as that of the action force. Thereby, the horizontal component force of the action force can be reduced; the abrasion that the horizontal force component may make on the guiding groove can be lowered.

Abstract: A plastic handle structure of a clamp tool, wherein, a hard plastic layer is provided on the two lateral edge areas of the bottom plate thereof with two lateral edge portions for a fitting-over portion, and the opening of the fitting-over portion per se is provided with two lateral edge portions, the top of the hard plastic layer is cut to open. A transversely directed die block for shaping the fitting-over portion fills soft plastic material in the lateral edge portions for the fitting-over portion, the lateral edge portions of the fitting-over opening and the top cut portion during a soft plastic layer enveloping process, enveloping and filling processes of the soft plastic layer are thus completed, and the structure of the fitting-over portion can be shaped. In the entire operation for the plastic handle, the hard plastic layer can be molded from an upper and a lower die in order to reduce the waiting time to do the enveloping process of the soft plastic layer.