Patents by Inventor Yu Jye Foo

Yu Jye Foo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8026512
    Abstract: An electroluminescent (EL) device, including a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure includes: a first higher mobility semiconductor layer having a first mobility; a second higher mobility semiconductor layer having a second mobility; and a lower mobility semiconductor layer formed between the first higher mobility semiconductor layer and the higher mobility second semiconductor layer. The lower mobility semiconductor layer has a third mobility that is less than the first mobility and the second mobility. The semiconductor structure includes EL semiconducting material in the first higher mobility semiconductor layer, the second higher mobility semiconductor layer, and/or the lower mobility semiconductor layer. The first electrode is coupled to the first higher mobility semiconductor layer of the semiconductor structure. The second electrode is coupled to the second higher mobility semiconductor layer of the semiconductor structure.
    Type: Grant
    Filed: November 16, 2006
    Date of Patent: September 27, 2011
    Assignees: Panasonic Corporation, Cornell Research Foundation, Inc.
    Inventors: Hon Hang Fong, Kiyotaka Mori, George M. Malliaras, Yu Jye Foo
  • Publication number: 20080116450
    Abstract: An electroluminescent (EL) device, including a semiconductor structure, a first electrode, and a second electrode. The semiconductor structure includes: a first higher mobility semiconductor layer having a first mobility; a second higher mobility semiconductor layer having a second mobility; and a lower mobility semiconductor layer formed between the first higher mobility semiconductor layer and the higher mobility second semiconductor layer. The lower mobility semiconductor layer has a third mobility that is less than the first mobility and the second mobility. The semiconductor structure includes EL semiconducting material in the first higher mobility semiconductor layer, the second higher mobility semiconductor layer, and/or the lower mobility semiconductor layer. The first electrode is coupled to the first higher mobility semiconductor layer of the semiconductor structure. The second electrode is coupled to the second higher mobility semiconductor layer of the semiconductor structure.
    Type: Application
    Filed: November 16, 2006
    Publication date: May 22, 2008
    Inventors: Hon Hang Fong, Kiyotaka Mori, George M. Malliaras, Yu Jye Foo