Abstract: A method for fabricating a semiconductor device includes the steps of: providing a substrate having a high-voltage (HV) region and a low-voltage (LV) region; forming a base on the HV region and fin-shaped structures on the LV region; forming a first insulating around the fin-shaped structures; removing the base, the first insulating layer, and part of the fin-shaped structures to form a first trench in the HV region and a second trench in the LV region; forming a second insulating layer in the first trench and the second trench; and planarizing the second insulating layer to form a first shallow trench isolation (STI) on the HV region and a second STI on the LV region.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A method for fabricating a semiconductor device includes first providing a substrate having a high-voltage (HV) region, a medium-voltage (MV) region, and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first base on the substrate, a first gate dielectric layer on the first base, and a first gate electrode on the first gate dielectric layer. The LV device includes a fin-shaped structure on the substrate, and a second gate electrode on the fin-shaped structure, in which a top surface of the first gate dielectric layer is even with a top surface of the fin-shaped structure.

Abstract: A memory cell structure includes a transistor structure and a capacitor structure, where the capacitor structure includes a hydrogen absorption layer. The hydrogen absorption layer absorbs hydrogen, which prevents or reduces the likelihood of the hydrogen diffusing into an underlying metal-oxide channel of the transistor structure. In this way, the hydrogen absorption layer minimizes and/or reduces the likelihood of hydrogen contamination in the metal-oxide channel, which may enable a low current leakage to be achieved for the memory cell structure and reduces the likelihood of data corruption and/or failure of the memory cell structure, among other examples.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A light-emitting device includes a base, a shell with a through hole, a circuit board, a first covering body and a second covering body. The shell covers on the base along an installing direction to form an accommodating space. The circuit board is disposed in the accommodating space and includes a light-emitting element configured to emit a light beam to the through hole along a light-emitting direction. A separation distance is formed between the light-emitting element and the through hole. The light-emitting direction is perpendicular to the installing direction. The first covering body and the second covering body are respectively located at a first side and a second side of the circuit board. A covering space is formed by the first covering body and the second covering body and has an opening corresponding to the through hole. The light-emitting element is located in the covering space.

Abstract: A holed element is plate-shaped and includes a first curved surface, a second curved surface, two interface surfaces, a main hole, two slots, and two elastic sections. A length of the second curved surface is less than a length of the first curved surface. Each of the two interface surfaces is concave relative to the first curved surface and the second curved surface. The main hole is formed and surrounded by the first curved surface, the second curved surface, and the two interface surfaces. The main hole includes a first hole portion and a second hole portion which respectively correspond to the first curved surface and the second curved surface. The two slots are respectively disposed at two opposite sides of the main hole. Each of the elastic sections is formed between a corresponding one of the two slots and the main hole.

Abstract: A suspension bracket and an installing method thereof are provided. The suspension bracket includes a first bracket, a support pole, a positioning member, and a second bracket. The first bracket has an opening and includes a first connecting structure. The support pole is pierced through the opening and configured to be disposed on a preset location, and one end of the support pole abuts against an outer side of the opening. The positioning member is disposed on the support pole and abuts against another outer side of the opening to retain the first bracket. The first bracket is rotatable relative to the positioning member and the support pole. The second bracket includes a second connecting structure, which can be detachably connected to the first connecting structure of the first bracket to form an accommodating space for containing an article.

Abstract: An electronic device and a coupler of the electronic device are provided. The coupler is adapted to be connected to a power source and a rotatable member. The coupler includes a plate body and a coupler protrusion. A coupler groove is formed on the plate body, and the power source is adapted to be wedged into the coupler groove. The coupler protrusion is disposed on the plate body and adapted to be wedged into the rotatable member.

Abstract: An antenna device and an orientation adjustment mechanism are provided. The orientation adjustment mechanism includes a holder, a rotation carrier assembled to the holder, and a torsion spring. The rotation carrier is counterclockwise rotatable from an initial position by a first predetermined angle or is clockwise rotatable from the initial position by a second predetermined angle. The torsion spring has an elastic portion disposed on the holder and two extending arms that extend from the elastic portion. When the rotation carrier is rotated from the initial position by the first predetermined angle or the second predetermined angle, the rotation carrier presses and moves one of the two extending arms, and another one of the two extending arms abuts against the limiting portion, so that the elastic portion is deformed to store an elastic force that tends to move the rotation carrier toward the initial position.

Abstract: An antenna device and an orientation adjustment mechanism are provided. The orientation adjustment mechanism includes a holder, a rotation carrier assembled to the holder, and a torsion spring. The rotation carrier is counterclockwise rotatable from an initial position by a first predetermined angle or is clockwise rotatable from the initial position by a second predetermined angle. The torsion spring has an elastic portion disposed on the holder and two extending arms that extend from the elastic portion. When the rotation carrier is rotated from the initial position by the first predetermined angle or the second predetermined angle, the rotation carrier presses and moves one of the two extending arms, and another one of the two extending arms abuts against the limiting portion, so that the elastic portion is deformed to store an elastic force that tends to move the rotation carrier toward the initial position.

Abstract: A method of sobering up, comprising administering composition comprising an effective amount of Bacillus coagulans TCI711. The Bacillus coagulans TCI711 is deposited in Consortium Food Industry Research and Development Institute (Deposit number: BCRC910807) and German Microbial and Cell Culture Collection Center (DSMZ-DEUTSCHE SAMMLUNG VON MIKROORGANISMEN UND ZELLKULTUREN GmbH) (Deposit number: DSM33163).

Abstract: A use of Bacillus coagulans TCI711 in preparing compositions for sobering up is provided. The Bacillus coagulans TCI711 is deposited in Consortium Food Industry Research and Development Institute (Deposit number: BCRC910807) and German Microbial and Cell Culture Collection Center (DSMZ-DEUTSCHE SAMMLUNG VON MIKROORGANISMEN UND ZELLKULTUREN GmbH) (Deposit number: DSM33163).